JPS577142A - Marking method of resin-sealed semiconductor device - Google Patents

Marking method of resin-sealed semiconductor device

Info

Publication number
JPS577142A
JPS577142A JP8015680A JP8015680A JPS577142A JP S577142 A JPS577142 A JP S577142A JP 8015680 A JP8015680 A JP 8015680A JP 8015680 A JP8015680 A JP 8015680A JP S577142 A JPS577142 A JP S577142A
Authority
JP
Japan
Prior art keywords
resin
sealed
over
releasing agent
flame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8015680A
Other languages
English (en)
Other versions
JPS6245833B2 (ja
Inventor
Yuji Miura
Michitoshi Sera
Tetsuo Ito
Atsushi Sonoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8015680A priority Critical patent/JPS577142A/ja
Publication of JPS577142A publication Critical patent/JPS577142A/ja
Publication of JPS6245833B2 publication Critical patent/JPS6245833B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/08—Surface shaping of articles, e.g. embossing; Apparatus therefor by flame treatment ; using hot gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing

Landscapes

  • Duplication Or Marking (AREA)
JP8015680A 1980-06-16 1980-06-16 Marking method of resin-sealed semiconductor device Granted JPS577142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8015680A JPS577142A (en) 1980-06-16 1980-06-16 Marking method of resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8015680A JPS577142A (en) 1980-06-16 1980-06-16 Marking method of resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPS577142A true JPS577142A (en) 1982-01-14
JPS6245833B2 JPS6245833B2 (ja) 1987-09-29

Family

ID=13710431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8015680A Granted JPS577142A (en) 1980-06-16 1980-06-16 Marking method of resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPS577142A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6178142A (ja) * 1984-09-25 1986-04-21 Sanyo Electric Co Ltd モ−ルド型半導体装置の印刷方法
US4931853A (en) * 1986-05-20 1990-06-05 Kabushiki Kaisha Toshiba IC card and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54140463A (en) * 1978-04-21 1979-10-31 Nec Corp Process method for resin-sealed semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54140463A (en) * 1978-04-21 1979-10-31 Nec Corp Process method for resin-sealed semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6178142A (ja) * 1984-09-25 1986-04-21 Sanyo Electric Co Ltd モ−ルド型半導体装置の印刷方法
US4931853A (en) * 1986-05-20 1990-06-05 Kabushiki Kaisha Toshiba IC card and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6245833B2 (ja) 1987-09-29

Similar Documents

Publication Publication Date Title
ES457596A1 (es) Aparato para la formacion de recubrimientos metalicos o de compuesto metalico sobre una cara de un sustrato de vidrio.
SE0200918L (sv) Sätt att utbilda ett kromrikt skikt på ytan av en nickellegering
GB2153259B (en) Coating process
AU7886287A (en) Aqueous coating composition and a process of coating a substrate with such coating composition
KR920002817A (ko) 가스 침탄 방법 및 그의 장치
JPS53144265A (en) Etching device
ATE123073T1 (de) Verfahren und vorrichtung zum aufheizen von geschmolzenem metall.
DE69213774D1 (de) Verfahren zum Emaillieren eines Glassubstrats und Zusammensetzung des verwendeten Emails
JPS5242506A (en) Hydrotreating process of petroleum wax
AU8259487A (en) Preparation of substituted aromatic amines
JPS57109344A (en) Manufacture and its apparatus for semiconductor device
JPS51128833A (en) Aeration method
JPS5423472A (en) Manufacture for semiconductor device
JPS5622041A (en) Metal vapor discharge lamp
JPS5229634A (en) Heating furnace used for controlling generation amount of nitrogen oxi de
JPS5785221A (en) Manufacture of amorphous semiconductor thin film
JPS5666374A (en) Soldering method
JPS5252184A (en) Apparatus for producing single crystal
JPS6245833B2 (ja)
JPS5397915A (en) Steel making method in electric furnace
JPS54140463A (en) Process method for resin-sealed semiconductor device
JPS5456976A (en) Treatment of gases containing nitrogen oxideds
JPS6469017A (en) Formation of oxynitride film
JPS53142994A (en) Heat resistant sheet material
JPS5293184A (en) Manufacturing method for fluorescent lamp