JPS58100419U - スラブコンクリ−ト打込み用電線管支持具 - Google Patents

スラブコンクリ−ト打込み用電線管支持具

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Publication number
JPS58100419U
JPS58100419U JP19855881U JP19855881U JPS58100419U JP S58100419 U JPS58100419 U JP S58100419U JP 19855881 U JP19855881 U JP 19855881U JP 19855881 U JP19855881 U JP 19855881U JP S58100419 U JPS58100419 U JP S58100419U
Authority
JP
Japan
Prior art keywords
support
conduit
pair
contact
standardized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19855881U
Other languages
English (en)
Other versions
JPS5852819Y2 (ja
Inventor
岩重哲志
大木英夫
Original Assignee
株式会社　ブレスト工業研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社　ブレスト工業研究所 filed Critical 株式会社　ブレスト工業研究所
Priority to JP19855881U priority Critical patent/JPS5852819Y2/ja
Publication of JPS58100419U publication Critical patent/JPS58100419U/ja
Application granted granted Critical
Publication of JPS5852819Y2 publication Critical patent/JPS5852819Y2/ja
Expired legal-status Critical Current

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Landscapes

  • Details Of Indoor Wiring (AREA)
  • Installation Of Indoor Wiring (AREA)
  • Supports For Pipes And Cables (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
図面はこの考案の実施例を示すもので、第１図は一部切
欠斜視図、第２図は縦断面図、第３図は底面図、第４図
は使用状態の一部省略正面図、第５図は電線管をアウト
レットボックスに連絡させた状態における一部省略正面
図、第６図は相互に隣接配置させるときでの連結手段を
形成した場合の斜視図、第７図はそれの使用状態の一部
省略正面図である。 Ｂ・・・・・・アウトレットボックス、Ｃ・・・・・・
スラブコンクリート、Ｎ・・・・・・電線管連絡孔、Ｐ
ｌ−・・・・・大径の電線管、Ｐ２・・・・・・小径の
電線管、Ｗ・・・・・・側壁、ｎ・・・・・・相互の間
隔、１・・・・・・支持体、２・・・・・・支持溝、３
Ａ・・・・・・外周内縁面、３Ｂ・・・・・・内周外縁
面、４・・・・・・柱体部ミ５・・・・・・案内テーパ
縁、６・・・・・・摘み部、７・・・・・・連結突条、
８・・・・・・連結凹条。

Claims (1)

  1. 【実用新案登録請求の範囲】 １　アウトレットボックスの一つの側壁においての規格
    化された１対の電線管連絡孔相互の間隔′に対応して、
    スラブコンクリート上に立脚露出される並列した同径或
    は異径の１対の電線管に跨がる大きさを有する支持体を
    形成し、この支持体底面に断面円環状の１対の支持溝を
    凹設配列し、支持溝それぞれの外周内縁面は規格化され
    た前記大径の電線管外周面に当接し、支持溝それぞれの
    内周外縁面は規格化された前言杯径の電線管内周面に当
    接するように形成したこと−を特徴とするスラブコンク
    リート打込み用電線管支持具。 ２　支持溝の配列内向での支持体外側の一方に連結突条
    を突設し、他方にこの連結突条に着脱自在に嵌着する連
    結凹条を凹設した実用新案登録請求の範囲第１項記載の
    スラブコンクリート打込み用電線管支持具。
JP19855881U 1981-12-26 1981-12-26 スラブコンクリ−ト打込み用電線管支持具 Expired JPS5852819Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19855881U JPS5852819Y2 (ja) 1981-12-26 1981-12-26 スラブコンクリ−ト打込み用電線管支持具

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19855881U JPS5852819Y2 (ja) 1981-12-26 1981-12-26 スラブコンクリ−ト打込み用電線管支持具

Publications (2)

Publication Number Publication Date
JPS58100419U true JPS58100419U (ja) 1983-07-08
JPS5852819Y2 JPS5852819Y2 (ja) 1983-12-01

Family

ID=30111739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19855881U Expired JPS5852819Y2 (ja) 1981-12-26 1981-12-26 スラブコンクリ−ト打込み用電線管支持具

Country Status (1)

Country Link
JP (1) JPS5852819Y2 (ja)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7094680B2 (en) 2001-02-02 2006-08-22 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US7352048B2 (en) 2001-09-26 2008-04-01 Applied Materials, Inc. Integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7473638B2 (en) 2002-01-26 2009-01-06 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7429516B2 (en) 2002-02-26 2008-09-30 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Also Published As

Publication number Publication date
JPS5852819Y2 (ja) 1983-12-01

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