JPS5796529A - Microwave plasma treating method - Google Patents

Microwave plasma treating method

Info

Publication number
JPS5796529A
JPS5796529A JP55172685A JP17268580A JPS5796529A JP S5796529 A JPS5796529 A JP S5796529A JP 55172685 A JP55172685 A JP 55172685A JP 17268580 A JP17268580 A JP 17268580A JP S5796529 A JPS5796529 A JP S5796529A
Authority
JP
Japan
Prior art keywords
specimen
temperature
microwave plasma
treating method
plasma treating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55172685A
Other languages
Japanese (ja)
Inventor
Hiroshi Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55172685A priority Critical patent/JPS5796529A/en
Publication of JPS5796529A publication Critical patent/JPS5796529A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To decrease the temperature of a resist film lower than a heat resisting limit temperature, by cooling a supporting table, with a specimen being sucked and closely contacted to the specimen supporting table by the pressure reduction. CONSTITUTION:An exhausting hole 7, which is opened from the surface of the specimen table 6 which is contacted with the specimen 5 through the specimen table, is provided. The specimen 5 is closely contacted with the specimen table 6 by reducing the pressure in said exhausting hole 7. Then, a flow path 8 which pierces through the specimen table 6 is provided. A refrigerant medium is flowed in said flowing path 8, and the specimen 5 on the specimen table 6 is cooled. In this method, the temperature of the specimen is not increased beyond a specified temperature. When etching is performed, streaking of resist film and degradation or incineration of the film can be prevented.
JP55172685A 1980-12-09 1980-12-09 Microwave plasma treating method Pending JPS5796529A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55172685A JPS5796529A (en) 1980-12-09 1980-12-09 Microwave plasma treating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55172685A JPS5796529A (en) 1980-12-09 1980-12-09 Microwave plasma treating method

Publications (1)

Publication Number Publication Date
JPS5796529A true JPS5796529A (en) 1982-06-15

Family

ID=15946456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55172685A Pending JPS5796529A (en) 1980-12-09 1980-12-09 Microwave plasma treating method

Country Status (1)

Country Link
JP (1) JPS5796529A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6083323A (en) * 1983-10-14 1985-05-11 Ulvac Corp Cooling method of substrate
US4938839A (en) * 1986-02-14 1990-07-03 Fujitsu Limited Method of removing photoresist on a semiconductor wafer
US4943344A (en) * 1986-10-29 1990-07-24 Hitachi, Ltd. Etching method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5473578A (en) * 1977-11-24 1979-06-12 Toshiba Corp Pattern exposure method of semiconductor substrate and pattern exposure apparatus
JPS5532022A (en) * 1978-08-26 1980-03-06 Nippon Telegr & Teleph Corp <Ntt> Correcting method of elongation or contraction quantity of wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5473578A (en) * 1977-11-24 1979-06-12 Toshiba Corp Pattern exposure method of semiconductor substrate and pattern exposure apparatus
JPS5532022A (en) * 1978-08-26 1980-03-06 Nippon Telegr & Teleph Corp <Ntt> Correcting method of elongation or contraction quantity of wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6083323A (en) * 1983-10-14 1985-05-11 Ulvac Corp Cooling method of substrate
US4938839A (en) * 1986-02-14 1990-07-03 Fujitsu Limited Method of removing photoresist on a semiconductor wafer
US4943344A (en) * 1986-10-29 1990-07-24 Hitachi, Ltd. Etching method

Similar Documents

Publication Publication Date Title
US4141224A (en) Closed loop spray cooling apparatus
JPS57114662A (en) Cathode sputtering apparatus for detecting target drill hole
GB2142283A (en) Liquid etching
EP0397315A3 (en) Method and apparatus for heating and cooling semiconductor wafers in semiconductor wafer processing equipment
JPS5796529A (en) Microwave plasma treating method
JPS57178348A (en) Cooling unit for semiconductor integrated circuit device
JPS5797616A (en) Base plate for vacuum equipment
ES8207329A1 (en) Method of and arrangement for recovering the heat of a continuously cast strand.
JPS531352A (en) Cooling medium flow control means
JPS57176384A (en) Compressor
JPS55121691A (en) Gas laser device
JPS57135836A (en) Glow discharge treatment
JPH0458095A (en) Deoxidizing equipment
JPS5737824A (en) Method and device for impurity diffusion
JPS54108579A (en) Method and device for plasma etching
JPS5722469A (en) Three-way valve
JPS56131934A (en) Manufacture of semiconductor device
ES8304630A1 (en) Liquid transport method.
JPS5596849A (en) Air blowing structure for air conditioner
JPS55154583A (en) Etching processing apparatus
JPS56108873A (en) Aftertreatment of continuously vacuum plated steel strip
JPS57121234A (en) Plasma processing and device thereof
JPS53128037A (en) Refrigeration apparatus
JPS5776188A (en) Gas plasma etching device
JPS57157080A (en) Oil diffusing pump