JPS5812478A - Manufacture of solid state image pickup device - Google Patents

Manufacture of solid state image pickup device

Info

Publication number
JPS5812478A
JPS5812478A JP56109348A JP10934881A JPS5812478A JP S5812478 A JPS5812478 A JP S5812478A JP 56109348 A JP56109348 A JP 56109348A JP 10934881 A JP10934881 A JP 10934881A JP S5812478 A JPS5812478 A JP S5812478A
Authority
JP
Japan
Prior art keywords
package
metallic frame
glass plate
soldering material
welding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56109348A
Other languages
Japanese (ja)
Inventor
Yoshio Iwata
岩田 吉雄
Tsutomu Fujita
努 藤田
Atsuki Furunaga
古長 篤己
Kiyoyuki Miyata
宮田 清之
Hiroshi Kosemura
小瀬村 弘
Masami Kiyono
清野 政美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56109348A priority Critical patent/JPS5812478A/en
Publication of JPS5812478A publication Critical patent/JPS5812478A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To minimize thermal strain applied to a translucent glass plate, and to obtain a highly reliable solid image pickup device, by previously depositing a soldering material on at least either one of a metallic frame body of a package side or that on a cap side. CONSTITUTION:On a metallic frame body 11 on the side of a package 1, an Au/ Sn soldering material 12 is deposited previously. Consequently, metallic frame bodies 9 and 11 are seam-welded together with a small welding current, and the heating value during the welding is reduced to reduce residual thermal strain to a transparent glass plate 7. Further, the soldering material 12 is stuck previously on the metallic frame body 11 on the package 1 to eliminate a splash of the soldering material 12 completely during the welding to the metallic frame 9 on the side of a cap 10. Further, the sticking of black stains, etc., on the internal surface of the glass plate 7 or on the surface of a photodetecting element 5 is prevented securely and completely to perform stable welding operation.

Description

【発明の詳細な説明】 本発明は固体撮像装置の製造方法、特に固体撮像素子の
パッケージング方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a solid-state imaging device, and particularly to a method for packaging a solid-state imaging device.

@1図は近年提案されている固体撮像装置の一例を要部
断面構成図である。同図において、セラミックなどから
なるパッケージ1は、その中央部分に段部1aと底部1
bとからなる四部ICを有し、上記段部1aの所定位置
にはポンディングパッド2が形成されている。このポン
ディングパッド2はパッケージ1の内部に積層して形成
された金属導電パターン3に接続され、さらにパッケー
ジ1の側面に固着された外部接続用リード端子4に接続
されている。また、このパッケージ1の凹部1cの内部
には固体撮像素子(以下受光素子と称する)5が底部1
bに接着して配置され、この受光素子5のポンディング
パッド5aはボンディングワイヤStt介して上記パッ
ケージ1の段部1a上に形成されたポンディングパッド
2に接続されている。そして、このパツケージ1はその
開口端側、つまり前面側に、収納された受光素子5の劣
化を防止するために透光性ガラス板T、セラミック枠体
8およびコバールなどの金属枠体9からなるキャップ1
0が被せられ、このキャップ10の上記金属枠体Sとパ
ッケージ1の上段部に形成配置されたコパールなどの金
属枠体11とをAu/Snロー材12を介在させてシー
ムウェルド溶接などの局部加熱を用いて溶接することに
よって気密封止されている。
Figure @1 is a cross-sectional configuration diagram of essential parts of an example of a solid-state imaging device that has been proposed in recent years. In the figure, a package 1 made of ceramic or the like has a stepped portion 1a and a bottom portion 1 at its center.
A bonding pad 2 is formed at a predetermined position of the stepped portion 1a. This bonding pad 2 is connected to a metal conductive pattern 3 laminated inside the package 1, and further connected to an external connection lead terminal 4 fixed to the side surface of the package 1. Further, inside the recess 1c of this package 1, a solid-state image sensor (hereinafter referred to as a light receiving element) 5 is located at the bottom 1.
The bonding pad 5a of the light receiving element 5 is connected to the bonding pad 2 formed on the stepped portion 1a of the package 1 via a bonding wire Stt. The package 1 is made up of a translucent glass plate T, a ceramic frame 8, and a metal frame 9 made of Kovar or the like on its open end side, that is, on its front side, in order to prevent the housed light-receiving element 5 from deteriorating. cap 1
The metal frame S of this cap 10 and the metal frame 11 formed and arranged in the upper part of the package 1, such as copal, are locally welded by seam welding etc. with an Au/Sn brazing material 12 interposed. Hermetically sealed by welding using heat.

しかしながら上記構成による固体撮像装置においては、
上記金属枠体9と11間にAm/8m四−材12を介在
さ電でシームウェルド封止を行なう場合、Au/Inn
−材12は溶融して上記金属枠体■と11との両側に同
時に溶着させる必要性から、大きな溶接電流が必要とな
る。このため、溶接する際の発生熱により上記透光性ガ
ラス板Tに熱歪が残留し、応力が加わった状態で封止さ
れ、その後の使用中の熱履歴によっては透光性ガラス板
Tにクラッタが生じることがあり、信頼性の点で大きな
問題となっていた。
However, in the solid-state imaging device with the above configuration,
When performing seam weld sealing by interposing the Am/8m four-material 12 between the metal frames 9 and 11, Au/Inn
- Since the material 12 needs to be melted and welded to both sides of the metal frames 1 and 11 at the same time, a large welding current is required. For this reason, thermal distortion remains in the translucent glass plate T due to the heat generated during welding, and the translucent glass plate T is sealed under stress, and depending on the heat history during subsequent use, the translucent glass plate T Clutter may occur, which poses a major problem in terms of reliability.

したがって本発明は、田−材をパッケージ側ノ金属枠体
もしくはキャップ側の金属枠体の少なくとも一方に予め
溶着しておくことによって、透光性ガラス板に加わる熱
歪を最小限に抑え、信頼性の高い固体撮像装置が得られ
る製造方法を提供することを目的としている。
Therefore, the present invention minimizes the thermal strain applied to the translucent glass plate by welding the metal material to at least one of the metal frame on the package side and the metal frame on the cap side in advance, thereby achieving reliable reliability. The present invention aims to provide a manufacturing method that allows a solid-state imaging device with high performance to be obtained.

以下図面を用いて本発明の実施例を詳細に説明する。Embodiments of the present invention will be described in detail below with reference to the drawings.

第2図は本発明による圃体撮―装置の製造方法の一例を
説明するための要部断面構成図であり、前述の図と同記
号は同一要素となるのでその説明は省略する。112図
において、パッケージ1の上段部に形成配置された金属
枠体11上にはAm/Bnロー材12が予め溶着して接
着配置されている。
FIG. 2 is a cross-sectional configuration diagram of essential parts for explaining an example of a method for manufacturing a field imaging device according to the present invention. Since the same symbols as those in the above-mentioned figures represent the same elements, the explanation thereof will be omitted. In FIG. 112, an Am/Bn brazing material 12 is welded and bonded in advance on a metal frame 11 formed and arranged in the upper part of the package 1.

そして、このパッケージ1の金属枠体11上に接着配置
されたムu/8na−材12上に中ヤツプ10の金属枠
体9を配置して金属枠体8と11とを溶接してシームウ
ェルドさせる。
Then, the metal frame 9 of the middle cover 10 is placed on the mu/8na material 12 adhesively placed on the metal frame 11 of the package 1, and the metal frames 8 and 11 are welded to form a seam weld. let

このような方法によれば、パッケージ1側の金属枠体1
1上に予めA u/8 mロー材12が溶着されている
ので、金属枠体■と11との間を小さな溶接電流でシー
ムウェルドすることが可能となり、したがって溶接する
際の発生熱量も少なくなり、透光性ガラス板Tへの熱歪
の残留も小さくなる。
According to such a method, the metal frame 1 on the package 1 side
Since the A u/8 m brazing material 12 is welded on the metal frame 1 in advance, it is possible to seam weld the metal frame 1 and the metal frame 11 with a small welding current, and therefore the amount of heat generated during welding is also small. Therefore, residual thermal strain on the translucent glass plate T is also reduced.

また、An/8nF1−材12が予めパッケージ1上の
金属枠体9上に固着して配置されているので、キャップ
10側の金属枠体9との溶接時にAm/8nロー材12
のスプラッシユが皆無となり、透光性ガラス板Tの内置
および受光素子5の表面上に黒い汚れ等の付着を確実に
かつ完全に防止することができるので、安定した溶接作
業が可能となる。
Moreover, since the An/8nF1-material 12 is fixedly placed on the metal frame 9 on the package 1 in advance, the Am/8n brazing material 12 is fixedly placed on the metal frame 9 on the cap 10 side.
Since there is no splash and it is possible to reliably and completely prevent the adhesion of black dirt and the like on the inner placement of the translucent glass plate T and the surface of the light receiving element 5, stable welding work is possible.

なお、上記実施例においては、パッケージ1の金属枠体
11上にムu/8no−材12を予め溶着固定させた場
合について説明したが、キャップ10の金属枠体9上に
Am/8nロー材12を予め溶着固定させても良く、さ
らに両者の金属枠体口。
In the above embodiment, a case has been described in which the Mu/8N brazing material 12 is welded and fixed on the metal frame 11 of the package 1 in advance. 12 may be welded and fixed in advance, and the metal frame openings of both may be welded and fixed in advance.

11上にAn/Snロー材1ロー材め溶着固定させた後
、溶接しても前述と全く同様の効果が得られた。
Even when the An/Sn brazing material 1 was welded and fixed on No. 11 and then welded, exactly the same effect as described above was obtained.

また、上記実施例において、ロー材としてムC8m四−
材を用いた場合について説−したが、本発明はこれに限
定されるものではなく、半田等の低融点性の胃−材を用
いても前述と全く同様の効果が得られることは勿論であ
る。
In addition, in the above embodiment, MuC8m4 was used as the brazing material.
Although the case where a material is used has been described, the present invention is not limited to this, and it goes without saying that the same effect as described above can be obtained even if a material with a low melting point such as solder is used. be.

以上説明したように本発明による固体撮像装置の製造方
法によれば、前面側の透光性ガラス板に発生する熱歪が
激減し、かっ透光性ガラス板の内面および受光素子の表
面にロー材のスプラッシユの付着が皆無となり、信頼性
の高い固体撮像装置が得られるとともに、歩留りを大幅
に向上させることができるなどの極めて優れた効果を有
する。
As explained above, according to the method of manufacturing a solid-state imaging device according to the present invention, the thermal strain generated in the front side translucent glass plate is drastically reduced, and the heat distortion on the inner surface of the translucent glass plate and the surface of the light receiving element is reduced. This method has extremely excellent effects such as no material splash adhesion, a highly reliable solid-state imaging device, and a significant improvement in yield.

【図面の簡単な説明】[Brief explanation of the drawing]

111図は固体撮像装置の一例を示す要部断面構成図、
1112図は本発明による固体撮像装置のS遣方法の一
例を示す要部断面図である。 1・・・・パッケージ、11・・・・段部、lb・・・
@底部、1c・・・・凹部、2φ・・・ボンデインパッ
ド、3・・拳・金属導電パターン、4・11Φ・外部接
続用リード端子、5・・・・固体撮像素子(受光素子)
、5a・・・・ボンディングパッド、6・・−・ボンデ
ィングワイヤ、T・・・・透光性ガラス板、8・・・・
セラミック枠体、9・・・・金属枠体、10・・・・午
ヤップ、11−−−拳金属枠体、1211・・・Au/
s!10−材。
Figure 111 is a cross-sectional configuration diagram of main parts showing an example of a solid-state imaging device;
FIG. 1112 is a sectional view of a main part showing an example of a method for using the solid-state imaging device according to the present invention. 1...package, 11...stepped section, lb...
@bottom, 1c...concavity, 2φ...bond pad, 3...fist/metal conductive pattern, 4/11Φ/lead terminal for external connection, 5...solid-state image sensor (light receiving element)
, 5a... bonding pad, 6... bonding wire, T... translucent glass plate, 8...
Ceramic frame body, 9... Metal frame body, 10... Au Yap, 11---Fist metal frame body, 1211... Au/
s! 10-Material.

Claims (1)

【特許請求の範囲】[Claims] 凹部に固体撮像素子を収納固定したパッケージと前記パ
ッケージの開口端を覆うキャップとを局部加熱により溶
融固着させたロー材によって気密封止させた固体撮像装
置の製造方法において、前記ロー材を、前記パッケージ
の開口端、キャップの少なくとも一方に予め溶着固体さ
せた彼、局部加熱により気密封止させたことを特徴とす
る固体撮像装置の製造方法。
A method for manufacturing a solid-state imaging device in which a package in which a solid-state imaging device is housed and fixed in a recessed part and a cap covering an open end of the package are hermetically sealed with a brazing material that is melted and fixed by local heating, wherein the brazing material is A method for producing a solid-state imaging device, characterized in that at least one of the open end of the package and the cap is welded solid in advance and hermetically sealed by local heating.
JP56109348A 1981-07-15 1981-07-15 Manufacture of solid state image pickup device Pending JPS5812478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56109348A JPS5812478A (en) 1981-07-15 1981-07-15 Manufacture of solid state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56109348A JPS5812478A (en) 1981-07-15 1981-07-15 Manufacture of solid state image pickup device

Publications (1)

Publication Number Publication Date
JPS5812478A true JPS5812478A (en) 1983-01-24

Family

ID=14507942

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56109348A Pending JPS5812478A (en) 1981-07-15 1981-07-15 Manufacture of solid state image pickup device

Country Status (1)

Country Link
JP (1) JPS5812478A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168295A (en) * 1983-03-16 1984-09-21 Hitachi Ltd Turbo molecular pump
JPS60247385A (en) * 1984-05-22 1985-12-07 Sharp Corp Package sealing method of solid-state image pickup device
JPS61207892A (en) * 1985-03-11 1986-09-16 Hitachi Ltd Turbomolecule pump
JPS63140197U (en) * 1987-03-06 1988-09-14
JPH0185493U (en) * 1987-11-30 1989-06-06

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5465675A (en) * 1977-11-04 1979-05-26 Toray Industries Sack for packing wool
JPS54146985A (en) * 1978-05-10 1979-11-16 Hitachi Ltd Package for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5465675A (en) * 1977-11-04 1979-05-26 Toray Industries Sack for packing wool
JPS54146985A (en) * 1978-05-10 1979-11-16 Hitachi Ltd Package for semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168295A (en) * 1983-03-16 1984-09-21 Hitachi Ltd Turbo molecular pump
JPS60247385A (en) * 1984-05-22 1985-12-07 Sharp Corp Package sealing method of solid-state image pickup device
JPS61207892A (en) * 1985-03-11 1986-09-16 Hitachi Ltd Turbomolecule pump
JPS63140197U (en) * 1987-03-06 1988-09-14
JPH0185493U (en) * 1987-11-30 1989-06-06

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