JPS5779620A - Plasma etching process - Google Patents

Plasma etching process

Info

Publication number
JPS5779620A
JPS5779620A JP55156083A JP15608380A JPS5779620A JP S5779620 A JPS5779620 A JP S5779620A JP 55156083 A JP55156083 A JP 55156083A JP 15608380 A JP15608380 A JP 15608380A JP S5779620 A JPS5779620 A JP S5779620A
Authority
JP
Japan
Prior art keywords
etching
electrode
sample
etching process
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55156083A
Other languages
Japanese (ja)
Inventor
Masahiro Yoneda
Shiro Hine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55156083A priority Critical patent/JPS5779620A/en
Publication of JPS5779620A publication Critical patent/JPS5779620A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent an electrode form being etched in an etching process, by a method wherein, in case a sample is plasma-etched, a CF gas is fed before the etching process, a high-frequency electric filed is applied to cover an electric surface with fluoric resin film. CONSTITUTION:Before an etching sample is set in an etching chamber 1, the inside of the chamber 1 is decompressed to feed a CF gas, such as C4F8, C5F10. With this, a high-frequency electric field is applied between an upper electrode 44 and a lower electrode 45 to form a fluoric resin film 9 on the electrode surface through the plasma polymerization. The etching sample 8 is then set in the chamber 1 to feed an etching gas through a gas feeding nozzle 2 after decompression. Simultaneously, high-frequency electric field is applied between the upper electrode 44 and the electrode 45 to perform a plasma-etching of the sample 8. This permits the sample 8 to be prevented from being contaminated by an electrode material during an etching process.
JP55156083A 1980-11-05 1980-11-05 Plasma etching process Pending JPS5779620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156083A JPS5779620A (en) 1980-11-05 1980-11-05 Plasma etching process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156083A JPS5779620A (en) 1980-11-05 1980-11-05 Plasma etching process

Publications (1)

Publication Number Publication Date
JPS5779620A true JPS5779620A (en) 1982-05-18

Family

ID=15619920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156083A Pending JPS5779620A (en) 1980-11-05 1980-11-05 Plasma etching process

Country Status (1)

Country Link
JP (1) JPS5779620A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998049720A1 (en) * 1997-04-28 1998-11-05 Shibaura Mechatronics Corporation Vacuum processing method and apparatus
US6564810B1 (en) * 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
JP2008519431A (en) * 2004-10-29 2008-06-05 ラム リサーチ コーポレーション Method for protecting silicon or silicon carbide electrode surface from morphology modification during plasma etching process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329672A (en) * 1976-08-31 1978-03-20 Toshiba Corp Gas etching apparatus
JPS5582782A (en) * 1978-12-18 1980-06-21 Fujitsu Ltd Dry etching method
JPS5667925A (en) * 1979-11-05 1981-06-08 Nippon Telegr & Teleph Corp <Ntt> Plasma etching method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329672A (en) * 1976-08-31 1978-03-20 Toshiba Corp Gas etching apparatus
JPS5582782A (en) * 1978-12-18 1980-06-21 Fujitsu Ltd Dry etching method
JPS5667925A (en) * 1979-11-05 1981-06-08 Nippon Telegr & Teleph Corp <Ntt> Plasma etching method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998049720A1 (en) * 1997-04-28 1998-11-05 Shibaura Mechatronics Corporation Vacuum processing method and apparatus
EP0980092A4 (en) * 1997-04-28 2000-03-29 Shibaura Mechatronics Corp PROCESS AND DEVICE FOR VACUUM PROCESSING
US6465363B1 (en) 1997-04-28 2002-10-15 Shibaura Mechatronics Corporation Vacuum processing method and vacuum processing apparatus
US6564810B1 (en) * 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
US6708700B2 (en) 2000-03-28 2004-03-23 Asm America Cleaning of semiconductor processing chambers
JP2008519431A (en) * 2004-10-29 2008-06-05 ラム リサーチ コーポレーション Method for protecting silicon or silicon carbide electrode surface from morphology modification during plasma etching process
JP2013042149A (en) * 2004-10-29 2013-02-28 Lam Research Corporation Method for protecting silicon or silicon carbide electrode surface from morphological modification during plasma etch processing

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