JPS5782285A - Sense amplifying circuit - Google Patents
Sense amplifying circuitInfo
- Publication number
- JPS5782285A JPS5782285A JP55156535A JP15653580A JPS5782285A JP S5782285 A JPS5782285 A JP S5782285A JP 55156535 A JP55156535 A JP 55156535A JP 15653580 A JP15653580 A JP 15653580A JP S5782285 A JPS5782285 A JP S5782285A
- Authority
- JP
- Japan
- Prior art keywords
- bit lines
- amplifying circuit
- sense amplifying
- circuit
- cross
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To amplify the potential difference between bit lines without precharging a bit line, by driving a cross-coupled MIS transistor with capacitive coupling, in a sense amplifying circuit for dynamic RAM. CONSTITUTION:A sense amplifying circuit for dynamic random access memory consists mainly of transistors (TR)Q8, and Q9 separating bit lines BLA, BLB during operation and MIS TRs Q6, and Q7 of a pair in cross coupling in which the drains are coupled with the bit lines and the gates to for a latch circuit. The cross coupling type latch circuits Q6, and Q7 are driven with the capacitive coupling of capacitors C1 and C2 and a clock phis, the drain voltage is pulled up to amplify the voltage between the bit lines and it is further amplified with inversion amplifiers Q10 and Q12 (Q11 and Q13) to control the bit line charing circuit Q14(Q15).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55156535A JPS5782285A (en) | 1980-11-07 | 1980-11-07 | Sense amplifying circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55156535A JPS5782285A (en) | 1980-11-07 | 1980-11-07 | Sense amplifying circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5782285A true JPS5782285A (en) | 1982-05-22 |
| JPS6216475B2 JPS6216475B2 (en) | 1987-04-13 |
Family
ID=15629908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55156535A Granted JPS5782285A (en) | 1980-11-07 | 1980-11-07 | Sense amplifying circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5782285A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE37593E1 (en) | 1988-06-17 | 2002-03-19 | Hitachi, Ltd. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
| USRE40132E1 (en) | 1988-06-17 | 2008-03-04 | Elpida Memory, Inc. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5080736A (en) * | 1973-11-14 | 1975-07-01 | ||
| JPS54158828A (en) * | 1978-06-06 | 1979-12-15 | Toshiba Corp | Dynamic type semiconductor memory device |
-
1980
- 1980-11-07 JP JP55156535A patent/JPS5782285A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5080736A (en) * | 1973-11-14 | 1975-07-01 | ||
| JPS54158828A (en) * | 1978-06-06 | 1979-12-15 | Toshiba Corp | Dynamic type semiconductor memory device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE37593E1 (en) | 1988-06-17 | 2002-03-19 | Hitachi, Ltd. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
| USRE40132E1 (en) | 1988-06-17 | 2008-03-04 | Elpida Memory, Inc. | Large scale integrated circuit with sense amplifier circuits for low voltage operation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6216475B2 (en) | 1987-04-13 |
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