JPS5771581A - Active boosting circuit - Google Patents

Active boosting circuit

Info

Publication number
JPS5771581A
JPS5771581A JP55147926A JP14792680A JPS5771581A JP S5771581 A JPS5771581 A JP S5771581A JP 55147926 A JP55147926 A JP 55147926A JP 14792680 A JP14792680 A JP 14792680A JP S5771581 A JPS5771581 A JP S5771581A
Authority
JP
Japan
Prior art keywords
becomes
state
threshold voltage
potential
trq14
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55147926A
Other languages
Japanese (ja)
Other versions
JPS6212598B2 (en
Inventor
Isao Ogura
Kazunori Ouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55147926A priority Critical patent/JPS5771581A/en
Publication of JPS5771581A publication Critical patent/JPS5771581A/en
Publication of JPS6212598B2 publication Critical patent/JPS6212598B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dc-Dc Converters (AREA)

Abstract

PURPOSE:To execute an effective boosting operation, by constituting an active boosting circuit which is used for a dynamic RAM, of MOS transistors having each different threshold voltage. CONSTITUTION:For instance, when digit lines B, A have beome ''0'' and ''1'' levels by a sense operation, a transistor TRQ17 becomes an on-state, and a node D becomes ''0''V. As a result, a TRQ15 maintains an off-state. Also, a TRQ16 is in a cut-off state since threshold voltage is high, therefore, no charge of a node C is discharged to the line A. Sibsequently, when a boosting clock signal phi becomes ''1'' level, a TRQ 14 becomes an on-state, and the potential of the line A is restored to a level of the electric power supply Vcc. In this case, since threshold voltage of the TRQ14 is made lower than that of an ordinary TR in advance, conductance of the TRQ14 and TRQ15 is made large, therefore, the potential of the lines A, B is boosted to the supply potential exactly and rapidly as much.
JP55147926A 1980-10-22 1980-10-22 Active boosting circuit Granted JPS5771581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147926A JPS5771581A (en) 1980-10-22 1980-10-22 Active boosting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147926A JPS5771581A (en) 1980-10-22 1980-10-22 Active boosting circuit

Publications (2)

Publication Number Publication Date
JPS5771581A true JPS5771581A (en) 1982-05-04
JPS6212598B2 JPS6212598B2 (en) 1987-03-19

Family

ID=15441201

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147926A Granted JPS5771581A (en) 1980-10-22 1980-10-22 Active boosting circuit

Country Status (1)

Country Link
JP (1) JPS5771581A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62165787A (en) * 1986-01-17 1987-07-22 Toshiba Corp Semiconductor memory device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4052229A (en) * 1976-06-25 1977-10-04 Intel Corporation Process for preparing a substrate for mos devices of different thresholds
JPS54129841A (en) * 1978-01-16 1979-10-08 Western Electric Co Sense refresh detector
JPS5548894A (en) * 1978-09-29 1980-04-08 Nec Corp Memory circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4052229A (en) * 1976-06-25 1977-10-04 Intel Corporation Process for preparing a substrate for mos devices of different thresholds
US4052229B1 (en) * 1976-06-25 1985-01-15
JPS54129841A (en) * 1978-01-16 1979-10-08 Western Electric Co Sense refresh detector
JPS5548894A (en) * 1978-09-29 1980-04-08 Nec Corp Memory circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62165787A (en) * 1986-01-17 1987-07-22 Toshiba Corp Semiconductor memory device

Also Published As

Publication number Publication date
JPS6212598B2 (en) 1987-03-19

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