JPS5791554A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5791554A
JPS5791554A JP55167452A JP16745280A JPS5791554A JP S5791554 A JPS5791554 A JP S5791554A JP 55167452 A JP55167452 A JP 55167452A JP 16745280 A JP16745280 A JP 16745280A JP S5791554 A JPS5791554 A JP S5791554A
Authority
JP
Japan
Prior art keywords
transistors
diodes
flop
flip
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55167452A
Other languages
Japanese (ja)
Other versions
JPH0225262B2 (en
Inventor
Kiyobumi Ochii
Masami Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55167452A priority Critical patent/JPS5791554A/en
Priority to GB8314710A priority patent/GB2089157B/en
Priority to DE19813146734 priority patent/DE3146734A1/en
Publication of JPS5791554A publication Critical patent/JPS5791554A/en
Publication of JPH0225262B2 publication Critical patent/JPH0225262B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE: To suppress the wasteful current consumption by connecting diodes in series between a pair of transistors forming a memory flip-flop and a silicon resistor connected to the transistors to form a memory cell.
CONSTITUTION: Load resistors R, R' are connected through diodes D, D' to a pair of transistors Tr2, Tr2', thereby forming a flip-flop 14. The input of the flip-flop 14 is connected to data lines 12, 12' via transfer transistors Tr1, Tr1', the gates of which are connected to a word line 11. A pulse rectiangular signal ϕ is supplied is a power source to the memory cell thus formed. Since the memory continues even during t2 seconds in which a power signal is not supplied by the operations of the diodes D, D', no through current flows through the transistors Tr2, Tr2' in the meantime. The diodes D, D' may be simply formed by employing Schottky metal 17 for the electrodes of the transistors Tr2, Tr2'.
COPYRIGHT: (C)1982,JPO&Japio
JP55167452A 1980-11-28 1980-11-28 Semiconductor memory Granted JPS5791554A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55167452A JPS5791554A (en) 1980-11-28 1980-11-28 Semiconductor memory
GB8314710A GB2089157B (en) 1980-11-28 1981-11-18 Semiconductor storage circuit
DE19813146734 DE3146734A1 (en) 1980-11-28 1981-11-25 SEMICONDUCTOR MEMORY CIRCUIT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55167452A JPS5791554A (en) 1980-11-28 1980-11-28 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5791554A true JPS5791554A (en) 1982-06-07
JPH0225262B2 JPH0225262B2 (en) 1990-06-01

Family

ID=15849949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55167452A Granted JPS5791554A (en) 1980-11-28 1980-11-28 Semiconductor memory

Country Status (3)

Country Link
JP (1) JPS5791554A (en)
DE (1) DE3146734A1 (en)
GB (1) GB2089157B (en)

Also Published As

Publication number Publication date
GB2089157B (en) 1984-04-26
JPH0225262B2 (en) 1990-06-01
GB2089157A (en) 1982-06-16
DE3146734A1 (en) 1982-08-05

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