JPS5776869A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5776869A
JPS5776869A JP55153110A JP15311080A JPS5776869A JP S5776869 A JPS5776869 A JP S5776869A JP 55153110 A JP55153110 A JP 55153110A JP 15311080 A JP15311080 A JP 15311080A JP S5776869 A JPS5776869 A JP S5776869A
Authority
JP
Japan
Prior art keywords
film
flow
stopping
resin
resin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55153110A
Other languages
Japanese (ja)
Inventor
Takashi Yabu
Yorihiro Uchiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55153110A priority Critical patent/JPS5776869A/en
Publication of JPS5776869A publication Critical patent/JPS5776869A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/682Shapes or dispositions thereof comprising holes having chips therein
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • H10W72/01515Forming coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07551Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To protect the surface of a semiconductor substrate from gamma-rays, etc., and to prevent the disconnection of a wire by forming a flow-stopping beltlike film, which is hydrophobic to resin, inside an electrode pad of the surface of the semiconductor substrate and shaping a resin layer on an internal surface of the flow- stopping film. CONSTITUTION:The flow-stopping beltlike film 13 is formed onto an insulating film 12 such as a PSG film shaped onto the wiring 11, etc. of the surface of the semiconductor substrate 10 so as to surround an electric circuit forming region 14. The flow-stopping film 13 is formed inside the electrode pads 11A molded to the circumference. The flow-stopping film 13 is shaped by a material, which is preferably hydrophobic to resin 7 and is difficult to be moistened, such as polycrystal silicon. The resin such as polyimide is dropped, and the resin layer 7 is formed. Accordingly, even the wire 3 section is not coated with the resin layer, and the disconnection of the wire due to the shrinkage of the resin layer 7 can be prevented.
JP55153110A 1980-10-31 1980-10-31 Semiconductor device Pending JPS5776869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55153110A JPS5776869A (en) 1980-10-31 1980-10-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55153110A JPS5776869A (en) 1980-10-31 1980-10-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5776869A true JPS5776869A (en) 1982-05-14

Family

ID=15555185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55153110A Pending JPS5776869A (en) 1980-10-31 1980-10-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5776869A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02271547A (en) * 1989-04-12 1990-11-06 Nec Corp Film carrier-type semiconductor device
JPH0319259A (en) * 1989-06-15 1991-01-28 Nec Corp Semiconductor device
US5045918A (en) * 1986-12-19 1991-09-03 North American Philips Corp. Semiconductor device with reduced packaging stress
US5171716A (en) * 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045918A (en) * 1986-12-19 1991-09-03 North American Philips Corp. Semiconductor device with reduced packaging stress
US5171716A (en) * 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress
JPH02271547A (en) * 1989-04-12 1990-11-06 Nec Corp Film carrier-type semiconductor device
JPH0319259A (en) * 1989-06-15 1991-01-28 Nec Corp Semiconductor device

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