JPS5775013A - Amplifying device - Google Patents

Amplifying device

Info

Publication number
JPS5775013A
JPS5775013A JP55150523A JP15052380A JPS5775013A JP S5775013 A JPS5775013 A JP S5775013A JP 55150523 A JP55150523 A JP 55150523A JP 15052380 A JP15052380 A JP 15052380A JP S5775013 A JPS5775013 A JP S5775013A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
gate
output
gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55150523A
Other languages
Japanese (ja)
Inventor
Masahiro Nishiuma
Shutaro Nanbu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55150523A priority Critical patent/JPS5775013A/en
Publication of JPS5775013A publication Critical patent/JPS5775013A/en
Pending legal-status Critical Current

Links

Landscapes

  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE: To obtain a large gain reduction, by connecting the source of a field effect transistor, which has the grounded gate, to the output terminal of a wide band field effect transistor amplifier to change the gate bias.
CONSTITUTION: A wide band amplifier (a) consists of a GaAs field effect transistor 1 and etc., and a large negative feedback quantity is given. The output of the field effect transistor 1 is inputted to the source of a field effect transistor 2, which has the grounded gate by a capacitor C, and is outputted from the drain. The gain of the field effect transistor 2 is changed by a control voltage given to a gate B. Consequently, since isolation between the input and the output is large, a sufficient large gain (40dB) is controlled.
COPYRIGHT: (C)1982,JPO&Japio
JP55150523A 1980-10-27 1980-10-27 Amplifying device Pending JPS5775013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150523A JPS5775013A (en) 1980-10-27 1980-10-27 Amplifying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150523A JPS5775013A (en) 1980-10-27 1980-10-27 Amplifying device

Publications (1)

Publication Number Publication Date
JPS5775013A true JPS5775013A (en) 1982-05-11

Family

ID=15498720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150523A Pending JPS5775013A (en) 1980-10-27 1980-10-27 Amplifying device

Country Status (1)

Country Link
JP (1) JPS5775013A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63146506A (en) * 1986-12-09 1988-06-18 Nec Corp Field effect transistor
JPH01117368A (en) * 1987-10-30 1989-05-10 Nec Corp Sechottky gate field effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177439A (en) * 1961-12-06 1965-04-06 Philips Corp Transistor amplifier devices with controllable amplification
JPS4890653A (en) * 1972-03-06 1973-11-26

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177439A (en) * 1961-12-06 1965-04-06 Philips Corp Transistor amplifier devices with controllable amplification
JPS4890653A (en) * 1972-03-06 1973-11-26

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63146506A (en) * 1986-12-09 1988-06-18 Nec Corp Field effect transistor
JPH01117368A (en) * 1987-10-30 1989-05-10 Nec Corp Sechottky gate field effect transistor

Similar Documents

Publication Publication Date Title
GB1019088A (en) Turbine control system
JPS5775022A (en) Comparator
JPS52153364A (en) Microwave amplifier
MY110755A (en) Amplifier stage having an output voltage that is db linear.
EP0084376A3 (en) Knock control system
SE7900848L (en) DISTORTION REDUCING FEEDBACK SYSTEM
JPS5564412A (en) Frequency characteristic regulator
JPS5728411A (en) Voltage controlled type variable gain circuit
JPS5360546A (en) Amplifier
JPS57107621A (en) Amplifying circuit
JPS5514774A (en) Output limit amplifier circuit
JPS57141107A (en) Wide-band negative feedback amplifying circuit
JPS5534540A (en) Microwave amplifier
JPS53133321A (en) Gamma circuit
JPS56128004A (en) Muting circuit
JPS57164602A (en) Amplifier
GB1188049A (en) Amplifier Circuit
JPS5317249A (en) Gain variable amplifier
JPS5585115A (en) Gain control and amplifying circuit
JPS5757010A (en) Amplifier
JPS5781711A (en) Amplifier
JPS5374823A (en) Amplifier
JPS5377126A (en) High frequency amplfying circuit
JPS5275251A (en) Differential amplifier circuit
JPS5690607A (en) Wide-band amplifier of light signal observation device