JPS577942A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS577942A
JPS577942A JP8320280A JP8320280A JPS577942A JP S577942 A JPS577942 A JP S577942A JP 8320280 A JP8320280 A JP 8320280A JP 8320280 A JP8320280 A JP 8320280A JP S577942 A JPS577942 A JP S577942A
Authority
JP
Japan
Prior art keywords
film
silicon nitride
patterns
nitride film
kinds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8320280A
Other languages
Japanese (ja)
Inventor
Fujiki Tokuyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8320280A priority Critical patent/JPS577942A/en
Publication of JPS577942A publication Critical patent/JPS577942A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0128—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising multiple local oxidation process steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To manufacture the impurity regions of three kinds by a method wherein the similar patterns of three kinds are formed by a silicon nitride film, an insulator film, etching speed thereof differs from the film, and a photo-resist, and the patterns and the heat-resisting oxidizing property of the silicon nitride film are utilized. CONSTITUTION:A silicon oxide film 2 is made up on the surface of an N type semiconductor substrate 1 in approximately 300Angstrom , and the silicon nitride film 3 according to thermal gaseous phase growth in approximately 1,200Angstrom and the sulicon nitride film 4 according to a plasma gaseous phase growth method in approximately 2,000Angstrom are laminated on the film 2. Photo-resist patterns 5 are built up, and the silicon nitride films 3, 4 are etched simultaneously using the patterns 5 as masks, thus forming the similar patterns of three kinds. Each semiconductor region is made up by successively repeating ion injection and thermal oxidation, using the patterns of three kinds as masks. An insulator, an etching characteristic thereof differs from the silicon nitride film 3, such as a polycrystal silicon film may be substituted for the silicon nitride film 4.
JP8320280A 1980-06-19 1980-06-19 Manufacture of semiconductor device Pending JPS577942A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8320280A JPS577942A (en) 1980-06-19 1980-06-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8320280A JPS577942A (en) 1980-06-19 1980-06-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS577942A true JPS577942A (en) 1982-01-16

Family

ID=13795733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8320280A Pending JPS577942A (en) 1980-06-19 1980-06-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS577942A (en)

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