JPS58103155U - 反射防止被膜を設けた珪素太陽電池 - Google Patents

反射防止被膜を設けた珪素太陽電池

Info

Publication number
JPS58103155U
JPS58103155U JP1982101870U JP10187082U JPS58103155U JP S58103155 U JPS58103155 U JP S58103155U JP 1982101870 U JP1982101870 U JP 1982101870U JP 10187082 U JP10187082 U JP 10187082U JP S58103155 U JPS58103155 U JP S58103155U
Authority
JP
Japan
Prior art keywords
vapor deposition
layer
solar cell
type region
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1982101870U
Other languages
English (en)
Inventor
アコス・ジヨ−ジ・レベスズ
ロバ−ト・ジヨン・デンダル
Original Assignee
コミユニケ−シヨンズ・サテライト・コ−ポレ−シヨン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コミユニケ−シヨンズ・サテライト・コ−ポレ−シヨン filed Critical コミユニケ−シヨンズ・サテライト・コ−ポレ−シヨン
Publication of JPS58103155U publication Critical patent/JPS58103155U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図ないし第１１図は本考案による太陽電池を製造す
る各工程を示す断面図、第１２図は本考案太陽電池の構
造を示す断面図である。 １０・叩フ接合、１２・・・ｎ型領域、１４・・・ｎ型
領域、１６・・・面、１８・・・金属被膜、２０・・・
酸化物層、２２・・・マスク金属層、２４・・・ホトレ
ジスト層、２Ｂ・・・金属層、３０・・・電極、３２・
・・保護膜。

Claims (1)

  1. 【実用新案登録請求の範囲】 ｐ−ｎ接合１０と、ｎ型領域１２と、ｎ型領域１４とを
    有し、ｎ型領域の側を太陽光線に対する露光面とする半
    導体素子を有し、 この露光面側にＮｂ、　Ｔａ、　Ｚｒ、　Ｈｆ中より選
    択した金属を蒸着し、かつこれを気相酸化して形成した
    反射防止層２０を設け、　　− この反射防止層２０には、蒸着マスク金属層、ホトレジ
    スト層を用いてエツチングにより設けたホトレジスト層
    のパターン開口に応じるパターン開口２６を設け、この
    開口内に蒸着により形成した金属電極を配置し、 ホトレジストと蒸着マスク金属層をリフト・オフ工程に
    より除去した上側表面には有害放射線よ　　　゛り保護
    する保護膜３２を蒸着により設け、前記半導体素子の露
    光面とは反対の側に蒸着による金属接点を設けたことを
    特徴とする反射防止被膜を設けた珪素太陽電池。
JP1982101870U 1973-08-22 1982-07-07 反射防止被膜を設けた珪素太陽電池 Pending JPS58103155U (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US390672A US3904453A (en) 1973-08-22 1973-08-22 Fabrication of silicon solar cell with anti reflection film
US390672 2006-03-28

Publications (1)

Publication Number Publication Date
JPS58103155U true JPS58103155U (ja) 1983-07-13

Family

ID=23543449

Family Applications (2)

Application Number Title Priority Date Filing Date
JP49042071A Pending JPS5046492A (ja) 1973-08-22 1974-04-15
JP1982101870U Pending JPS58103155U (ja) 1973-08-22 1982-07-07 反射防止被膜を設けた珪素太陽電池

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP49042071A Pending JPS5046492A (ja) 1973-08-22 1974-04-15

Country Status (11)

Country Link
US (1) US3904453A (ja)
JP (2) JPS5046492A (ja)
AU (1) AU476141B2 (ja)
BE (1) BE810947A (ja)
CA (1) CA1030380A (ja)
DE (1) DE2408235A1 (ja)
FR (1) FR2241880B1 (ja)
GB (1) GB1452633A (ja)
IT (1) IT1011730B (ja)
NL (1) NL7405995A (ja)
SE (1) SE386012B (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165774U (ja) * 1974-11-20 1976-05-24
US4347264A (en) * 1975-09-18 1982-08-31 Solarex Corporation Method of applying contacts to a silicon wafer and product formed thereby
US4098917A (en) * 1976-09-08 1978-07-04 Texas Instruments Incorporated Method of providing a patterned metal layer on a substrate employing metal mask and ion milling
US4201798A (en) * 1976-11-10 1980-05-06 Solarex Corporation Method of applying an antireflective coating to a solar cell
US4156622A (en) * 1976-11-10 1979-05-29 Solarex Corporation Tantalum oxide antireflective coating and method of forming same
US4297391A (en) * 1979-01-16 1981-10-27 Solarex Corporation Method of applying electrical contacts to a photovoltaic cell
US4228446A (en) * 1979-05-10 1980-10-14 Rca Corporation Reduced blooming device having enhanced quantum efficiency
US4246043A (en) * 1979-12-03 1981-01-20 Solarex Corporation Yttrium oxide antireflective coating for solar cells
US4359487A (en) * 1980-07-11 1982-11-16 Exxon Research And Engineering Co. Method for applying an anti-reflection coating to a solar cell
US4336295A (en) * 1980-12-22 1982-06-22 Eastman Kodak Company Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device
US4328260A (en) * 1981-01-23 1982-05-04 Solarex Corporation Method for applying antireflective coating on solar cell
DE3131958A1 (de) * 1981-08-13 1983-02-24 Solarex Corp., 14001 Rockville, Md. Verfahren zur bildung eines antireflektionsueberzuges auf der oberflaeche von sonnenenergiezellen.
JPS5829069U (ja) * 1981-08-18 1983-02-25 株式会社佐文工業所 ミシンの全回転釜の内釜押え
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
US20080041443A1 (en) * 2006-08-16 2008-02-21 Hnuphotonics Thinned solar cell
US8236598B2 (en) * 2007-08-31 2012-08-07 Ferro Corporation Layered contact structure for solar cells
US7784917B2 (en) 2007-10-03 2010-08-31 Lexmark International, Inc. Process for making a micro-fluid ejection head structure
US20090139868A1 (en) * 2007-12-03 2009-06-04 Palo Alto Research Center Incorporated Method of Forming Conductive Lines and Similar Features
US8008574B2 (en) * 2008-06-03 2011-08-30 Hamilton Sundstrand Corporation Photo cell with spaced anti-oxidation member on fluid loop
WO2010077622A1 (en) * 2008-12-08 2010-07-08 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
TWI431790B (zh) * 2011-09-01 2014-03-21 Gintech Energy Corp 太陽能電池

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3135638A (en) * 1960-10-27 1964-06-02 Hughes Aircraft Co Photochemical semiconductor mesa formation
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
US3533850A (en) * 1965-10-13 1970-10-13 Westinghouse Electric Corp Antireflective coatings for solar cells
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process

Also Published As

Publication number Publication date
BE810947A (fr) 1974-08-13
FR2241880B1 (ja) 1977-03-04
FR2241880A1 (ja) 1975-03-21
US3904453A (en) 1975-09-09
IT1011730B (it) 1977-02-10
SE7401511L (ja) 1975-02-24
CA1030380A (en) 1978-05-02
AU476141B2 (en) 1976-09-09
GB1452633A (en) 1976-10-13
JPS5046492A (ja) 1975-04-25
AU6529474A (en) 1975-08-07
DE2408235A1 (de) 1975-02-27
NL7405995A (nl) 1975-02-25
SE386012B (sv) 1976-07-26

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