JPS577183A - Fundamental transverse mode semiconductor laser and manufacture therefor - Google Patents

Fundamental transverse mode semiconductor laser and manufacture therefor

Info

Publication number
JPS577183A
JPS577183A JP8118780A JP8118780A JPS577183A JP S577183 A JPS577183 A JP S577183A JP 8118780 A JP8118780 A JP 8118780A JP 8118780 A JP8118780 A JP 8118780A JP S577183 A JPS577183 A JP S577183A
Authority
JP
Japan
Prior art keywords
layer
type
transverse mode
mesa
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8118780A
Other languages
English (en)
Inventor
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8118780A priority Critical patent/JPS577183A/ja
Publication of JPS577183A publication Critical patent/JPS577183A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Semiconductor Lasers (AREA)
JP8118780A 1980-06-16 1980-06-16 Fundamental transverse mode semiconductor laser and manufacture therefor Pending JPS577183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8118780A JPS577183A (en) 1980-06-16 1980-06-16 Fundamental transverse mode semiconductor laser and manufacture therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8118780A JPS577183A (en) 1980-06-16 1980-06-16 Fundamental transverse mode semiconductor laser and manufacture therefor

Publications (1)

Publication Number Publication Date
JPS577183A true JPS577183A (en) 1982-01-14

Family

ID=13739457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8118780A Pending JPS577183A (en) 1980-06-16 1980-06-16 Fundamental transverse mode semiconductor laser and manufacture therefor

Country Status (1)

Country Link
JP (1) JPS577183A (ja)

Similar Documents

Publication Publication Date Title
US4819245A (en) Semiconductor laser device having substriped channels for forming an active layer which is thin in an inside portion
JPS5710285A (en) Semiconductor laser
JPS58216486A (ja) 半導体レ−ザおよびその製造方法
JPS5743487A (en) Semiconductor laser
US4686679A (en) Window VSIS semiconductor laser
JPS577183A (en) Fundamental transverse mode semiconductor laser and manufacture therefor
US4941148A (en) Semiconductor laser element with a single longitudinal oscillation mode
JPS57139982A (en) Semiconductor laser element
JPS57211791A (en) Semiconductor laser element
JPS5691490A (en) Semiconductor laser element
JPS57162483A (en) Semiconductor luminous device
JPS5735391A (en) Manufacture of semiconductor laser
JPS56112786A (en) Manufacture of semiconductor laser
JPS5698889A (en) Ingaasp semiconductor laser
JPS6453487A (en) Semiconductor laser device
JPS54138386A (en) Semiconductor laser device of current narrow type
JPS5712587A (en) Hetero-structure semiconductor laser
JPS57211290A (en) Manufacture of semiconductor laser element
JPS571287A (en) Basic lateral mode semiconductor laser and manufacture thereof
JPS56124288A (en) Single transverse mode semiconductor laser
JPS56158496A (en) Manufacture of injection type laser
JPS5712586A (en) Semiconductor laser element
KR820002374B1 (ko) 반도체 레이저소자
JPS5728384A (en) Semiconductor laser
JPS577181A (en) Semiconductor laser