JPS5787625A - Mos integrated circuit - Google Patents
Mos integrated circuitInfo
- Publication number
- JPS5787625A JPS5787625A JP55163299A JP16329980A JPS5787625A JP S5787625 A JPS5787625 A JP S5787625A JP 55163299 A JP55163299 A JP 55163299A JP 16329980 A JP16329980 A JP 16329980A JP S5787625 A JPS5787625 A JP S5787625A
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- voltage
- node
- turns
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 abstract 3
- 230000010355 oscillation Effects 0.000 abstract 3
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Electronic Switches (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
PURPOSE:To obtain a prescribed voltage after the application of power supply in a short time, by applying an output of an oscillation circuit which is operated at the supply of power voltage to a charge pump capacitor and obtaining a boosted voltage. CONSTITUTION:An oscillation circuit OSC starts oscillation when a power supply voltage Vcc is applied. When a potential of a node N2 is at low level, an FETQ3 turns on and a capacitor C4 is charged up to about (Vcc-Vth). The Vth is the threshold value of the FET. When the node N2 is at high level, a node N3 increases to the power supply potential and an FETQ4 turns on, then a capacitor C5 is charged up to the power supply potential or more. At this time, the FETQ3 turns off in inverse bias. Through the repeated operation mentioned above, a voltage which is the power supply voltage Vcc or more is outputted to the node N4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55163299A JPS5787625A (en) | 1980-11-21 | 1980-11-21 | Mos integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55163299A JPS5787625A (en) | 1980-11-21 | 1980-11-21 | Mos integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5787625A true JPS5787625A (en) | 1982-06-01 |
Family
ID=15771182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55163299A Pending JPS5787625A (en) | 1980-11-21 | 1980-11-21 | Mos integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5787625A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6083297A (en) * | 1983-10-13 | 1985-05-11 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
| JPS60107857A (en) * | 1983-11-14 | 1985-06-13 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Voltage generating circuit in integrated circuit chip |
| JPS60253090A (en) * | 1984-05-30 | 1985-12-13 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-11-21 JP JP55163299A patent/JPS5787625A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6083297A (en) * | 1983-10-13 | 1985-05-11 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
| JPS60107857A (en) * | 1983-11-14 | 1985-06-13 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Voltage generating circuit in integrated circuit chip |
| JPS60253090A (en) * | 1984-05-30 | 1985-12-13 | Hitachi Ltd | Semiconductor device |
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