JPS58103231A - Switching device of high frequency signal - Google Patents

Switching device of high frequency signal

Info

Publication number
JPS58103231A
JPS58103231A JP56202722A JP20272281A JPS58103231A JP S58103231 A JPS58103231 A JP S58103231A JP 56202722 A JP56202722 A JP 56202722A JP 20272281 A JP20272281 A JP 20272281A JP S58103231 A JPS58103231 A JP S58103231A
Authority
JP
Japan
Prior art keywords
signal switching
switching device
high frequency
output terminal
frequency signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56202722A
Other languages
Japanese (ja)
Other versions
JPH0348694B2 (en
Inventor
Noboru Kawamoto
河本 登
Terumoto Akatsuka
輝元 赤塚
Joji Nakamura
中村 穣治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56202722A priority Critical patent/JPS58103231A/en
Publication of JPS58103231A publication Critical patent/JPS58103231A/en
Publication of JPH0348694B2 publication Critical patent/JPH0348694B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H03K17/76Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Landscapes

  • Electronic Switches (AREA)
  • Filters And Equalizers (AREA)

Abstract

PURPOSE:To obtain the pass characteristics of a low loss for a switching device which has two input terminals and a common output terminal, by forming a filter circuit or a tuning circuit when a signal switching active element is turned on. CONSTITUTION:A capacitor 15 is connected between an input terminal 4 and a resistance 13 to improve a low band loss due to an inductance element 5. Then a high band pass filter circuit is formed with the element 5 and the capacitor 15 when a transistor 2 functioning as a signal switching active element is turned on. As a result, the loss can be greatly reduced for the frequency of a low band. Thus the pass characteristics can be obtained with a low loss. The same effect is ensured by forming a tuning circuit in place of the filter circuit.

Description

【発明の詳細な説明】 本発明は2つの信号入力端子を有し、出力端子を共通と
した高周波信号切換装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high frequency signal switching device having two signal input terminals and having a common output terminal.

従来、この種の高周波信号切換装置は第1図に示すよう
な構成であシ、第1図においてB電源よりダイオード1
およびトランジスタ2に順方向バイアスが供給されてい
る時は、入力端子3からの信号はトランジスタ2で遮断
され、入力端子4からの信号が通過する。一方、逆方向
バイアスまたは電源オフ時は、逆に入力端子4からの信
号は遮断され、そして入力端子3からの信号は、インダ
クタンス素子5,6とコンデンサ7とからなる低域通過
フィルタを通って出力端子8に信号が送られるのである
。なお、9,10は直流阻止用コンデンサ、11は高周
波チョークコイル、12,13は直流バイアス供給用抵
抗、14は高周波バイパス用コンデンサである。
Conventionally, this type of high frequency signal switching device has a configuration as shown in Fig. 1, in which diode 1 is connected from power source B.
When forward bias is supplied to transistor 2, the signal from input terminal 3 is blocked by transistor 2, and the signal from input terminal 4 passes. On the other hand, when reverse biased or the power is turned off, the signal from input terminal 4 is blocked, and the signal from input terminal 3 passes through a low-pass filter consisting of inductance elements 5 and 6 and capacitor 7. A signal is sent to the output terminal 8. Note that 9 and 10 are DC blocking capacitors, 11 is a high frequency choke coil, 12 and 13 are DC bias supply resistors, and 14 is a high frequency bypass capacitor.

ところで、この第1図の高周波信号切換装置においては
、B電源にトランジスタ2およびダイオード1に順方向
バイアスが供給された時、インダクタンス素子6はトラ
ンジスタ2により接地さね、この時の等節回路は第2図
に示すようになる。この第2図において、インダクタン
ス素子5は低周波領域では低インピーダンスであり、入
力端子4から出力端子8への伝送特性は、低周波領域で
損失が増加することとなる。また、インダクタンス素子
5・、6の代りにコンデンサを用い、コンデンサ7の代
りにインダクタンス素子を用いた場合においても、コン
デンサによる高周波領域でのインピーダンス低下による
損失が増加する欠点が生じていた。
By the way, in the high frequency signal switching device shown in FIG. 1, when a forward bias is supplied to the B power supply to the transistor 2 and the diode 1, the inductance element 6 is grounded by the transistor 2, and the equinodal circuit at this time is The result is as shown in FIG. In FIG. 2, the inductance element 5 has low impedance in the low frequency range, and the transmission characteristic from the input terminal 4 to the output terminal 8 has an increased loss in the low frequency range. Further, even when capacitors are used in place of the inductance elements 5 and 6, and an inductance element is used in place of the capacitor 7, there is a drawback that loss increases due to impedance reduction in the high frequency range due to the capacitor.

本発明はこのような従来の欠点を解決するもので、イン
ダクタンス素子の低周波領域またはコンデンサの高周波
領域での損失の増加を改善することを目的とするもので
ある。
The present invention solves these conventional drawbacks, and aims to improve the increase in loss in the low frequency range of an inductance element or in the high frequency range of a capacitor.

この目的を達成するために本発明においては、第1の入
力端子と出力端子\との間に直列に複数個のりアクタン
ス素子を接続するとともに、その複数個のりアクタンス
素°子の中間接続点とアースとの間に信号切換能動素子
を接続し、かつ前記リアクタンス素子のうち中間接続点
と出力端子との間に接続したりアクタンス素子が前記信
号切換能動素子をオンした時に第2の入力端子からの信
号を出力端子に通過させるフィルタ回路または同調回路
の一素子となるように構成したものである。以下、本発
明による高周波信号切換装置について、第3図〜第7図
の図面を用いて説明する。なお、第3図〜第7図におい
て、第1図と同一箇所については同一番号を付している
0 第3図に本発明の一実施例による高周波信号切換装置を
示しておシ、この第3図に示す実施例においては、イン
ダクタンス素子5による低域損失改善のためのコンデン
サ16を入力端子4と抵抗13との間に挿入接続し、信
号切換能動素子としてのトランジスタ2がオンした時に
インダクタンス素子6とコンデンサ16とにより高域フ
ィルタ回路が構成されるようにしたものである0また、
第4図に本発明の他の実施例による高周波信号切換装置
を示しており、この第4図に示す実施例においては、ダ
イオード1と出力端子8との間に接続したインダクタン
ス素子16と、トランジスタ2と出力端子8との間に接
続したコンデンサ17とで低域フィルタ回路を構成した
ものである。なお、この実施例においては、コンデンサ
7の代シにインダクタンス素子18を用い、インダクタ
ンス素子6の代りにコンデンサ19を用いている。
In order to achieve this object, in the present invention, a plurality of glue actance elements are connected in series between the first input terminal and the output terminal, and an intermediate connection point of the plurality of glue actance elements is connected to the first input terminal and the output terminal. A signal switching active element is connected between the ground and the intermediate connection point of the reactance element and the output terminal, or from the second input terminal when the actance element turns on the signal switching active element. It is configured to be one element of a filter circuit or a tuning circuit that allows the signal to pass through to the output terminal. Hereinafter, the high frequency signal switching device according to the present invention will be explained using the drawings of FIGS. 3 to 7. Note that in FIGS. 3 to 7, the same parts as in FIG. 1 are given the same numbers. FIG. In the embodiment shown in FIG. 3, a capacitor 16 is inserted and connected between the input terminal 4 and the resistor 13 to improve low-frequency loss due to the inductance element 5, and when the transistor 2 as a signal switching active element is turned on, the inductance increases. A high-pass filter circuit is constructed by the element 6 and the capacitor 16.
FIG. 4 shows a high frequency signal switching device according to another embodiment of the present invention. In the embodiment shown in FIG. 4, an inductance element 16 connected between the diode 1 and the output terminal 8, and a transistor 2 and a capacitor 17 connected between the output terminal 8 and the output terminal 8 constitute a low-pass filter circuit. In this embodiment, an inductance element 18 is used in place of the capacitor 7, and a capacitor 19 is used in place of the inductance element 6.

さらに、第5図に本発明の他の実施例による高周波信号
切換装置を示しておシ、この第5図に示す実施例におい
ては、入力端子4側にコンデンサ20.21.22,2
3およびインダクタンス素子24をインダクタンス素子
3が付加されることによって同調回路を構成するように
挿入接続したものである。25はダイオード1と出力端
子8との間に挿入接続したインダクタンス素子である。
Furthermore, FIG. 5 shows a high frequency signal switching device according to another embodiment of the present invention. In the embodiment shown in FIG.
3 and an inductance element 24 are inserted and connected so that a tuned circuit is formed by adding the inductance element 3. 25 is an inductance element inserted and connected between the diode 1 and the output terminal 8.

第6図にこの第5図に示す高周波信号切換装置の伝送特
性を示している。
FIG. 6 shows the transmission characteristics of the high frequency signal switching device shown in FIG.

ここで、第7図に、第1図に示す従来の高周波信号切換
装置(曲線イ)と第3図に示す本発明による高周波信号
切換装置(曲線口)との伝送特性を比較して示している
Here, FIG. 7 shows a comparison of the transmission characteristics of the conventional high-frequency signal switching device (curve A) shown in FIG. 1 and the high-frequency signal switching device according to the present invention (curve opening) shown in FIG. There is.

この第6図から明らかなように、第3図に示す本発明に
よる高周波信号切換装置においては、低域の周波数にお
ける損失を大幅に改善することができ、低損失の通過特
性を得ることができる。
As is clear from FIG. 6, in the high-frequency signal switching device according to the present invention shown in FIG. 3, the loss at low frequencies can be significantly improved, and low-loss passing characteristics can be obtained. .

以上のように本発明による高周波信号切換装置によれば
、信号切換能動素子をオンした時にフィルタ回路または
同調回路が構成されるようにしたものであり、損失の少
ない良好な伝送特性を得ることができるのである。
As described above, according to the high frequency signal switching device according to the present invention, a filter circuit or a tuning circuit is configured when the signal switching active element is turned on, and it is possible to obtain good transmission characteristics with little loss. It can be done.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の高周波信号切換装置を示す回路図、第2
図は同装置のトランジスタがオンした時の等価回路図、
第3図〜第6図はそれぞれ本発明の実施例による高周波
信号切換装置を示す回路烈第6図は第5図に示す切換装
置の伝送特性図、第7図は従来の切換装置と本発明の切
換装置の伝送特性を比較して示す伝送特性図である。 1・・・・S拳ダイオード、2・11@・・・トランジ
スタ、17.19,20,21.22,23φ・e・・
・コンデンサ、8a・・・・・出力端子。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 〃 12図 13図 第4図
Figure 1 is a circuit diagram showing a conventional high frequency signal switching device, Figure 2 is a circuit diagram showing a conventional high frequency signal switching device.
The figure is an equivalent circuit diagram when the transistor of the same device is turned on.
3 to 6 are circuit diagrams showing high frequency signal switching devices according to embodiments of the present invention. FIG. 6 is a transmission characteristic diagram of the switching device shown in FIG. 5, and FIG. 7 is a diagram showing a conventional switching device and the present invention. FIG. 3 is a transmission characteristic diagram showing a comparison of transmission characteristics of the switching devices of FIG. 1...S fist diode, 2.11@...transistor, 17.19, 20, 21.22, 23φ・e...
・Capacitor, 8a...Output terminal. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 12 Figure 13 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 第1の入力端子と出力端子との間に直列に複数個のりア
クタンス素子を接続するとともに、その複数個のりアク
タンス素子の中間接続点とアースとの間に信号切換能動
素子を接続し、かつ前記リアクタンス素子のうち中間接
続点と出力端子との間に接続したり7クタンス素子が前
記信号切換能動素子をオンした時にi2の入力端子から
の信号を出力端子に通過させるフィルタ回路または同調
回路の一素子となるように構成した高周波信号切換装置
A plurality of glue actance elements are connected in series between the first input terminal and the output terminal, and a signal switching active element is connected between the intermediate connection point of the plurality of glue actance elements and the ground, and One of the filter circuits or tuning circuits that are connected between the intermediate connection point and the output terminal among the reactance elements, or that pass the signal from the input terminal of i2 to the output terminal when the reactance element turns on the signal switching active element. A high frequency signal switching device configured to act as an element.
JP56202722A 1981-12-15 1981-12-15 Switching device of high frequency signal Granted JPS58103231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56202722A JPS58103231A (en) 1981-12-15 1981-12-15 Switching device of high frequency signal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56202722A JPS58103231A (en) 1981-12-15 1981-12-15 Switching device of high frequency signal

Publications (2)

Publication Number Publication Date
JPS58103231A true JPS58103231A (en) 1983-06-20
JPH0348694B2 JPH0348694B2 (en) 1991-07-25

Family

ID=16462074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56202722A Granted JPS58103231A (en) 1981-12-15 1981-12-15 Switching device of high frequency signal

Country Status (1)

Country Link
JP (1) JPS58103231A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574201A (en) * 1981-09-28 1986-03-04 Alps Electric Co., Ltd. Radio frequency switching circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54135150U (en) * 1979-03-08 1979-09-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54135150U (en) * 1979-03-08 1979-09-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574201A (en) * 1981-09-28 1986-03-04 Alps Electric Co., Ltd. Radio frequency switching circuit device

Also Published As

Publication number Publication date
JPH0348694B2 (en) 1991-07-25

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