JPS5795623A - Impurity source - Google Patents

Impurity source

Info

Publication number
JPS5795623A
JPS5795623A JP56023032A JP2303281A JPS5795623A JP S5795623 A JPS5795623 A JP S5795623A JP 56023032 A JP56023032 A JP 56023032A JP 2303281 A JP2303281 A JP 2303281A JP S5795623 A JPS5795623 A JP S5795623A
Authority
JP
Japan
Prior art keywords
diffused
substrate
impurity
layer
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56023032A
Other languages
Japanese (ja)
Inventor
Yasunobu Osa
Takahiko Anchi
Manabu Matsuzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56023032A priority Critical patent/JPS5795623A/en
Publication of JPS5795623A publication Critical patent/JPS5795623A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE:To decrease the dispersion of a diffused layer and to make it possible to use the layer repeatedly for a long time, by forming metal oxide material whose surface layer is porous in a wafer shape, impregnating conductive type determining imourities in the metal oxide, and obtaining the impurity source diffused in gaseous phase. CONSTITUTION:For example, porous ceramics 3 whose main component is alumina are stuck to both surfaces of non-porous ceramic substrate 2, and sintered. The size of the disk shaped ceramics is slightly larger than the wafer 4 which is to be diffused. Said substrate 1 is dipped in organic solution of e.g. B2O3, and the B2O3 is packed into air holes. Thereafter, the substrate is dried and the diffusing source of e.g. B is obtained. In the similar way, the substrate is dipped in the organic solution or suspension of phosphorous pentaoxide, antimony oxide, As2O3, and the like, and the impurity sources of P, Sb, and As are obtained. The impurity imregnated substrates 1 prepared in this way are placed on a boat 5 so as to face the diffused surface of the wafers 4. The boat is inserted into a furnace and the gaseous phase diffusion is performed. The dispersion in the diffused layer, in the wafer, within a lot, and between the lots can be decreased, and the reproducibility and the uniformity can be improved.
JP56023032A 1981-02-20 1981-02-20 Impurity source Pending JPS5795623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56023032A JPS5795623A (en) 1981-02-20 1981-02-20 Impurity source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56023032A JPS5795623A (en) 1981-02-20 1981-02-20 Impurity source

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP48005951A Division JPS4995567A (en) 1973-01-12 1973-01-12

Publications (1)

Publication Number Publication Date
JPS5795623A true JPS5795623A (en) 1982-06-14

Family

ID=12099127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56023032A Pending JPS5795623A (en) 1981-02-20 1981-02-20 Impurity source

Country Status (1)

Country Link
JP (1) JPS5795623A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244716A (en) * 1988-08-05 1990-02-14 Matsushita Electric Ind Co Ltd Method and apparatus for introducing impurity
JP2005286101A (en) * 2004-03-30 2005-10-13 Denki Kagaku Kogyo Kk Method for fixing boron compound and boron diffusion source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244716A (en) * 1988-08-05 1990-02-14 Matsushita Electric Ind Co Ltd Method and apparatus for introducing impurity
JP2005286101A (en) * 2004-03-30 2005-10-13 Denki Kagaku Kogyo Kk Method for fixing boron compound and boron diffusion source

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