JPS58106953U - transistor - Google Patents
transistorInfo
- Publication number
- JPS58106953U JPS58106953U JP514282U JP514282U JPS58106953U JP S58106953 U JPS58106953 U JP S58106953U JP 514282 U JP514282 U JP 514282U JP 514282 U JP514282 U JP 514282U JP S58106953 U JPS58106953 U JP S58106953U
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- transistor
- base region
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のトランジスタを説明する断面図、第２図
はその等価回路図、第３図および第４図は本考案のトラ
ンジスタを説明する断面図および上面図、第５図は本考
案の等価回路図である。
主な図番の説明、２１はＰ型半導体基板、２２−はＮ型
エピタキシャル層、２３は島領域、２４はＰ型分離領域
、２６はＮ十型埋込み層、２６はＰ型ベース領域、２７
はＮ一型エミッタ領域、２９はＰ型捕獲領域、３０はエ
ミッタ電極。FIG. 1 is a sectional view illustrating a conventional transistor, FIG. 2 is an equivalent circuit diagram thereof, FIGS. 3 and 4 are sectional views and top views illustrating a transistor according to the present invention, and FIG. 5 is a cross-sectional view illustrating a transistor according to the present invention. It is an equivalent circuit diagram. Explanation of main figure numbers: 21 is a P-type semiconductor substrate, 22- is an N-type epitaxial layer, 23 is an island region, 24 is a P-type isolation region, 26 is an N-type buried layer, 26 is a P-type base region, 27
is an N-type emitter region, 29 is a P-type capture region, and 30 is an emitter electrode.
Claims (1)
領域となる逆導電型のエビタキシャル層と、該エビタキ
シャル層を島領域に分離する一導電型の分離領域と、該
島領域底面に設けられた逆導電型の埋込み層と、該埋込
み層上の前記島領域表面に形成されたー導電型のベース
領域と該ベース領域表面に形成された逆導電型のエミツ
タ領域とを具備したトランジスタに於いて、前記ベース
領域を囲む様に一導電型の捕獲領域を設け該捕獲領域と
エミツタ電極とを接続することを特徴とするトランジス
タ。a semiconductor substrate of one conductivity type; an epitaxial layer of an opposite conductivity type provided on the substrate and serving as a collector region; a separation region of one conductivity type that separates the epitaxial layer into island regions; A transistor comprising a buried layer of an opposite conductivity type, a base region of a conductivity type formed on a surface of the island region on the buried layer, and an emitter region of a reverse conductivity type formed on a surface of the base region. A transistor characterized in that a capture region of one conductivity type is provided so as to surround the base region, and the capture region and an emitter electrode are connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP514282U JPS58106953U (en) | 1982-01-18 | 1982-01-18 | transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP514282U JPS58106953U (en) | 1982-01-18 | 1982-01-18 | transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58106953U true JPS58106953U (en) | 1983-07-21 |
Family
ID=30017954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP514282U Pending JPS58106953U (en) | 1982-01-18 | 1982-01-18 | transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58106953U (en) |
-
1982
- 1982-01-18 JP JP514282U patent/JPS58106953U/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58106953U (en) | transistor | |
| JPS58106954U (en) | diode | |
| JPS6113956U (en) | Zener diode incorporated into integrated circuit | |
| JPS58124953U (en) | Semiconductor integrated circuit device | |
| JPS6113955U (en) | Zener diode incorporated into integrated circuit | |
| JPS6078147U (en) | capacitor | |
| JPS60137451U (en) | semiconductor resistance device | |
| JPS60144255U (en) | transistor | |
| JPS5887363U (en) | semiconductor equipment | |
| JPS58168149U (en) | transistor | |
| JPS59131156U (en) | semiconductor integrated circuit | |
| JPS60153550U (en) | Lateral transistor | |
| JPS6115760U (en) | Semiconductor integrated circuit device | |
| JPS60125747U (en) | capacitor | |
| JPS60149150U (en) | semiconductor equipment | |
| JPS60137450U (en) | semiconductor resistance device | |
| JPS5860951U (en) | semiconductor equipment | |
| JPS6115761U (en) | Semiconductor integrated circuit device | |
| JPS60153548U (en) | Lateral transistor | |
| JPS60160558U (en) | substrate type transistor | |
| JPS58111953U (en) | Bipolar protection circuit | |
| JPS6139959U (en) | semiconductor equipment | |
| JPS5846461U (en) | Semiconductor integrated circuit device | |
| JPS5995645U (en) | semiconductor equipment | |
| JPS58150851U (en) | transistor |