JPS5782290A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number: JPS5782290A
Authority: JP; Japan
Prior art keywords: word line; trs; readout; write; power supply
Prior art date: 1980-11-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP55159270A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0146956B2 (fr

Inventor

Hide Konishi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Tokyo Shibaura Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-11-12

Filing date

1980-11-12

Publication date

1982-05-22

1980-11-12 Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp

1980-11-12 Priority to JP55159270A priority Critical patent/JPS5782290A/ja

1982-05-22 Publication of JPS5782290A publication Critical patent/JPS5782290A/ja

1989-10-11 Publication of JPH0146956B2 publication Critical patent/JPH0146956B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1
101150113941 trt1 gene Proteins 0.000 abstract 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Static Random-Access Memory (AREA)

JP55159270A 1980-11-12 1980-11-12 Semiconductor storage device Granted JPS5782290A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP55159270A JPS5782290A (en)	1980-11-12	1980-11-12	Semiconductor storage device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP55159270A JPS5782290A (en)	1980-11-12	1980-11-12	Semiconductor storage device

Publications (2)

Publication Number	Publication Date
JPS5782290A true JPS5782290A (en)	1982-05-22
JPH0146956B2 JPH0146956B2 (fr)	1989-10-11

Family

ID=15690097

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP55159270A Granted JPS5782290A (en)	1980-11-12	1980-11-12	Semiconductor storage device

Country Status (1)

Country	Link
JP (1)	JPS5782290A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5819791A (ja) *	1981-07-27	1983-02-04	Seiko Epson Corp	半導体記憶装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5362433A (en) *	1976-11-17	1978-06-03	Hitachi Ltd	Sense circuit
JPS54112131A (en) *	1978-02-23	1979-09-01	Nec Corp	Sense amplifier circuit of mos memory

1980
- 1980-11-12 JP JP55159270A patent/JPS5782290A/ja active Granted

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5362433A (en) *	1976-11-17	1978-06-03	Hitachi Ltd	Sense circuit
JPS54112131A (en) *	1978-02-23	1979-09-01	Nec Corp	Sense amplifier circuit of mos memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5819791A (ja) *	1981-07-27	1983-02-04	Seiko Epson Corp	半導体記憶装置

Also Published As

Publication number	Publication date
JPH0146956B2 (fr)	1989-10-11

Similar Documents

Publication	Publication Date	Title
US4081701A (en)	1978-03-28	High speed sense amplifier for MOS random access memory
JPS648593A (en)	1989-01-12	Semiconductor storage device
GB1445010A (en)	1976-08-04	Memory system incorporating a memory cell and timing means on a single semiconductor substrate
KR880006837A (ko)	1988-07-25	고성능 디램을 위한 센스 증폭기
JPS6425394A (en)	1989-01-27	Nonvolatile semiconductor memory device
JPS5771587A (en)	1982-05-04	Semiconductor storing device
JPS5564686A (en)	1980-05-15	Memory unit
KR890015267A (ko)	1989-10-28	다이나믹형 반도체기억장치
KR870004450A (ko)	1987-05-09	반도체 기억장치
JPS5661088A (en)	1981-05-26	Semiconductor memory device
IE812977L (en)	1982-06-18	Semiconductors memory device
JPS57109190A (en)	1982-07-07	Semiconductor storage device and its manufacture
JPS5785255A (en)	1982-05-27	Memory storage for integrated circuit
US4380055A (en)	1983-04-12	Static RAM memory cell
JPS57113482A (en)	1982-07-14	Semiconductor storage device
JPS5517869A (en)	1980-02-07	Semiconductor memory device
IE811741L (en)	1982-01-31	Semiconductor read only memory device
JPS5782290A (en)	1982-05-22	Semiconductor storage device
DE3778388D1 (de)	1992-05-27	Halbleiter speichergeraet.
JPS5778695A (en)	1982-05-17	Semiconductor storage device
JPS57143795A (en)	1982-09-06	Nonvolatile semiconductor storage device
JPS54158828A (en)	1979-12-15	Dynamic type semiconductor memory device
US4989184A (en)	1991-01-29	Semiconductor memory device having current type sense amplifier improved for high speed operation and operating method therefor
JPS5712483A (en)	1982-01-22	Transistor circuit
TW332291B (en)	1998-05-21	Semiconductor memory, device for driving data signal of circuit to wanted level, circuit for driving first and second signal to wanted level, DRAM structure, method for driving data signal to wanted level, method for driving first and second signal to wa