JPS5771576A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5771576A
JPS5771576A JP55147385A JP14738580A JPS5771576A JP S5771576 A JPS5771576 A JP S5771576A JP 55147385 A JP55147385 A JP 55147385A JP 14738580 A JP14738580 A JP 14738580A JP S5771576 A JPS5771576 A JP S5771576A
Authority
JP
Japan
Prior art keywords
selective
cell
sink current
write
executed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55147385A
Other languages
Japanese (ja)
Other versions
JPS6142347B2 (en
Inventor
Kazuhiro Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55147385A priority Critical patent/JPS5771576A/en
Publication of JPS5771576A publication Critical patent/JPS5771576A/en
Publication of JPS6142347B2 publication Critical patent/JPS6142347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuitsĀ 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To stop a sink current supply from a memory cell connected to a selective word line, by controlling a clamp level of a pair of selective and non-selective column lines, when writing to the memory cell of matrix array. CONSTITUTION:In case a word line W1, a column line B1, an anti-B1, etc. are selected and write to a memory cell Q11, etc. is executed, a write a data DA forms high and low level data D and an anti-D and an anti-D to the data DA being in a low level, etc. by a stopping circuit BPC, and controls transistors T11, T21. As a result, each on and off side of the cell Q11 selectd through a line B1 and an anti-B1 is clamped to a high level and a low level, respectively, a sink current from the off- side of the cell Q11 is executed as proxy by the transistor T21, the sink is stopped, and write is executed swiftly. On the other hand, a non-selective column line B2 and an anti-B2 are clamped to a high level through a stopping circuit CLC in the same way, a sink current is supplied from transistors T32, T42, and a cell Q12 supplies no sink current.
JP55147385A 1980-10-21 1980-10-21 Semiconductor memory device Granted JPS5771576A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147385A JPS5771576A (en) 1980-10-21 1980-10-21 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147385A JPS5771576A (en) 1980-10-21 1980-10-21 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5771576A true JPS5771576A (en) 1982-05-04
JPS6142347B2 JPS6142347B2 (en) 1986-09-20

Family

ID=15429053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147385A Granted JPS5771576A (en) 1980-10-21 1980-10-21 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5771576A (en)

Also Published As

Publication number Publication date
JPS6142347B2 (en) 1986-09-20

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