JPS579257A - Temperature compensation voltage controlling circuit - Google Patents
Temperature compensation voltage controlling circuitInfo
- Publication number
- JPS579257A JPS579257A JP8421380A JP8421380A JPS579257A JP S579257 A JPS579257 A JP S579257A JP 8421380 A JP8421380 A JP 8421380A JP 8421380 A JP8421380 A JP 8421380A JP S579257 A JPS579257 A JP S579257A
- Authority
- JP
- Japan
- Prior art keywords
- controlling circuit
- circuit
- output pulses
- temperature compensation
- compensation voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 abstract 3
- 230000007423 decrease Effects 0.000 abstract 2
- 238000007599 discharging Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Voltage And Current In General (AREA)
- Dc-Dc Converters (AREA)
Abstract
PURPOSE:To obtain a low power consumption temperature compensation voltage controlling circuit by providing a timing controlling circuit which alters the connecting timing of an electronic switch for switching charge transfer capacitor to charging or discharging loop in accordance with temperature. CONSTITUTION:A clock signal phi is shaped through an integrating circuit having a resistor R (T) and a capacitor C by an inverter INV, is supplied to ANd and NOR gates to be inputted with the clock signals phi, which gates thus produce output pulses 5a, 5b. These output pulses 5a, 5b are applied as clock signals of electronic switches S1, S2 which switch a charge transfer capacitor CT to the charging or discharging loop of a voltage doubler circuit. Since the resistor R (T) employs a thermistor which decreases its resistance value when the temperature rises, the pulse width of the output pulses 5a, 5b will decrease when the temperature rises, thereby lowering the output of the voltage doubler circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8421380A JPS579257A (en) | 1980-06-20 | 1980-06-20 | Temperature compensation voltage controlling circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8421380A JPS579257A (en) | 1980-06-20 | 1980-06-20 | Temperature compensation voltage controlling circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS579257A true JPS579257A (en) | 1982-01-18 |
Family
ID=13824191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8421380A Pending JPS579257A (en) | 1980-06-20 | 1980-06-20 | Temperature compensation voltage controlling circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS579257A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04179157A (en) * | 1990-10-30 | 1992-06-25 | Samsung Electron Co Ltd | Substrate voltage generating circuit for semiconductor device |
| US5408401A (en) * | 1990-10-31 | 1995-04-18 | Kabushiki Kaisha Toshiba | Power source circuit with a compact size and operating efficiently at low temperature |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112918B1 (en) * | 1968-08-12 | 1976-04-23 |
-
1980
- 1980-06-20 JP JP8421380A patent/JPS579257A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112918B1 (en) * | 1968-08-12 | 1976-04-23 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04179157A (en) * | 1990-10-30 | 1992-06-25 | Samsung Electron Co Ltd | Substrate voltage generating circuit for semiconductor device |
| US5408401A (en) * | 1990-10-31 | 1995-04-18 | Kabushiki Kaisha Toshiba | Power source circuit with a compact size and operating efficiently at low temperature |
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