JPS5771180A - Input protective circuit device - Google Patents
Input protective circuit deviceInfo
- Publication number
- JPS5771180A JPS5771180A JP55146955A JP14695580A JPS5771180A JP S5771180 A JPS5771180 A JP S5771180A JP 55146955 A JP55146955 A JP 55146955A JP 14695580 A JP14695580 A JP 14695580A JP S5771180 A JPS5771180 A JP S5771180A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- type
- substrate
- region
- protective circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
Landscapes
- Amplifiers (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
Abstract
PURPOSE:To ensure operation even when high integration is contrived by a method wherein an input protective circuit for C-MOS is composed by utilizing an element with a low voltage. CONSTITUTION:A pair of P type well regions 2 and 2' are penetrated in an N type Si substrate 1 in the depth direction and formed by splitting in the right and left directions through a vacant section having sufficiently narrow width, and an N<+> type region 3 is formed by diffusion at the circumference of opposing well regions 2 and 2', extending over the vacant section 6. Next, thick SiO2 films 5 are deposited on the whole surface, the end sections on the regions 3, 2 and 2' are removed, and P<+> type regions 4 and 4' are formed by diffusion in the exposed regions 2 and 2' respectively. In this way composition, input is connected to the region 3 through a resistor and the regions 2 and 2' are connected to a low electrical potential through the regions 4 and 4' and the substrate 1 is connected to a high electrical potential. In this way, a J-FET is produced by composing junction-type diodes between the regions 3 and 2, and 3 and 2', the region 2 as a drain the substrate 1 as a source and regions 2 and 2' as gates and these are connected in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55146955A JPS5771180A (en) | 1980-10-22 | 1980-10-22 | Input protective circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55146955A JPS5771180A (en) | 1980-10-22 | 1980-10-22 | Input protective circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5771180A true JPS5771180A (en) | 1982-05-01 |
Family
ID=15419350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55146955A Pending JPS5771180A (en) | 1980-10-22 | 1980-10-22 | Input protective circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5771180A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61162143U (en) * | 1985-03-29 | 1986-10-07 | ||
| US5027181A (en) * | 1989-06-08 | 1991-06-25 | Siemens Aktiengesellschaft | Circuit configuration for protecting an electronic circuit against overload |
-
1980
- 1980-10-22 JP JP55146955A patent/JPS5771180A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61162143U (en) * | 1985-03-29 | 1986-10-07 | ||
| US5027181A (en) * | 1989-06-08 | 1991-06-25 | Siemens Aktiengesellschaft | Circuit configuration for protecting an electronic circuit against overload |
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