JPS5783067A - Photoreceiving device - Google Patents

Photoreceiving device

Info

Publication number
JPS5783067A
JPS5783067A JP55158549A JP15854980A JPS5783067A JP S5783067 A JPS5783067 A JP S5783067A JP 55158549 A JP55158549 A JP 55158549A JP 15854980 A JP15854980 A JP 15854980A JP S5783067 A JPS5783067 A JP S5783067A
Authority
JP
Japan
Prior art keywords
devices
gamma rays
light
diodes
coming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55158549A
Other languages
Japanese (ja)
Inventor
Masataka Ito
Takeshi Koseki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55158549A priority Critical patent/JPS5783067A/en
Publication of JPS5783067A publication Critical patent/JPS5783067A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Light Receiving Elements (AREA)
  • Optical Communication System (AREA)

Abstract

PURPOSE:To produce a device immune to interference by gamma rays or the like by a method wherein a light signal receiving device and another of the same performance screened from the in-coming light are located so that both may be simultaneously exposed to gamma rays or the like and the difference between the signals going through the two devices are obtained. CONSTITUTION:Formed by selective diffusion at places opposite to each other on the outer sides of depletion layer regions 15 and 15a sandwiching an n<+> substrate 11 are p type regions. Then, SiO2 films 12a and 12b are deposited on the outer surfaces of depletion layers 15 and 15a and metal electrodes 14a and 14b are built on the SiO2 films 12a and 12b, producing two p-i-n diodes A and B coupled back to back with each other. The light emitting end of an optical fiber 16 is positioned facing the light receiving window 13a of one of the two devices, A for example, and a photosignal is inputted therein. The signals out of the diodes A and B are processed in a differential circuit 19 consisting of a subtractor from which they are yielded as a difference signal. Noises caused by such radioactive rays 18 as gamma rays coming into the devices are removed by mutual cancelling out. This photoreceiving device can be suitably employed in a control system for a nuclear power plant, etc.
JP55158549A 1980-11-11 1980-11-11 Photoreceiving device Pending JPS5783067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55158549A JPS5783067A (en) 1980-11-11 1980-11-11 Photoreceiving device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55158549A JPS5783067A (en) 1980-11-11 1980-11-11 Photoreceiving device

Publications (1)

Publication Number Publication Date
JPS5783067A true JPS5783067A (en) 1982-05-24

Family

ID=15674129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55158549A Pending JPS5783067A (en) 1980-11-11 1980-11-11 Photoreceiving device

Country Status (1)

Country Link
JP (1) JPS5783067A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583335A (en) * 1981-06-29 1983-01-10 Sumitomo Electric Ind Ltd optical receiver

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583335A (en) * 1981-06-29 1983-01-10 Sumitomo Electric Ind Ltd optical receiver

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