JPS5779624A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5779624A JPS5779624A JP55154615A JP15461580A JPS5779624A JP S5779624 A JPS5779624 A JP S5779624A JP 55154615 A JP55154615 A JP 55154615A JP 15461580 A JP15461580 A JP 15461580A JP S5779624 A JPS5779624 A JP S5779624A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- thickness
- dielectric thin
- semiconductor substrate
- annealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Abstract
PURPOSE:To make thickness of a mask material thin without giving restriction to the succeeding manufacturing process and without obstructing stability of a semiconductor device by a method wherein a semiconductor substrate is annealed selectively with the laser beam making a dielectric thin film on the semiconductor substrate having two kinds of thickness as a mask. CONSTITUTION:The semiconductor substrate 21 is formed with Si, the dielectric thin films 22, 23 of SiO2 are formed thereon, thickness of the dielectric thin films 22, 23 and the sum of thickness thereof are formed respectively as to come to the neighborhood of the maximum, the neighborhood of the minimum of transmittivity, and intensity of the laser beam 24 is decided by setting transmiting energy being necessitated for annealing of Si as to come between the maximum and the minimum of transmittivity. Accordingly the ground region 25 of the dielectric thin film 23 is annealed, the other region of the semiconductor substrate 21 is not annealed, and selective annealing can be attained. The property of the laser beam wherei multiple reflection phenomenon of the laser beam is dependent upon wave length of the laser beam and is dependent upon thickness of the dielectric thin film is utilized in this manner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55154615A JPS5779624A (en) | 1980-11-05 | 1980-11-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55154615A JPS5779624A (en) | 1980-11-05 | 1980-11-05 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5779624A true JPS5779624A (en) | 1982-05-18 |
Family
ID=15588050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55154615A Pending JPS5779624A (en) | 1980-11-05 | 1980-11-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5779624A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6014443A (en) * | 1983-07-04 | 1985-01-25 | Nec Corp | Annealing method of semiconductor wafer |
| JPS61251113A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Single crystallization of non-single crystal layer |
| CN112768354A (en) * | 2020-12-30 | 2021-05-07 | 济南晶正电子科技有限公司 | Annealing method, composite film and electronic element |
-
1980
- 1980-11-05 JP JP55154615A patent/JPS5779624A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6014443A (en) * | 1983-07-04 | 1985-01-25 | Nec Corp | Annealing method of semiconductor wafer |
| JPS61251113A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Single crystallization of non-single crystal layer |
| CN112768354A (en) * | 2020-12-30 | 2021-05-07 | 济南晶正电子科技有限公司 | Annealing method, composite film and electronic element |
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