JPS5789559A - Grinding surface plate - Google Patents
Grinding surface plateInfo
- Publication number
- JPS5789559A JPS5789559A JP55164585A JP16458580A JPS5789559A JP S5789559 A JPS5789559 A JP S5789559A JP 55164585 A JP55164585 A JP 55164585A JP 16458580 A JP16458580 A JP 16458580A JP S5789559 A JPS5789559 A JP S5789559A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- surface plate
- aluminum
- anodic oxidation
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 239000011148 porous material Substances 0.000 abstract 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 239000001117 sulphuric acid Substances 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
PURPOSE:To improve surface-polishing process with the use of fine abrasive particles, of flat plates such as, for example, IC substrate or magnetic discs, by treating, through anodic oxidation, the surface of an aluminium surface plate which is adapted to be used for polishing such a flat plate with use of free abrasive, so as to form specific small pores in the surface of the aluminum surface plate. CONSTITUTION:The surface of a grinding surface plate comprising a disc made of aluminum 9 having a of, for example, 99.99%, is machined so as to have a surface roughness of less than about 0.1mumRmax, and is treated through anodic oxidation in the electrolytic bath consisting of 10% sulphuric acid at a temperature of 10 deg.C under the application of an electrical current density of 3A/dm<2> so that a film surface 7 is formed on the surface thereof. This film 7 is such that its thickness is about 10mum, a lot of pores 8 having diameters of 300-500Angstrom are uniformly distributed over it, and its hardness is: HV 200.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55164585A JPS5789559A (en) | 1980-11-25 | 1980-11-25 | Grinding surface plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55164585A JPS5789559A (en) | 1980-11-25 | 1980-11-25 | Grinding surface plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5789559A true JPS5789559A (en) | 1982-06-03 |
Family
ID=15795961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55164585A Pending JPS5789559A (en) | 1980-11-25 | 1980-11-25 | Grinding surface plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5789559A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004107428A1 (en) | 2003-05-27 | 2004-12-09 | Sumco Corporation | Production method for semiconductor wafer |
-
1980
- 1980-11-25 JP JP55164585A patent/JPS5789559A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004107428A1 (en) | 2003-05-27 | 2004-12-09 | Sumco Corporation | Production method for semiconductor wafer |
| EP1632993A4 (en) * | 2003-05-27 | 2006-07-05 | Sumco Corp | PRODUCTION PROCESS FOR SEMICONDUCTOR PADS |
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