JPS5779640A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5779640A
JPS5779640A JP55156142A JP15614280A JPS5779640A JP S5779640 A JPS5779640 A JP S5779640A JP 55156142 A JP55156142 A JP 55156142A JP 15614280 A JP15614280 A JP 15614280A JP S5779640 A JPS5779640 A JP S5779640A
Authority
JP
Japan
Prior art keywords
layer
substrate
polycrystalline
film
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55156142A
Other languages
Japanese (ja)
Other versions
JPS628028B2 (en
Inventor
Junichi Matsunaga
Hiroshi Nozawa
Hisahiro Matsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55156142A priority Critical patent/JPS5779640A/en
Publication of JPS5779640A publication Critical patent/JPS5779640A/en
Publication of JPS628028B2 publication Critical patent/JPS628028B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To enable to obtain a semiconductor substrate having few generation of defect improving the element isolation technique by a method wherein a material layer having high oxidation speed provided on the semiconductor substrate interposing an oxide film and an accumulated body of Si3N4 between them is oxidized selectively, and a part of the remaining material layer is removed. CONSTITUTION:After the SiO2 film 2, the Si3N4 film 3 and the polycrystalline Si layer 4 are accumulated in order on the Si substrate 1, selective etching is performed utilizing an Si nitride pattern to form thick silicon oxide films 7, a part of the remained polycrystalline Si layer is removed, and still remaining Si layers 4' are oxidized again. Accordingly controllng of finishing point of oxidation is unnecessitated, and because influence to the substrate is reduced, generation of stress is prevented, and moreover formation of element in minute type can be attained.
JP55156142A 1980-11-06 1980-11-06 Manufacture of semiconductor device Granted JPS5779640A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55156142A JPS5779640A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55156142A JPS5779640A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5779640A true JPS5779640A (en) 1982-05-18
JPS628028B2 JPS628028B2 (en) 1987-02-20

Family

ID=15621235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55156142A Granted JPS5779640A (en) 1980-11-06 1980-11-06 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5779640A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6222452A (en) * 1985-07-22 1987-01-30 Mitsubishi Electric Corp Semiconductor device
US4818235A (en) * 1987-02-10 1989-04-04 Industry Technology Research Institute Isolation structures for integrated circuits
JPH01132140A (en) * 1987-08-19 1989-05-24 Agency Of Ind Science & Technol Formation of pattern

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6222452A (en) * 1985-07-22 1987-01-30 Mitsubishi Electric Corp Semiconductor device
US4818235A (en) * 1987-02-10 1989-04-04 Industry Technology Research Institute Isolation structures for integrated circuits
JPH01132140A (en) * 1987-08-19 1989-05-24 Agency Of Ind Science & Technol Formation of pattern

Also Published As

Publication number Publication date
JPS628028B2 (en) 1987-02-20

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