JPS58100676A - Vacuum deposition equipment - Google Patents
Vacuum deposition equipmentInfo
- Publication number
- JPS58100676A JPS58100676A JP56199270A JP19927081A JPS58100676A JP S58100676 A JPS58100676 A JP S58100676A JP 56199270 A JP56199270 A JP 56199270A JP 19927081 A JP19927081 A JP 19927081A JP S58100676 A JPS58100676 A JP S58100676A
- Authority
- JP
- Japan
- Prior art keywords
- evaporation
- chamber
- vacuum
- source container
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、真空蒸着法にて、大量に薄膜を形成するため
の装置、例えば、金属薄膜形の磁気記録媒体を製造する
装置に関し、耐火物を蒸発源容器とする電子ビーム加熱
方式を改良し、品質の維持と生章性を向上させることの
できる装置の提供を目的とするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for forming thin films in large quantities by a vacuum evaporation method, for example, an apparatus for manufacturing magnetic recording media in the form of metal thin films, in which a refractory material is used as an evaporation source container. The purpose of this invention is to improve the electron beam heating method and to provide a device that can maintain quality and improve the quality of growth.
磁気記録の高密度化は目覚しく、その要求にこたえて磁
気記録媒体は高抗磁力化を進めてきたが、最近になって
限界がみえはじめ飽和磁束密度B8の大きい磁性材料を
用いて磁性層の厚みを薄くする試みが各所でなされるよ
うになってきている。The increase in the density of magnetic recording has been remarkable, and in response to this demand, magnetic recording media have been made to have higher coercive force, but recently the limit has begun to appear, and magnetic materials with a high saturation magnetic flux density B8 are being used to form the magnetic layer. Attempts to reduce the thickness are being made in various places.
これがいわゆるメタルテープといわれるもので、強磁性
粒子として、従来のγ−Fe2esや改良されたγ−F
!520s等の酸化物を、Fe等の金属微粒子で置き換
えたものである。しかしこれらは、バインダがあるため
、磁性層の実効的なり8は犬きくできない。This is what is called a metal tape, and the ferromagnetic particles include conventional γ-Fe2es and improved γ-F.
! The oxide such as 520s is replaced with metal fine particles such as Fe. However, because of the presence of a binder in these materials, the effective ratio of the magnetic layer cannot be increased.
これに対し、磁性層を蒸着により形成した磁性薄膜によ
り構成した、バインダのない、蒸着テープが究極の媒体
として登場し、注目されている。In contrast, a binder-free vapor-deposited tape, in which the magnetic layer is made of a magnetic thin film formed by vapor deposition, has emerged as the ultimate medium and is attracting attention.
これはコンデンサや金糸、銀糸等の蒸着に利用されてい
る巻取蒸着装置に手を加えて、製造されている。This is manufactured by modifying a winding vapor deposition device used for vapor deposition of capacitors, gold thread, silver thread, etc.
第1図がそれらの装置の主要構成部を示すものである。FIG. 1 shows the main components of these devices.
高分子材料からなるテープ状の基板1は、回転キャン2
に沿って、送シ出し軸3から、巻取軸4に移動する。巻
取り機構の他の要素は略す。A tape-shaped substrate 1 made of a polymeric material is attached to a rotating can 2.
It moves from the feed shaft 3 to the take-up shaft 4 along. Other elements of the winding mechanism are omitted.
蒸発源容器5は、回転キャン2の一部を見込むように配
され、その中に保持された蒸発材料は電子銃6より発生
した電子ビーム7により照射さ江一定の蒸発速度で蒸発
するように仕組まれる。The evaporation source container 5 is arranged so as to look into a part of the rotating can 2, and the evaporation material held therein is irradiated with an electron beam 7 generated from an electron gun 6 so that it evaporates at a constant evaporation rate. It is arranged.
8はマスクであり、蒸気流のキャン2に対する入射角を
制限し、主に抗磁力の制御に利用される。A mask 8 limits the angle of incidence of the vapor flow onto the can 2 and is mainly used to control coercive force.
真空槽9は、隔壁12により上室10と、下室11に分
離されている。下室は排気系13により排気される。上
室10の排気系、電子銃6部の排気系、ガス導入系など
は図示を省略しである。The vacuum chamber 9 is separated into an upper chamber 10 and a lower chamber 11 by a partition wall 12. The lower chamber is exhausted by an exhaust system 13. The exhaust system for the upper chamber 10, the exhaust system for the electron gun 6, the gas introduction system, etc. are not shown.
回転キャンの代りに、冷却された回転ベルトラ用いても
ほぼ類似の構成で実施される。A substantially similar configuration may be implemented using a cooled rotary belt tracker instead of the rotary can.
第1図の装置を用いて、蒸着テープを生産する場合に考
慮しなければならない点は、蒸着の繰り返しに対する蒸
着膜品質の安定、およびプロセスにおける蒸着実施時間
の占める割合をできる限り多くとるような工夫をするこ
とである。When producing a vapor-deposited tape using the apparatus shown in Figure 1, the points that must be taken into account are ensuring that the quality of the vapor-deposited film is stable over repeated vapor deposition, and ensuring that the proportion of the vapor-deposition time in the process is as large as possible. It is a matter of ingenuity.
この点からみて、一番大きな障害は、以下に述べるよう
な蒸発源容器に帰因する問題である。From this point of view, the biggest obstacle is the problem caused by the evaporation source container as described below.
即ち、大量蒸発のためには、従来電子ビーム蒸着におい
て用いられていた、水冷銅ハースが蒸発源容器として不
適であることから、耐火物を用いることか考えられた。That is, for mass evaporation, since the water-cooled copper hearth conventionally used in electron beam evaporation is not suitable as an evaporation source container, it has been considered to use a refractory material.
しかしながら、一般に耐火物は汚染源としてみなされ、
純度の高い膜を得ようとする場合は、使用さ扛ていなか
った。However, refractories are generally regarded as a source of pollution;
If trying to obtain a membrane with high purity, no filtration was used.
本発明者がム1205ルツボを用いて、Al2O5の純
度検討、耐火物容器の構造検討を進めた結果、使用方法
により汚染源としての作用に大きな差があることがわか
った。As a result of studying the purity of Al2O5 and the structure of a refractory container using the Mu1205 crucible, the present inventor found that there are large differences in its action as a source of contamination depending on how it is used.
第3図に方法人、方法B、および本発明による装置ヲ使
用した場合における、ルツボ使用回数と膜中の不純物濃
度との関係を調べた結果を示す。その測定に際しては、
蒸着の各回において、500tnm幅のテープに400
0 mの長さの蒸着を行ない、その幅の中央部ヲ捧イン
チ幅にスリットし、長さ100m分を酸でとかし、原子
吸光法で定量した。FIG. 3 shows the results of investigating the relationship between the number of times the crucible is used and the impurity concentration in the film when using Method B, Method B, and the apparatus according to the present invention. When measuring,
In each round of deposition, 400
A length of 0 m was deposited, a slit was made in the center of the width to a width of 1 inch, and the 100 m length was slit with acid and quantified by atomic absorption spectrometry.
蒸着材料は99・99%の電解コバルト’(r用いた。The vapor deposition material used was 99.99% electrolytic cobalt' (r).
テープの長さ方向における4000mの中での任意位置
1o点について測定し、平均値と)くラツキをとった。Measurements were made at 10 arbitrary positions within 4000 m in the length direction of the tape, and the average value and the irregularities were calculated.
方法人、B、および本発明の場合の各々についヤ、同様
の確認を夫々6回行った。その結果の平均値5・−ノ
が第3図に示したとおシである。各々の方法の違いは、
複数個の蒸着の間の移行時の条件にある。The same confirmation was carried out six times for each of the cases of Method Person, B, and the present invention. The average value of the results is shown in FIG. 3. The difference between each method is
Conditions during transition between multiple depositions.
すなわち、方法五は、蒸着終了後20分してから真空破
壊するという条件で実施され、方法Bは、蒸着終了後1
20分の冷却を行ってから真空破壊するという条件で実
施された。That is, method 5 is carried out under the condition that the vacuum is broken 20 minutes after the completion of vapor deposition, and method B is carried out under the condition that the vacuum is broken 20 minutes after the completion of vapor deposition.
The experiment was carried out under the condition that the vacuum was broken after cooling for 20 minutes.
方法Bの場合は、方法ムに比べてかなりの改良が認めら
れたが、ルツボの実用限度は高々6回である。In the case of Method B, a considerable improvement was observed compared to Method B, but the practical limit of the crucible is 6 times at most.
冷却時間’i120分以上にしても、それ以上の改良は
見込めないことと、蒸着に要す春時間が、70分弱なの
に対して、冷却のだめの時間が逆転していることから、
抜本的な改良が必要であり、ソフトウェアからの解決で
は困難で、装置面からの改良が必要となった。Even if the cooling time was increased to 120 minutes or more, no further improvement could be expected, and while the spring time required for vapor deposition was just under 70 minutes, the cooling time was reversed.
Fundamental improvements were needed, and since it was difficult to solve the problem through software, improvements were needed from the equipment perspective.
本発明は以上のような点に鑑みなされたもので以下にそ
の実施例を説明する。The present invention has been made in view of the above points, and embodiments thereof will be described below.
第2図は本発明の一実施例を、第1図の矢印ムの方向か
らみた断面で示した。FIG. 2 shows an embodiment of the present invention in a cross section taken in the direction of arrow M in FIG.
なお第1図に示した装置と同一の部分は、同一−7 番号を付して説明を省く。Note that the same parts as the device shown in Figure 1 are the same -7. Add numbers and omit explanations.
巻取り系すなわち、回転キャン2.送り出し軸3、およ
び巻取軸4はベースプレート14と、中間プレート15
とで両持ち構造にするのが普通である。回転軸3a等は
ベースプレート14を貫通しくシールは当然なされる。Winding system, i.e. rotating can 2. The feeding shaft 3 and the winding shaft 4 are connected to a base plate 14 and an intermediate plate 15.
It is common to have a double-sided structure. The rotating shaft 3a and the like pass through the base plate 14 and are naturally sealed.
)大気側にでて、モータなどと連結される。(図示は省
略)真空槽9は、下室11 (蒸着室ともいう)の一部
に連結された、蒸発源容器6の収納室16を具備する。) Exits to the atmosphere and is connected to a motor, etc. (Not shown) The vacuum chamber 9 includes a storage chamber 16 for the evaporation source container 6, which is connected to a part of the lower chamber 11 (also referred to as a deposition chamber).
下室11と収納室16は、ゲート弁17で仕切ることに
より互いに分離可能となっている。The lower chamber 11 and the storage chamber 16 can be separated from each other by partitioning them off with a gate valve 17.
蒸発源容器5は、エンペア18−ムおよび18−−Bに
より実線位置と、破線位置とを往噸できるよう構成され
る。The evaporation source container 5 is configured so that it can be moved between the solid line position and the broken line position by the engines 18- and 18-B.
゛収納室16の排気系(図示せず)は他の排気系とは独
立に具備する。19は電子銃、20は偏向走査用の磁界
発生コイルである。この両者は、耐火物からなる蒸発源
容器5の保温に用いられる。``An exhaust system (not shown) for the storage chamber 16 is provided independently from other exhaust systems. 19 is an electron gun, and 20 is a magnetic field generating coil for deflection scanning. Both are used to keep the evaporation source container 5 made of refractory warm.
電子ビーム加熱に限らず、ヒータによる輻射加熱であっ
ても本発明は同様に実施できる。なお、図示しないが、
ゲート弁17と真空槽9との間には真空シールが施され
ていることは言うまでもない。The present invention is not limited to electron beam heating, and the present invention can be similarly implemented using radiant heating using a heater. Although not shown,
Needless to say, a vacuum seal is provided between the gate valve 17 and the vacuum chamber 9.
第2図に示した装置により、4000mの長さにわたる
蒸着を実施し、蒸着終了後、ゲート弁17を開き、蒸発
源容器5を破線位置に移動し、ゲート弁を閉じ、20K
V、1.5ムの電子線で保温を開始すると同時に蒸着室
側の真空を破壊し、次の蒸着の準備を行い、蒸着室を排
気した後、再びゲート弁17を開き、蒸発源容器5を実
線位置に移動してゲート弁を閉じ、蒸着を開始する手順
で10回までの不純物濃度を調べた。その結果は、第3
図に示したように、極めて低い濃度に安定していた。Using the apparatus shown in FIG. 2, vapor deposition was carried out over a length of 4000 m. After the vapor deposition was completed, the gate valve 17 was opened, the evaporation source container 5 was moved to the position shown by the broken line, the gate valve was closed, and 20 K
At the same time, the vacuum on the deposition chamber side is broken to prepare for the next deposition, and after evacuating the deposition chamber, the gate valve 17 is opened again and the evaporation source container 5 is heated. was moved to the solid line position, the gate valve was closed, and the impurity concentration was checked up to 10 times using the procedure of starting vapor deposition. The result is the third
As shown in the figure, it was stable at extremely low concentrations.
このレベルは、水冷銅ハースを用いた、パッチ規模の蒸
着機で得られる膜中の不純物レベルとそん色のないもの
である。以上のように、多数回の蒸着を繰り返し実施で
きるので、実質的な蒸着時間の割合を大きくとることが
できる。This level is comparable to the level of impurities in films obtained in patch-scale deposition machines using water-cooled copper hearths. As described above, since the vapor deposition can be repeated many times, the substantial proportion of the vapor deposition time can be increased.
本発明は蒸発源容器5を形成する耐火物がム1205に
限らず、ZrO2,MgO等で構成されてぃ特開昭58
−10flG7[1(3)′ても全く同じ効果を発揮で
きるものである。また、蒸発材料の種類、蒸発材料の供
給方式、蒸発源容器の形状、冷却機構などに依存しない
で適用でき、るものでもある。In the present invention, the refractory forming the evaporation source container 5 is not limited to Mu1205, but may be composed of ZrO2, MgO, etc.
-10flG7[1(3)' can exhibit exactly the same effect. Furthermore, it can be applied regardless of the type of evaporation material, the method of supplying the evaporation material, the shape of the evaporation source container, the cooling mechanism, etc.
以上の説明は、磁気テープの製造装置の楓合について述
べたが、これに限らず、大量の蒸着を亮純度で行う場合
、本発明を有効に用いることができる。Although the above description has been made regarding the folding of a magnetic tape manufacturing apparatus, the present invention is not limited to this, and the present invention can be effectively used when a large amount of vapor deposition is performed with high purity.
以上のように本発明により、高品質の蒸着テープの製造
が量産規模で行え、その工業的有価値性は太きいものが
ある。As described above, according to the present invention, a high-quality vapor-deposited tape can be manufactured on a mass production scale, and its industrial value is great.
第1図は、従来の真空蒸着装置を示す図、第2図は、本
発明の一実施例における真空蒸着装置の断面図、第3図
は、従来の装置および本発明による装置を用い蒸着を行
なった場合の、ルツボ使用回数と蒸着膜中の不純物濃度
との関係を示す図である。
1・・・・・・基板、3・・・・・・送り出し軸、4・
・・・・・巻取り軸、5・・・・・・蒸発源容器、16
・・・・・・収納室、17・・・9・・−ノ
・・・ゲート弁、19・・・・・・電子銃。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名II
I図FIG. 1 is a diagram showing a conventional vacuum evaporation apparatus, FIG. 2 is a cross-sectional view of a vacuum evaporation apparatus according to an embodiment of the present invention, and FIG. 3 is a diagram showing evaporation using the conventional apparatus and the apparatus according to the present invention. FIG. 4 is a diagram showing the relationship between the number of times the crucible is used and the impurity concentration in the deposited film when the method is used. 1... Board, 3... Feeding shaft, 4...
... Winding shaft, 5 ... Evaporation source container, 16
...Storage room, 17...9...-Gate valve, 19...Electron gun. Name of agent: Patent attorney Toshio Nakao and one other person II
I diagram
Claims (1)
ム蒸着を行うように構成され、強磁性材料の蒸発源容器
を真空を保ったまま収納する収納室が蒸着室に連結され
、かつ上記収納室に上記蒸発源容器の加熱手段が具備さ
れていることを特徴とする真空蒸着装置。A storage chamber configured to perform electron beam evaporation on a tape-shaped polymer substrate while winding it up and housing an evaporation source container of a ferromagnetic material while maintaining a vacuum is connected to the evaporation chamber, and the storage chamber is connected to the evaporation chamber. A vacuum evaporation apparatus characterized in that the chamber is equipped with heating means for the evaporation source container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56199270A JPS58100676A (en) | 1981-12-09 | 1981-12-09 | Vacuum deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56199270A JPS58100676A (en) | 1981-12-09 | 1981-12-09 | Vacuum deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58100676A true JPS58100676A (en) | 1983-06-15 |
Family
ID=16404989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56199270A Pending JPS58100676A (en) | 1981-12-09 | 1981-12-09 | Vacuum deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58100676A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005045094A1 (en) * | 2003-11-04 | 2005-05-19 | Superpower, Inc. | A tape-manufacturing system having extended operational capabilities |
-
1981
- 1981-12-09 JP JP56199270A patent/JPS58100676A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005045094A1 (en) * | 2003-11-04 | 2005-05-19 | Superpower, Inc. | A tape-manufacturing system having extended operational capabilities |
| US7914848B2 (en) | 2003-11-04 | 2011-03-29 | Superpower, Inc. | Tape-manufacturing system having extended operational capabilities |
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