JPS5771178A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5771178A
JPS5771178A JP55147994A JP14799480A JPS5771178A JP S5771178 A JPS5771178 A JP S5771178A JP 55147994 A JP55147994 A JP 55147994A JP 14799480 A JP14799480 A JP 14799480A JP S5771178 A JPS5771178 A JP S5771178A
Authority
JP
Japan
Prior art keywords
type
anode
cathode
thyristor
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55147994A
Other languages
Japanese (ja)
Other versions
JPS6122870B2 (en
Inventor
Tomonobu Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55147994A priority Critical patent/JPS5771178A/en
Publication of JPS5771178A publication Critical patent/JPS5771178A/en
Publication of JPS6122870B2 publication Critical patent/JPS6122870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a triac switch having a zero volt switching function for itself by a method wherein two lateral PNPN thyristors are connected in anti-parallel by using electrode metals and the action of P-channel MOSFET is created by the anode of one thyristor and the cathode of the other thyristor, and the electrode metals. CONSTITUTION:A P type anode 1-1, N type gate 1-2, P type cathode 1-3, N type base layer 1-4, P type emitter layer 1-5, and N type emitter layer 1-6 are formed on an N type semiconductor substrate and one lateral thyristor 1 is composed. Next, a P type anode 2-1, N type gate 2-2, P type cathode 2-3, N type base layer 2-4, P type emitter layers 2-5, and N type emitter layers 2-6 are formed on the same substrate and the other lateral thyristor 2 is composed. Then, the P type anode 1-1 and P type cathode 2-3, and the P type cathode 1-3 and P type anode 2-1 are connected by Al electrode metals 10 respectively and thyristors 1 and 2 are composed of anti-parallel connection.
JP55147994A 1980-10-22 1980-10-22 Semiconductor device Granted JPS5771178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147994A JPS5771178A (en) 1980-10-22 1980-10-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147994A JPS5771178A (en) 1980-10-22 1980-10-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5771178A true JPS5771178A (en) 1982-05-01
JPS6122870B2 JPS6122870B2 (en) 1986-06-03

Family

ID=15442742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147994A Granted JPS5771178A (en) 1980-10-22 1980-10-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5771178A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2712428A1 (en) * 1993-11-10 1995-05-19 Sgs Thomson Microelectronics Two-way switch with voltage control.
US5446295A (en) * 1993-08-23 1995-08-29 Siemens Components, Inc. Silicon controlled rectifier with a variable base-shunt resistant

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6364866U (en) * 1986-10-16 1988-04-28

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446295A (en) * 1993-08-23 1995-08-29 Siemens Components, Inc. Silicon controlled rectifier with a variable base-shunt resistant
US5506152A (en) * 1993-08-23 1996-04-09 Siemens Components, Inc. Method of making silicon controlled rectifier with a variable base-shunt resistance
FR2712428A1 (en) * 1993-11-10 1995-05-19 Sgs Thomson Microelectronics Two-way switch with voltage control.
US5608235A (en) * 1993-11-10 1997-03-04 Sgs-Thomson Microelectronics S.A. Voltage-controlled bidirectional switch
EP0652598A3 (en) * 1993-11-10 1999-05-19 STMicroelectronics S.A. Voltage controlled bidirectional switch

Also Published As

Publication number Publication date
JPS6122870B2 (en) 1986-06-03

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