JPS5790988A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS5790988A
JPS5790988A JP16766980A JP16766980A JPS5790988A JP S5790988 A JPS5790988 A JP S5790988A JP 16766980 A JP16766980 A JP 16766980A JP 16766980 A JP16766980 A JP 16766980A JP S5790988 A JPS5790988 A JP S5790988A
Authority
JP
Japan
Prior art keywords
layer
type
current
connection
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16766980A
Other languages
Japanese (ja)
Inventor
Takuo Takenaka
Kazuhisa Murata
Saburo Yamamoto
Hiroshi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16766980A priority Critical patent/JPS5790988A/en
Publication of JPS5790988A publication Critical patent/JPS5790988A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To converge the current efficiently in a semiconductor light emitting element to achieve its low threshold current of oscillation by a method wherein an inner fringe is built in a clad layer at a connection layer side of a light emitting element of a double hetero-structure and thereon a large width of a connection use fringe is superimposed. CONSTITUTION:A P type Ga0.65Al0.35As2, GaAs active layer 3, an N type Ga0.65 Al0.35As 4 and an N type GaAs 5 are laminated on a P type GaAs layer 1. SiO2 mask 7 is applied on the layer 5 and a Zn diffusion layer 6 is formed to form a P type current converging area 8 is provided, and thereby a difference of the Zn diffusion rate occurs according to the difference Al mixed crystal ratio in layers 3 and 4, so that the inner fringe 8 appears in the layer 3, and a connecting section 9 of the large width is constituted inside the layer 5. The SiO2 mask 7 is removed, and metal electrodes 10 and 11 are deposited. Thus, the electrode 10 is sufficiently adhered to the N type connection layer 4, and also the connection of low resistance is gained. With this construction, current can be efficiently converged with the help of a simple fabrication, and a laser which can oscillate at a low threshold current.
JP16766980A 1980-11-27 1980-11-27 Semiconductor light emitting element Pending JPS5790988A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16766980A JPS5790988A (en) 1980-11-27 1980-11-27 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16766980A JPS5790988A (en) 1980-11-27 1980-11-27 Semiconductor light emitting element

Publications (1)

Publication Number Publication Date
JPS5790988A true JPS5790988A (en) 1982-06-05

Family

ID=15854020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16766980A Pending JPS5790988A (en) 1980-11-27 1980-11-27 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS5790988A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599991A (en) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp Semiconductor laser device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151486A (en) * 1974-05-27 1975-12-05
JPS5373089A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151486A (en) * 1974-05-27 1975-12-05
JPS5373089A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599991A (en) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp Semiconductor laser device

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