JPS577983A - Display device - Google Patents

Display device

Info

Publication number
JPS577983A
JPS577983A JP8211680A JP8211680A JPS577983A JP S577983 A JPS577983 A JP S577983A JP 8211680 A JP8211680 A JP 8211680A JP 8211680 A JP8211680 A JP 8211680A JP S577983 A JPS577983 A JP S577983A
Authority
JP
Japan
Prior art keywords
led
electrodes
constituted
fixed
multicolored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8211680A
Other languages
Japanese (ja)
Inventor
Tetsuo Sadamasa
Osamu Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8211680A priority Critical patent/JPS577983A/en
Publication of JPS577983A publication Critical patent/JPS577983A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To increase the efficiency of manufacturing work as well as to cut down cost by a method wherein the cathode electrodes or anode electrodes of a plurality of LED pellets, having different luminescent wavelength, are formed in one body through the intermediary of a ferromagnetic conductive material in such manner that said electrodes are formed electrically conductive to each other. CONSTITUTION:A P type GaP layer 312 is formed on an N type CaP substrate 311 and then a cathode electrode 313 and an anode electrode 314 are formed. The LED wafers 315 and 316 thus formed are fixed on a nickel plate 312 using alloy 322, having a low melting point and a multicolored LED wafer 323 is constituted. Then, the multicolored LED wafer 323 is separated by cutting and a multicolor light emitting LED331, formed in one body, is constituted. Then, LED's 345-347 which are formed in one body are attracted by magnetic heads 341-343, transferred to a substrate 354 and fixed there.
JP8211680A 1980-06-19 1980-06-19 Display device Pending JPS577983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8211680A JPS577983A (en) 1980-06-19 1980-06-19 Display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8211680A JPS577983A (en) 1980-06-19 1980-06-19 Display device

Publications (1)

Publication Number Publication Date
JPS577983A true JPS577983A (en) 1982-01-16

Family

ID=13765433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8211680A Pending JPS577983A (en) 1980-06-19 1980-06-19 Display device

Country Status (1)

Country Link
JP (1) JPS577983A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0229686A (en) * 1988-07-19 1990-01-31 Koito Ind Ltd Information display device
JPH0489735U (en) * 1990-06-29 1992-08-05
US6919581B2 (en) * 2000-08-18 2005-07-19 Sony Corporation Image display unit and production method thereof
CN107425101A (en) * 2017-07-11 2017-12-01 华灿光电（浙江）有限公司 A method for mass transfer of miniature light-emitting diode chips

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0229686A (en) * 1988-07-19 1990-01-31 Koito Ind Ltd Information display device
JPH0489735U (en) * 1990-06-29 1992-08-05
US6919581B2 (en) * 2000-08-18 2005-07-19 Sony Corporation Image display unit and production method thereof
CN107425101A (en) * 2017-07-11 2017-12-01 华灿光电（浙江）有限公司 A method for mass transfer of miniature light-emitting diode chips
CN107425101B (en) * 2017-07-11 2019-03-01 华灿光电（浙江）有限公司 Method for transferring huge amount of micro light-emitting diode chips

Similar Documents

Publication Publication Date Title
MX172033B (en) AN IMPROVED PROCEDURE FOR THE PRODUCTION OF A LOW EMISSION CAPACITY, ON A TRANSPARENT GLASS OR PLASTIC SUBSTRATE, AND THE RESULTING PRODUCT
GB1127070A (en) Electroplated contacts for semiconductor devices
JPS577983A (en) Display device
US3731353A (en) Method of making electroluminescent devices
JPS6421091A (en) Cathode for electrolysis and production thereof
JPS57111076A (en) Semiconductor light-emitting device
JPS5745983A (en) Manufacture of solid state light emitting indicator
JPS5787184A (en) Gan blue light emitting element
JPS5739571A (en) Constant current diode
JPS5258494A (en) Production of enameled type el
JPS4994293A (en)
JPS5660076A (en) Gallium nitride light emitting element and manufacture thereof
JPS5789273A (en) Manufacture of light emitting element
JPS5713762A (en) Light energized semiconductor device
GB815422A (en) Improvements in or relating to solid-state image intensifiers
JPS6431335A (en) Electron beam generator
JPS56103466A (en) Thyristor
JPS5718377A (en) Light emitting element
JPS5788780A (en) Light emitting device
JPS57192088A (en) Manufacture of light emitting diode
JPS546789A (en) Semiconductor light emitting device
JPH0199266A (en) Semiconductor light emitting device
JPS5419384A (en) Production of semiconductor light emitting devices
JPS5712579A (en) Buried type semiconductor laser
JPS5743482A (en) Semiconductor light emitting element