JPS5772235A - Transparent electrode and production thereof - Google Patents

Transparent electrode and production thereof

Info

Publication number
JPS5772235A
JPS5772235A JP55147240A JP14724080A JPS5772235A JP S5772235 A JPS5772235 A JP S5772235A JP 55147240 A JP55147240 A JP 55147240A JP 14724080 A JP14724080 A JP 14724080A JP S5772235 A JPS5772235 A JP S5772235A
Authority
JP
Japan
Prior art keywords
electrode
transparent electrode
torr
jar
bell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55147240A
Other languages
Japanese (ja)
Inventor
Takao Chikamura
Takuo Shibata
Yutaka Miyata
Shinji Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55147240A priority Critical patent/JPS5772235A/en
Publication of JPS5772235A publication Critical patent/JPS5772235A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To make the surface of an electrode flat and to enable the electrode to be used for a liquid crystal mateial or the like which is sensitive to a contact surface state, by forming a region in which, at least, a part is of a high resistance. CONSTITUTION:After a bell-jar 20 is exhausted to 10<-5>-10<-6>Torr or so by exhausting system 20; O2, for instance, is introduced into the bell-jar from a gas feeding source 22 up to the pressure of 10<-3>-Torr or so by regulating a needle valve 23; electric power is supplied from electric source 24; thus, oxygen plasma is formed between electrode 26 and 27. Consequently, the transparent electrode is formed; a sample 28 whose pattern is formed by a resist or the like is exposed to this oxygen plasma and a part of the sample 28 is rendered to change into a high resistance.
JP55147240A 1980-10-20 1980-10-20 Transparent electrode and production thereof Pending JPS5772235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147240A JPS5772235A (en) 1980-10-20 1980-10-20 Transparent electrode and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147240A JPS5772235A (en) 1980-10-20 1980-10-20 Transparent electrode and production thereof

Publications (1)

Publication Number Publication Date
JPS5772235A true JPS5772235A (en) 1982-05-06

Family

ID=15425740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147240A Pending JPS5772235A (en) 1980-10-20 1980-10-20 Transparent electrode and production thereof

Country Status (1)

Country Link
JP (1) JPS5772235A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175338A (en) * 2013-03-06 2014-09-22 Stanley Electric Co Ltd Semiconductor light-emitting element and manufacturing method of the same
JP2021158179A (en) * 2020-03-26 2021-10-07 豊田合成株式会社 Light-emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014175338A (en) * 2013-03-06 2014-09-22 Stanley Electric Co Ltd Semiconductor light-emitting element and manufacturing method of the same
JP2021158179A (en) * 2020-03-26 2021-10-07 豊田合成株式会社 Light-emitting device
US11764329B2 (en) 2020-03-26 2023-09-19 Toyoda Gosei Co., Ltd. Light emitting device

Similar Documents

Publication Publication Date Title
JPS54146690A (en) Gas detecting element
JPS5778519A (en) Production of electrochromic display element
JPS56105483A (en) Dry etching device
JPS57147049A (en) Oxygen sensor element
JPS54104770A (en) Heat treatment method for 3-5 group compound semiconductor
JPS572585A (en) Forming method for aluminum electrode
JPS56169116A (en) Manufacture of amorphous silicon film
JPS5710629A (en) Plasma treatment of hollow body
JPS57141A (en) Method of improving dielectric characteristics of plasma- polymerized styrene membrane by electrical discharge treatment in hydrogen gas
JPS55138714A (en) Manufacture of liquid crystal cell
JPS539082A (en) Gas exhausting device for fluorescent lamp
JPS57186335A (en) Forming method for pattern
JPS57211239A (en) Formation of insulating film
JPS5342477A (en) Process for treating electrode component of bulb
JPS5250290A (en) Process for production of inflammable gas detecting sensor
GB1093815A (en) Method of and apparatus for surface heating a body by chemical reaction
JPS5544921A (en) Oxygen sensor
JPS5669374A (en) Dry etching method
JPS5722549A (en) Gas sensor and manufacture thereof
JPS5353972A (en) Anodic treatment method
JPS55125447A (en) Process of sensor for detecting oxygen concentration
JPS57192030A (en) Manufacture of semiconductor device
JPS5740529A (en) Surface treatment of vinyl chloride resin molded article
JPS6436762A (en) Manufacture of transparent conductive film
JPS5561027A (en) Gas plasma etching