JPS5814073B2 - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS5814073B2 JPS5814073B2 JP53147673A JP14767378A JPS5814073B2 JP S5814073 B2 JPS5814073 B2 JP S5814073B2 JP 53147673 A JP53147673 A JP 53147673A JP 14767378 A JP14767378 A JP 14767378A JP S5814073 B2 JPS5814073 B2 JP S5814073B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- photoelectric conversion
- receiving element
- conversion device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Description
【発明の詳細な説明】
本発明は、ファクシミリ等の読み取り系に用いる原稿と
1=1に対応する大きさの光電変換装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoelectric conversion device having a size corresponding to 1=1 with a document used in a reading system of a facsimile machine or the like.
従来、ファクシミリ等の送信原稿の読み取り系について
は、第1図に示したように、送信原稿1を螢光灯等の照
明光源2で均一に照明し、その反射光をレンズ3によっ
て光電変換装置4に結像させて時系列の電気信号を得て
いk0この場合、光電変換装置4はMOSあるいはCO
D等のIC技術によって製造された2omm程度のチッ
プサイズであるため、送信原稿1としてA,(200x
290mm2)を用いると、レンズの縮率は1/1。Conventionally, as shown in FIG. 1, in a reading system for a transmitted document such as a facsimile machine, a transmitted document 1 is uniformly illuminated with an illumination light source 2 such as a fluorescent lamp, and the reflected light is transmitted through a lens 3 to a photoelectric conversion device. In this case, the photoelectric conversion device 4 is a MOS or CO
Since the chip size is about 20mm manufactured using IC technology such as D, A, (200x
290mm2), the reduction ratio of the lens is 1/1.
程度となり、送信原稿1から光電変換装置4までの距離
は相当太き《なるので、装置が大形化する欠点があった
。Since the distance from the transmission document 1 to the photoelectric conversion device 4 is considerably large, there is a drawback that the device becomes large in size.
これに対して、光学系としてレンズを用いるかわりに、
第2図に示したように、螢光灯などの照明光源2で照明
された送信原稿1からの反射光を簡単なライトガイドま
たはオプテイ力ルファイバなどの導光系5を通じて大形
センサアレイ6に導く方法も知られている。On the other hand, instead of using lenses as an optical system,
As shown in FIG. 2, reflected light from a transmission document 1 illuminated by an illumination light source 2 such as a fluorescent lamp is transmitted to a large sensor array 6 through a light guiding system 5 such as a simple light guide or optical fiber. There are also known methods of guiding.
この場合には、原稿とセンサ間の距離はレンズを用いる
系に比べて大幅に短縮でき、全体として小形化できる利
点はあるが、導光系とセンサとの位置合わせかむすかし
《、また導光系が高価であるなどの欠点もあった。In this case, the distance between the document and the sensor can be significantly shortened compared to a system that uses lenses, and the overall size can be reduced, but it is difficult to align the light guide system and the sensor. There were also drawbacks such as the expensive optical system.
以上の欠点を解決する方法として、導光系を用いないで
、センサと原稿を密着させて直接読み取る方式が提案さ
れている。As a method for solving the above-mentioned drawbacks, a method has been proposed in which the sensor and the document are brought into close contact with each other and the document is directly read without using a light guiding system.
この方式は、第3図に示したように、透光性基板7上に
受光素子8の列を形成し、その上部に透明保護層9を設
けたものである。In this method, as shown in FIG. 3, a row of light-receiving elements 8 is formed on a transparent substrate 7, and a transparent protective layer 9 is provided on top of the array.
なお、第3図では電極、配線関係は省略されている。In addition, in FIG. 3, electrodes and wiring relationships are omitted.
第3図において、透光性基板7の下方におかれた照明光
源2からの光束10は、透光性基板7、受光素子8間の
間隙、透明保護層9を通って送信原稿1を照明し、その
反射光は受光素子8で捕えられ、光電変換されるもので
ある。In FIG. 3, a luminous flux 10 from an illumination light source 2 placed below a translucent substrate 7 passes through a gap between the translucent substrate 7, a light receiving element 8, and a transparent protective layer 9, and illuminates a transmission document 1. However, the reflected light is captured by the light receiving element 8 and photoelectrically converted.
この場合の受光素子より得られる光電変換出力は、照明
光源から直接受光素子を照明する光束(妨害光となる)
10′と原稿面からの反射光束(信号光となる)が合成
されたものであり、この妨害光によってSN比が低下す
る欠点があった。In this case, the photoelectric conversion output obtained from the light receiving element is the light flux that directly illuminates the light receiving element from the illumination light source (which becomes interference light).
10' and the reflected light beam from the document surface (which becomes signal light) are combined, and this interference light has the drawback of lowering the S/N ratio.
本発明は、上記従来例の欠点を除去するために受光素子
列を直接照明するのを防止する遮光層を設けた密着読取
方式の光電変換装置を提供するものである。The present invention provides a close reading type photoelectric conversion device that is provided with a light-shielding layer that prevents direct illumination of the light-receiving element array in order to eliminate the drawbacks of the conventional example.
以下、図面により実施例を詳細に説明する。Hereinafter, embodiments will be described in detail with reference to the drawings.
第4図は、本発明の実施例を示したもので、1は原稿、
2は螢光灯などの照明光源、Iは透光性基板、8は受光
素子列(電極は省略されている)9は透明保護層、10
ぱ光源2より発せられる照明光の中で原稿を照明し、反
射光が受光素子8へ達する光束、10′は同じく光源2
より発せられる照明光の中で、直接受光素子へ向かう光
束(妨害光)、11はこΩ妨害光を遮断する遮光層であ
りこの遮光層は例えば不透明の金属膜で構成され、また
この遮光層11の形状は受光素子のサイズより少し大き
めにしてお《。FIG. 4 shows an embodiment of the present invention, in which 1 is a manuscript;
2 is an illumination light source such as a fluorescent lamp, I is a transparent substrate, 8 is a light receiving element array (electrodes are omitted), 9 is a transparent protective layer, 10
The document is illuminated in the illumination light emitted from the light source 2, and the reflected light reaches the light receiving element 8, and 10' is also the light source 2.
Among the illumination light emitted from the light receiving element, 11 is a light-shielding layer that blocks the light flux (interfering light) that goes directly to the light-receiving element. The shape of 11 should be slightly larger than the size of the light receiving element.
また12は遮光層11の上を覆うように連続的につけら
れた透明絶縁層である。Further, reference numeral 12 denotes a transparent insulating layer that is continuously applied to cover the light shielding layer 11.
次に、本実施例の動作を説明する。Next, the operation of this embodiment will be explained.
まず、光源2よシ発する光束10は遮光層8間の間隙お
よび透明絶縁層12、透明保護層9を通って原稿1を照
明し、この原稿1からの反射光は受光素子8で捕獲され
て九電変換される。First, the light beam 10 emitted from the light source 2 illuminates the original 1 through the gap between the light shielding layers 8, the transparent insulating layer 12, and the transparent protective layer 9, and the reflected light from the original 1 is captured by the light receiving element 8. Converted to Kyuden.
また照明光束の一部10′は直接受光素子8へ向かう光
束であるが、遮光層11によって遮光されるため、受光
素子8へ達せず妨害光とはならない。Further, a portion 10' of the illumination light beam is a light beam that goes directly to the light receiving element 8, but because it is blocked by the light shielding layer 11, it does not reach the light receiving element 8 and does not become interfering light.
従って、SN比の高い密着読み取り方式の光電変換装置
が構成できる.また、本発明の構成では、遮光層11が
不透光性金属層とその上を覆う透光性絶縁層から成って
おり、その上に形成される受光素子8と電気的に独立し
ているから、受光素子およびその電極材料の選択の自由
度が大きいという特徴も有している。Therefore, a close-contact reading type photoelectric conversion device with a high signal-to-noise ratio can be constructed. Furthermore, in the configuration of the present invention, the light-shielding layer 11 is composed of a non-light-transmitting metal layer and a light-transmitting insulating layer covering the metal layer, and is electrically independent from the light-receiving element 8 formed thereon. Therefore, it also has the feature that there is a large degree of freedom in selecting the light receiving element and its electrode material.
第5図は、本発明の他の実施例を示したもので遮光層1
1を覆う透明絶縁層が個別になっていることを除いては
、第4図の実施例と同様の構成を有しており、その動作
も第4図の実施例と同様である。FIG. 5 shows another embodiment of the present invention, in which the light shielding layer 1
The structure is similar to that of the embodiment shown in FIG. 4, except that the transparent insulating layer covering 1 is separate, and the operation thereof is also similar to that of the embodiment shown in FIG.
なお、この構成では、遮光層11の上に透?絶縁層を重
ねて被着するかわりに、遮光層として表面層を容易に酸
化できる金属、例えばTaやSiなどを用いると、陽極
酸化や空気中加熱酸化などによってTa205やSiO
などの酸化被膜を表面に形成することができるので、製
造工程が簡略化される特徴を有している。Note that in this configuration, a transparent layer is formed on the light shielding layer 11. Instead of stacking insulating layers, if a metal whose surface layer can be easily oxidized, such as Ta or Si, is used as a light-shielding layer, Ta205 or SiO
Since it is possible to form an oxide film such as on the surface, the manufacturing process is simplified.
また絶縁層を個別につける場合には、透光性が少しぐら
い悪くても影響がないので、絶縁層の選択が自由度も太
き《なる。Furthermore, when insulating layers are individually applied, there is no effect even if the light transmittance is slightly poor, so there is a greater degree of freedom in selecting the insulating layer.
第6図は、本発明の遮光層11の形状の例を示したもの
で、第3図と同一符号のものは同一のものを示しており
、第6図aは遮光層の形状が受光素子(電極は省略され
ている)の形状とほぼ同じ場合、第6図bは遮光層がス
トライプの場合、第6図Cは遮光層が連続しており、受
光素子間に開口を有する場合をそれぞれ示している。FIG. 6 shows an example of the shape of the light shielding layer 11 of the present invention, where the same reference numerals as in FIG. (electrodes are omitted), Fig. 6b shows a case where the light-shielding layer is a stripe, and Fig. 6c shows a case where the light-shielding layer is continuous and has an opening between the light-receiving elements. It shows.
以上説明したように、本発明は、透明基板の裏面より光
を照射し、前面に密接して置かれた原稿を反射光によっ
て読取る方式の大形イメージセンサにおいて、受光素子
と基板との間に不透光性金属層と透光性絶縁層より成る
遮光層を設けたので、裏面から受光素子に直接当たる光
束を防ぐことができ、すぐれたSN比が得られ、かつ小
形化も可能であることから、ファクシミリ用センサとし
て有用であるばかりでなく、パターン認識やマークリー
グ用などのセンサとしても充分使用できる利点がある。As explained above, the present invention provides a large image sensor that irradiates light from the back side of a transparent substrate and reads a document placed closely to the front side using reflected light. By providing a light-shielding layer consisting of a non-transparent metal layer and a transparent insulating layer, it is possible to prevent light from directly hitting the light-receiving element from the back surface, resulting in an excellent signal-to-noise ratio and the possibility of miniaturization. Therefore, it has the advantage that it is not only useful as a facsimile sensor, but can also be used satisfactorily as a sensor for pattern recognition, mark league, etc.
第1図は、従来のファクシミリ等の送信原稿の読み取り
系の斜視図、第2図は、従来の犬形センサとオプテイ力
ルファイバなどの導光系を用いた読取り方式の斜視図、
第3図は、従来の密着読み取り方式の部分断面図、第4
図は、本発明の一実施例の部分断面図、第5図は、本発
明の他の実施例の部分断面図、第6図は、本発明の遮光
層の形状の1例を示す部分断面図および平面図である。
1……送信原稿、2……光源、3……レンズ、4……光
電変換装置、5……導光系、6……大形イメージセンサ
、7……透光性基板、8……受光素子、9……透明保護
層、10……照明光束、11……不透光性金属層、12
……透光性絶縁層。FIG. 1 is a perspective view of a conventional reading system for a transmission document such as a facsimile machine, and FIG. 2 is a perspective view of a conventional reading system using a dog-shaped sensor and a light guide system such as an optical fiber.
Figure 3 is a partial cross-sectional view of the conventional close reading method;
FIG. 5 is a partial cross-sectional view of another embodiment of the present invention, and FIG. 6 is a partial cross-sectional view showing an example of the shape of the light-shielding layer of the present invention. FIG. 2 is a diagram and a plan view. 1... Transmission original, 2... Light source, 3... Lens, 4... Photoelectric conversion device, 5... Light guiding system, 6... Large image sensor, 7... Transparent substrate, 8... Light receiving Element, 9... Transparent protective layer, 10... Illumination luminous flux, 11... Opaque metal layer, 12
...Translucent insulating layer.
Claims (1)
不透光層と、この不透光層を個別にまたは連続して覆う
透光性絶縁層を有し、前記不透光層に対応する透光性絶
縁層上にそれぞれ光電変換素子を形成し、前記透光性絶
縁基板の他方の面より光を照射し、前記一方の面に密着
して置かれた原稿を反射光によって読み取ることを特徴
とする光電変換装置。1 A light-transmitting insulating substrate has a plurality of or continuous non-transparent layers on one surface thereof, and a light-transmitting insulating layer covering the non-transparent layers individually or continuously, and the non-transparent layer has A photoelectric conversion element is formed on each corresponding light-transmitting insulating layer, light is irradiated from the other surface of the light-transmitting insulating substrate, and a document placed in close contact with the one surface is read by reflected light. A photoelectric conversion device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53147673A JPS5814073B2 (en) | 1978-11-29 | 1978-11-29 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53147673A JPS5814073B2 (en) | 1978-11-29 | 1978-11-29 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5574262A JPS5574262A (en) | 1980-06-04 |
| JPS5814073B2 true JPS5814073B2 (en) | 1983-03-17 |
Family
ID=15435682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53147673A Expired JPS5814073B2 (en) | 1978-11-29 | 1978-11-29 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814073B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4660095A (en) * | 1984-05-04 | 1987-04-21 | Energy Conversion Devices, Inc. | Contact-type document scanner and method |
| DE3789846T2 (en) * | 1986-10-07 | 1994-09-22 | Canon Kk | Image reading system. |
| US5097304A (en) * | 1986-10-07 | 1992-03-17 | Canon Kabushiki Kaisha | Image reading device with voltage biases |
| EP0310702B1 (en) * | 1987-10-09 | 1997-01-08 | Canon Kabushiki Kaisha | Method of operating photo-sensor units |
-
1978
- 1978-11-29 JP JP53147673A patent/JPS5814073B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5574262A (en) | 1980-06-04 |
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