JPS5787625A - Mos integrated circuit - Google Patents

Mos integrated circuit

Info

Publication number
JPS5787625A
JPS5787625A JP55163299A JP16329980A JPS5787625A JP S5787625 A JPS5787625 A JP S5787625A JP 55163299 A JP55163299 A JP 55163299A JP 16329980 A JP16329980 A JP 16329980A JP S5787625 A JPS5787625 A JP S5787625A
Authority
JP
Japan
Prior art keywords
power supply
voltage
node
turns
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55163299A
Other languages
Japanese (ja)
Inventor
Yukinobu Chiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55163299A priority Critical patent/JPS5787625A/en
Publication of JPS5787625A publication Critical patent/JPS5787625A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electronic Switches (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To obtain a prescribed voltage after the application of power supply in a short time, by applying an output of an oscillation circuit which is operated at the supply of power voltage to a charge pump capacitor and obtaining a boosted voltage. CONSTITUTION:An oscillation circuit OSC starts oscillation when a power supply voltage Vcc is applied. When a potential of a node N2 is at low level, an FETQ3 turns on and a capacitor C4 is charged up to about (Vcc-Vth). The Vth is the threshold value of the FET. When the node N2 is at high level, a node N3 increases to the power supply potential and an FETQ4 turns on, then a capacitor C5 is charged up to the power supply potential or more. At this time, the FETQ3 turns off in inverse bias. Through the repeated operation mentioned above, a voltage which is the power supply voltage Vcc or more is outputted to the node N4.
JP55163299A 1980-11-21 1980-11-21 Mos integrated circuit Pending JPS5787625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55163299A JPS5787625A (en) 1980-11-21 1980-11-21 Mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55163299A JPS5787625A (en) 1980-11-21 1980-11-21 Mos integrated circuit

Publications (1)

Publication Number Publication Date
JPS5787625A true JPS5787625A (en) 1982-06-01

Family

ID=15771182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55163299A Pending JPS5787625A (en) 1980-11-21 1980-11-21 Mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS5787625A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6083297A (en) * 1983-10-13 1985-05-11 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS60107857A (en) * 1983-11-14 1985-06-13 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション Voltage generating circuit in integrated circuit chip
JPS60253090A (en) * 1984-05-30 1985-12-13 Hitachi Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6083297A (en) * 1983-10-13 1985-05-11 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS60107857A (en) * 1983-11-14 1985-06-13 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション Voltage generating circuit in integrated circuit chip
JPS60253090A (en) * 1984-05-30 1985-12-13 Hitachi Ltd Semiconductor device

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