JPS5772387A - Junction type field-effect semiconductor device - Google Patents

Junction type field-effect semiconductor device

Info

Publication number
JPS5772387A
JPS5772387A JP55148311A JP14831180A JPS5772387A JP S5772387 A JPS5772387 A JP S5772387A JP 55148311 A JP55148311 A JP 55148311A JP 14831180 A JP14831180 A JP 14831180A JP S5772387 A JPS5772387 A JP S5772387A
Authority
JP
Japan
Prior art keywords
region
drain region
section
type
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55148311A
Other languages
Japanese (ja)
Other versions
JPH0116028B2 (en
Inventor
Yasunobu Tanizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55148311A priority Critical patent/JPS5772387A/en
Publication of JPS5772387A publication Critical patent/JPS5772387A/en
Publication of JPH0116028B2 publication Critical patent/JPH0116028B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To prevent the formation of an inversion layer on the surface of a drain region by dividing a wiring material layer formed on the surface of an insulating layer of a gate region and electrically floating a section which overlaps on the drain region. CONSTITUTION:A P<+> type source region 2 and the drain region 3 are shaped to an N type semiconductor layer 1, a P type channel region 4 is buried between both regions, and the N type first gate region 5 is formed on the channel region. Here, the wiring material layer 10 is shaped on the surface of a gate oxide film 9 in a two divided form, and the section 10b overlapping on the drain region 3 is used under an electrically floated condition. According to such constitution, there happens no potential difference under the section overlapping on the drain region 3, and the surface of the drain region is not inverted.
JP55148311A 1980-10-24 1980-10-24 Junction type field-effect semiconductor device Granted JPS5772387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148311A JPS5772387A (en) 1980-10-24 1980-10-24 Junction type field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148311A JPS5772387A (en) 1980-10-24 1980-10-24 Junction type field-effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5772387A true JPS5772387A (en) 1982-05-06
JPH0116028B2 JPH0116028B2 (en) 1989-03-22

Family

ID=15449945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148311A Granted JPS5772387A (en) 1980-10-24 1980-10-24 Junction type field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772387A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147371A (en) * 1974-10-21 1976-04-22 Fujitsu Ltd Handotaisochi

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147371A (en) * 1974-10-21 1976-04-22 Fujitsu Ltd Handotaisochi

Also Published As

Publication number Publication date
JPH0116028B2 (en) 1989-03-22

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