JPS5816059A - Manufacture of al alloy plate for magnetic disc substrate - Google Patents
Manufacture of al alloy plate for magnetic disc substrateInfo
- Publication number
- JPS5816059A JPS5816059A JP56114170A JP11417081A JPS5816059A JP S5816059 A JPS5816059 A JP S5816059A JP 56114170 A JP56114170 A JP 56114170A JP 11417081 A JP11417081 A JP 11417081A JP S5816059 A JPS5816059 A JP S5816059A
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- JP
- Japan
- Prior art keywords
- alloy
- plate
- thickness
- precision
- cast
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Heat Treatment Of Nonferrous Metals Or Alloys (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、表面精度OIIい磁気ディスク用基盤の素材
となるAI基会合金板lIl造法進法するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is a method for manufacturing an AI-based metal plate which is a material for a magnetic disk substrate with a surface precision of OII.
従来から電子計算IIOI憶媒体として利用されてい為
磁気ディスクは、Aj基会合金板表面を切削加工して所
定の厚さにし、更に精密切削若しくは精密研磨して得ら
れる基alO表面に磁性体薄膜を塗布したものであ〕、
磁気ディスク用基盤には一般に次の様な特性が要求され
石。Magnetic disks, which have traditionally been used as electronic calculation IIOI storage media, are made by cutting the surface of an Aj-based metal plate to a predetermined thickness, and then applying precision cutting or precision polishing to form a magnetic thin film on the AlO-based surface. It is coated with
The following characteristics are generally required for magnetic disk substrates.
111精密研磨若しくは精密切削後の表面積度零良好で
あること、即ち基盤金体Oひずみや微小ウネν−bX′
&−こと。111 Good surface area after precision polishing or precision cutting, i.e. no distortion or minute undulations of the base metal body ν-bX'
&- thing.
(り一定厚の磁性体薄膜を形成す為うえで愚影響を及ぼ
す突起や穴等の表面欠陥がなく且つ小さいこと。tたた
とえ微細な欠陥であってもそれらが局部的に集中して−
ないこと。(In order to form a magnetic thin film with a constant thickness, there should be no surface defects such as protrusions or holes that would adversely affect the process. Even if the defects are minute, they may be concentrated locally.
There isn't.
131使用時の高速回転に充分耐え得る機械的強度を有
して偽ること。131 must have enough mechanical strength to withstand high-speed rotation when used.
14)非磁忰、軽量であること。14) Non-magnetic and lightweight.
(6)ある程度の耐食性及び耐熱性を有していること。(6) Possess a certain degree of corrosion resistance and heat resistance.
一方磁気ディスク基盤用として現在量も多用されている
のは6086合金でああが、近年磁気ディスクに対する
大容量化及び高記録密度化の要請は益々強くなって1ビ
ツト当ルの磁化領域は微小化されてお夛、且つ磁性体膜
の薄肉化及び磁気ヘッドの浮上高さの減少化も進んでい
る。しかし5086合金では、前記諸特性のうち表面精
度及び表面欠陥の点で高密度化に適合し得る様な基盤は
得られない。On the other hand, 6086 alloy is currently widely used for magnetic disk substrates, but in recent years the demand for larger capacities and higher recording densities for magnetic disks has become stronger, and the magnetization area per bit has become smaller. In addition, magnetic films have become thinner and the flying height of magnetic heads has also been reduced. However, the 5086 alloy does not provide a base suitable for high density in terms of surface precision and surface defects among the above-mentioned properties.
本発明者I!ifiは上記の様な状況のもとで、かねて
よ〕磁気ディスク基磐用Aj基台金O表面精度を高める
ぺ〈研究を進めてお)、前述の如き塗布タイプの磁気デ
ィスク基盤用Al基合金板としては一41的を満足する
製造法を確立し、先に特許出願を行なった(特願昭38
−116?及び特願昭611−71196)。しかしな
がら近年0磁気ディスク高密度化に対する要求は一段と
厳しさを増してシp、かかる要求に対熱する為、前1a
の如(精密切削又は精密研磨を行なった後6μm程度の
厚さで陽−酸化し、更に仕上げ研磨して陽極酸化層を一
μm程度とした後、その上に磁性体薄膜をスパッタする
処理法へ移行しククある。しかして陽wWI化を行なう
と、ディスタ基盤の表面硬化をAj基合金だけの場合よ
シも著しく高めゐことができ、研磨によって表面精度を
大幅に高め得るからである。Inventor I! Under the above-mentioned circumstances, ifi has been conducting research to improve the surface precision of Aj base metal O for magnetic disk substrates, and has developed an Al base for magnetic disk substrates of the above-mentioned coating type. For alloy plates, we established a manufacturing method that satisfies the 141 targets and filed a patent application (patent application filed in 1973).
-116? and patent application No. 611-71196). However, in recent years the demands for increasing the density of magnetic disks have become even more severe, and in order to meet these demands,
(a treatment method in which after precision cutting or precision polishing is performed, anodization is performed to a thickness of about 6 μm, and then final polishing is performed to make the anodized layer about 1 μm thick, and then a magnetic thin film is sputtered on top of the anodized layer) However, by using positive WWI, the surface hardening of the distal substrate can be significantly increased compared to the case of only Aj-based alloy, and the surface precision can be greatly improved by polishing.
即ち、A//合金を精密切削又は精密研磨した後A/基
合金上に磁性体薄膜を塗布する方式では。That is, the method involves precision cutting or precision polishing the A// alloy and then applying a magnetic thin film onto the A/ base alloy.
1111合金板の表面硬度は如何にしてもHY 社50
〜70s度(軟質材>IcLかならず1表面積度を高め
るにしても自ずと限界がある。これに対しAl基合金板
を精密切削又は精密研磨した後隅41m?化を行′&%
/に、再び仕上げ精密研磨を行なうと1表面硬度がHV
s、100以上と1に為為、A11&合金だけの場合に
比べて表面硬度を著しく高めゐことがで自為、この様K
A/基合全合金板して陽極酸化を施す方式は、磁気ディ
スクの高記録密度化の要請に答えるうえで極めて有効な
方式とぎ見る。The surface hardness of 1111 alloy plate is HY company 50
~70s degree (soft material > IcL) Even if you increase the surface area by 1, there is a limit naturally.For this, we precision cut or precision polish the Al-based alloy plate to make the rear corner 41 m?&%
/, when finishing precision polishing is performed again, the surface hardness becomes HV.
s, 100 or more, the surface hardness is significantly increased compared to the case of only A11 & alloy.
The method of applying anodization to an A/based all-alloy plate is considered to be an extremely effective method in meeting the demands for higher recording densities of magnetic disks.
本発明者等は上記O様な知晃を基に、陽極酸化方式の採
用によって卓越した表面精度を得ることができるA/基
会合金板開発を期して研究を進めえ、その結果、陽極酸
化方式を適用する為には。Based on the above-mentioned O-like knowledge, the present inventors have carried out research with the aim of developing an A/base alloy plate that can obtain excellent surface precision by adopting the anodic oxidation method. In order to apply.
以上に列挙すゐ橡な新たな問題を解決する必要があると
−う結論に達した。We have come to the conclusion that we need to solve the serious new problems listed above.
(1)強度向上の為にはMgを添加すゐ必要がある一I
N、AI−高Mg合金を急速凝固させると粒界忙β相(
A/gMgB)の偏析をみ為ことがある。鋳造時に形成
されるこのβ相は、単に精密切削又は精密研磨した後磁
性体膜を塗布するときには全く問題Ktkらない。しか
し陽極酸化を行なうと、β相が溶出して大欠陥となる為
、その様な陽極酸化皮膜を仕上げ精密研磨しても良好な
表面精度は得られない。(1) It is necessary to add Mg to improve strength.
When N, AI-high Mg alloy is rapidly solidified, grain boundary busy β phase (
A/gMgB) segregation may occur. This β phase formed during casting poses no problem when a magnetic film is simply applied after precision cutting or precision polishing. However, when anodic oxidation is performed, the β phase is eluted and becomes a large defect, so even if such an anodic oxide film is finished and precisely polished, good surface precision cannot be obtained.
1!1腸am化時にAI−(Fs、Mu、Cr)x系晶
出物の周囲が廖解するので、これらの晶出物が大きいと
仕上げ研磨後の表面精度が低下する。During the 1!1 atomization, the area around the AI-(Fs, Mu, Cr) x crystallized substances dissolves, so if these crystallized substances are large, the surface precision after final polishing will deteriorate.
(11陽極酸化等にMg2Si系の晶出物自体及びその
MFM−1IXfII解し、仕上げ研磨後の表面精度を
著しく低下させる。(11) Mg2Si-based crystallized substances themselves and their MFM-1IXfII occur during anodization, etc., and significantly reduce the surface precision after final polishing.
本発明は、陽極酸化方式の採用に伴なう上記の様な問題
を解消し1表面積度の優れ九磁気ディスク基盤用At基
合金板の製造法を確立すべく鋭意研究の結果完成された
ものであって、その構成は。The present invention was completed as a result of intensive research to solve the above-mentioned problems associated with the adoption of the anodization method and to establish a method for manufacturing At-based alloy plates for magnetic disk substrates with excellent surface area. And what is its composition?
合金元素としてMg : 10〜8.5gII(lfi
ll、 jJl下同じ)を必須的に含み、Tゑ:0.0
04〜00g優とl:0.0005〜0.0111を選
択的に含有するfiTh、Fs、Mn、Sゑ及びcrを
夫4 G、 11G以下に抑制したA/M合金廖湯を周
込て板厚が4〜1・■となる様に連続鋳造を行ah、*
*造板を600〜ago℃で1〜48時間焼鈍し先後。Mg as an alloying element: 10 to 8.5 g II (lfi
ll, jJl (same as below) is included, and T: 0.0
A/M alloy containing selectively 04~00g and l: 0.0005~0.0111 and suppressing fiTh, Fs, Mn, S and cr to 4G, 11G or less is included. Continuous casting is performed so that the plate thickness is 4 to 1・■, *
*The plate is annealed at 600~ago℃ for 1~48 hours.
80優以上の加工率で冷間圧延するか、或いは上記と同
様にして得た鋳造板を2611以上の加工率で冷間圧延
した4140 G−5it O’C”t”1〜4 J1
時間焼鈍し、I!KI011以上O加工率で冷間圧延す
為とζろに要Vが存在する。4140 G-5it O'C"t"1~4 J1 cold rolled at a working rate of 80 or more, or a cast plate obtained in the same manner as above and cold rolled at a working rate of 2611 or more.
Time annealing, I! There is a required V for cold rolling at a working rate of KI011 or higher and for ζ.
まず本発明で規定する合金元素について説明する。First, alloy elements defined in the present invention will be explained.
Mgはディスク用基盤に所定の横波的強度を与えるのに
不可欠O成分であ〕、少なくともg、on以上含有させ
なければなら1に%/’<I Lかし多すぎると鋳造時
にβ相が形成され品(な〕、ディスタ基舘を切削してW
h極瀞化を行なったときにβ相が過度Kn解してくぼみ
と1k〕、仕上げ研磨後の表面精度が著しく低下する。Mg is an indispensable O component that provides a specified transverse wave strength to the disk substrate.It must be contained at least in g,on or more. The formed product is cut by cutting the distal base.
When h-polishing is carried out, the β phase is excessively dissolved into Kn, resulting in depressions (1k), and the surface precision after final polishing is significantly reduced.
Mgが8.6鳴以下であれば鋳造時にβ相は殆んど形成
されず、万一形成されたとしても後述する焼鈍工程でM
lj6g拡散しβ相は消失する。即ちAt基合金中のM
g量が8.6参以下のものでは陽極酸化時にはβ相は存
在せず。If the Mg content is 8.6 or less, almost no β phase will be formed during casting, and even if it is formed, the Mg phase will be removed during the annealing process described later.
lj6g diffuses and the β phase disappears. That is, M in the At-based alloy
If the g amount is 8.6 or less, the β phase does not exist during anodization.
その後の仕上げ研磨で良好な表面精度を得ゐことができ
る。Good surface precision can be obtained by subsequent final polishing.
7i及びBは鋳造物の組織を微細化しミクロ偏析を防止
するOK有効な元素で、これらの効果を有効に発揮させ
る為にはTi:0.00411以上及びB:0.000
511以上を皐独或いは併用して添加することが望まれ
る。しかしT&零〇、OSm。7i and B are effective elements that refine the structure of castings and prevent micro-segregation, and in order to effectively exhibit these effects, Ti: 0.00411 or more and B: 0.000.
It is desirable to add 511 or more alone or in combination. However, T&0〇, OSm.
Bが0.01−を越えると、電気化学的吸着現象を応用
したフィルターによゐ廖湯遥過処ll1段階で過剰分が
殆んど除去されてしまうから、これ以上の添加は無駄で
ある。If B exceeds 0.01-, most of the excess will be removed in the first step of the filtration process using a filter that uses electrochemical adsorption, so it is wasteful to add any more. .
F@、Mn、Crは何れも鋳造時にムl −(re。F@, Mn, and Cr all have mul-(re) at the time of casting.
Mn、Cr)x系晶出物を形成し、ディスク基盤切削後
の電解酸化を行なう際に、晶出物の周囲が溶解し表面精
度を低下させる。従ってAt−(F・。When a Mn, Cr) x system crystallized substance is formed and electrolytic oxidation is performed after cutting the disk substrate, the surrounding area of the crystallized substance is dissolved and the surface precision is degraded. Therefore, At-(F.
Mn、Cr)X系晶出物の数及び大きさは響力減らす必
要があ〕、何れも0.1参以下としなければならない。The number and size of Mn, Cr)
S五はMgg8iの晶出物を形成し晶(、Mg281は
陽極酸化時にそれ自体が溶解すると同時に周囲も溶解し
1表面端度を低下させる。従って0.1嘔以下に抑える
必要がある。S5 forms a crystallized product of Mgg8i (Mg281 dissolves itself during anodic oxidation, and at the same time dissolves its surroundings, reducing the surface roughness. Therefore, it is necessary to suppress it to 0.1 or less.
f4.本発明で使用されるAtFiG9.811以上の
純度を有する4のであj、At中に不亙避的忙含まれる
Cu、Kn等は不純物量程度であるR9゜晶出物O粗大
化は認められず、また陽極酸化時の欠陥も認められず、
実害はない。f4. Since the AtFiG4 used in the present invention has a purity of 9.811 or higher, the amount of Cu, Kn, etc. that are inevitably contained in At is at the level of impurities. Also, no defects were observed during anodization.
There is no actual harm.
本発明では上記威分粗成のAt基合金を溶解した後、電
気化学的吸着現象を応用したフィVターを常法に従って
通過させて溶湯中の非金属介在物を除去し、更に連続鋳
造を行なうが、Ii的達成の為には連続鋳造工程で板厚
を4〜) OIIII#c Lなければならない。従来
の連続鋳造では厚さ−tIxso。In the present invention, after melting the above-mentioned At-based alloy, it is passed through a filter using an electrochemical adsorption phenomenon to remove nonmetallic inclusions in the molten metal, and then continuous casting is performed. However, in order to achieve the objective Ii, the plate thickness must be increased from 4 to 4) in the continuous casting process. In conventional continuous casting, the thickness -tIxso.
〜600鱈震度0スラブを得ゐのが通例である。It is customary to obtain a 0 slab of ~600 cod seismic intensity.
ところが本発明者等が実験によ〕確認した結果では、ス
リップ厚内であると急冷ボ困@にな〕、徐冷凝固段階で
晶出物−成長するから1合金組成を如何に調整してみて
も晶出物の大きさを2.6μ−以下に微細化することが
で亀ない、とζろが連続鋳造工程で板厚を10■以下に
設定すると、#造板が極めて急速に冷即される結果、晶
出物を著しく微細化できると同時に微細化元素OII加
効果とも相まって結晶粒を微細化することができる。ち
なみに従来の連続鋳造で得たスラブ厚″SがWOO〜6
00■薯度のものO晶出物中イズは約12■程度である
のに対し、厚さを10−以下に設定すると冷矧速度を1
0倍以上忙高めることができ。However, the results confirmed by the inventors through experiments show that if the thickness is within the slip thickness, rapid cooling will be difficult, and crystallized substances will grow during the slow cooling and solidification stage. As can be seen, it is possible to reduce the size of crystallized particles to 2.6μ or less, and when Zero sets the thickness of the plate to 10μ or less in the continuous casting process, the plate is cooled extremely rapidly. As a result, the crystallized substances can be made extremely fine, and at the same time, the crystal grains can be made fine in combination with the added effect of the finer element OII. By the way, the slab thickness "S" obtained by conventional continuous casting is WOO ~ 6
00■ The thickness of the O crystallized material is about 12■, but when the thickness is set to 10- or less, the cooling speed is 1.
You can become more busy than 0 times.
それに伴なって晶出物中イズはL6μ論以下に1にる。Correspondingly, the crystallized material has an IZ of 1, which is less than L6μ theory.
しか4微細化元素の添加効果と相まって結晶粒が微細化
する為、晶出物Oミクレ偏析も殆んど起らない。However, since the crystal grains become finer together with the effect of adding the four refining elements, almost no crystallized O microsegregation occurs.
従ってその後冷開圧延したAt基合金板は、!1iめて
微細な晶出物が絢−に分散した状部で得ることができ、
これを機械加工及び研磨加工しても。Therefore, the At-based alloy sheet that was cold-open rolled after that was ! For the first time, fine crystallized substances can be obtained in the form of finely dispersed particles,
Even if this is machined and polished.
粗大晶出物に起因すゐ凹凸やミクロ偏析に起因するさざ
波現象を生じる恐れがない。There is no risk of causing unevenness caused by coarse crystallized substances or ripples caused by micro-segregation.
賞上記の様な急速凝固法を採用する場合には。Award if a rapid coagulation method as mentioned above is adopted.
凝固組織中にβ相が形成されJRいが、これについては
前述の如<Mgの添加量を8.轟Ls臘下とすることで
解決可能であり、tた万一若干形成され九としても8.
5参以下であるならば1後述する焼鈍工程で消失させる
ことができる。まえ連続鋳造時に起こ〕がちなサーフェ
ス・ライシ唾バI−ν及び#造物との濶清むらに起因す
るマクロ組織の局部的むらは、以下に述べる焼鈍条件及
び冷閲圧延条件の組み合わせによって解消すること零で
きる。A β phase is formed in the solidified structure, but this can be solved by changing the amount of Mg added as described above. It can be solved by making Todoroki Ls 臘下, and even if it were to be formed a little, it would be 8.
If the amount is 5 or less, it can be eliminated by the annealing step described below. The local unevenness of the macrostructure caused by unevenness of surface and rice grains I-ν and # products, which tends to occur during continuous casting, can be eliminated by the combination of annealing conditions and cold rolling conditions described below. I can do it all.
崗通常osoo〜600■厚の鋳塊では5〜80−程度
の固剤を行なう為、上記2点・に起因する問題が生じて
も面側時に削〕取られてしまうので。Usually, ingots with a thickness of 5 to 80 mm are applied with a solidifying agent of about 5 to 80 mm, so even if problems caused by the above two points occur, they will be scraped off when facing the surface.
その後の圧蝿工程ではもはや全く問題にならない。There is no longer any problem in the subsequent pressing process.
しかし本発明の釦〈鋳造厚を4〜30mtCしたもので
は1固剤によって除去し得る表層厚さは極(僅かであシ
、固剤による間騙解決は期待することができず、何らか
O対策を講する必要がある。更にディスク基盤としての
加工々程中、軟質材とした後Kf?なう仕上研磨或いは
仕上切削時に、材料の結晶粒が粗大であったp不均一で
あると、仕上研磨或いは仕上切M*の表面精度が低下す
ふ傾向がみられる。これらの問題を未然に防止すゐ為に
は、軟質材としたときの結晶粒径を0.045so+以
下にする必要がある。However, in the case of the button of the present invention (with a casting thickness of 4 to 30 mtC), the surface layer thickness that can be removed with one solid agent is extremely small, and it cannot be expected that the solid agent will solve the problem. It is necessary to take countermeasures.Furthermore, during the processing process as a disk base, if the material is coarsely grained or non-uniform during final polishing or final cutting after it is made into a soft material, There is a tendency for the surface precision of finish polishing or finish cutting M* to decrease.In order to prevent these problems, it is necessary to reduce the crystal grain size to 0.045so+ or less when used as a soft material. be.
これらの要請に対しては以下に示す2つの方法によって
目的を達成することかでIIゐ。In response to these demands, the objectives can be achieved by the following two methods.
〔1〕前記4〜10■厚の鋳造板を300−1!56℃
で1〜48時間焼鈍し1次いで80憾以上の加工々程で
所定厚さ壇で冷間圧延する方法。[1] The above-mentioned 4-10cm thick cast plate was heated to 300-1!56℃
The method includes annealing for 1 to 48 hours, followed by cold rolling to a predetermined thickness for more than 80 working steps.
〔2〕前記4〜1(Ism厚の鋳造板を2b−以上の加
工率で冷間圧延した後、40G−650℃で1〜48時
間中間焼鈍し、更に80嚢以上O加工皐で所定厚さオで
冷間圧延する方法。[2] After cold rolling a cast plate having a thickness of 4 to 1 (Ism) at a processing rate of 2b- or more, intermediate annealing at 40G-650°C for 1 to 48 hours, and further O-processing the sheet to a predetermined thickness of 80 bags or more. A method of cold rolling with a steel rod.
上記〔1〕O方法においては、焼鈍蟲度が600℃未満
では微細析出物が析出し、鋳造時のマクロ組織の局部む
らを、無害化することができず、一方560℃を越える
と局部溶融が生じる。焼鈍時間は1〜48時間の範囲に
設定しなければならない。即ち1時間未満では上記局部
むらを、無害化することができず、一方48時間を輔え
てもそれ以上の効果は得られない、焼鈍後の加工率が高
い程再結晶粒は微細になシ、目標11膚の結晶粒径を確
保する為には加工率を80参以上にしなければならない
。In the above [1] O method, if the annealing degree is less than 600°C, fine precipitates will precipitate, and local unevenness in the macrostructure during casting cannot be made harmless, whereas if it exceeds 560°C, local melting will occur. occurs. The annealing time must be set in the range of 1 to 48 hours. In other words, the above-mentioned local unevenness cannot be rendered harmless if it is left for less than 1 hour, while no further effect can be obtained even if it is left for 48 hours.The higher the processing rate after annealing, the finer the recrystallized grains become. In order to achieve target 11 grain size, the processing rate must be 80 mm or higher.
★た上記〔2〕の方法によれば、焼鈍の前・後で冷閲圧
趣を行なうことによ〕焼鈍温度O低下が可能Klkる。According to the method [2] above, it is possible to lower the annealing temperature by performing cold compression before and after annealing.
即ち中間焼鈍O前に冷間圧延を行なうと中間焼鈍工程で
結晶粒が微細什し、マクロ組織の局部むらに起因する問
題が抑制される。但しこの様な効果を確保する為には加
工率を261℃以上にしなけれげなもず、これ未満の加
工率では目的を達成できない。中間焼鈍は〔1〕の方法
に比べて低温を採用することができるが、400℃未満
では微細析agIIIが多量析出して中間焼鈍時の再結
晶粒が粗大且つ不拘−虻な〕、マクロ組織の局部むらを
無害化しme<なゐほか、「冷間圧延+軟質化焼鈍」後
の再結晶粒が著しく粗大になる。一方中間焼鈍温度が6
60℃を越えると〔1〕の場合と同様局部j1M#生じ
る。中間焼鈍時間は1時間以上でなければ上記の効果が
有効に発揮されず、一方48時間を越えると再結晶粒が
粗大化し目標を達成でき1k(なる。また中間焼鈍後の
冷開加工量も大きいはど再結晶粒が微細になり、前記マ
クロ組織の局部むらを解消するt)K有効でああ。そし
てディスタ基盤用として十分な表面精度を確保すべく結
晶粒を0.045μm以下にする為には、このときの加
工率をson以上にしなければならない、従って〔2〕
の方法を実施する場合は鋳造板の板厚と最終製品の板厚
を考慮し、中間焼鈍0*後にかける冷間加工率が夫々上
記要件を満足す為櫓にしなければならない。That is, if cold rolling is performed before intermediate annealing, crystal grains become finer in the intermediate annealing step, and problems caused by local unevenness of the macrostructure are suppressed. However, in order to ensure such an effect, the processing rate must be set to 261° C. or higher, and if the processing rate is less than this, the objective cannot be achieved. Intermediate annealing can be performed at a lower temperature than in method [1], but if it is below 400°C, a large amount of fine precipitate agIII will precipitate, and the recrystallized grains during intermediate annealing will be coarse and unrestricted], resulting in a macrostructure. Besides, the recrystallized grains after "cold rolling + softening annealing" become significantly coarser. On the other hand, the intermediate annealing temperature is 6
When the temperature exceeds 60°C, local j1M# occurs as in the case [1]. If the intermediate annealing time is not longer than 1 hour, the above effect will not be effectively exhibited.On the other hand, if it exceeds 48 hours, the recrystallized grains will become coarse and the target will not be achieved (1k). t) K is effective because large recrystallized grains become fine and eliminate local unevenness in the macrostructure. In order to reduce the crystal grain size to 0.045 μm or less in order to ensure sufficient surface precision for use as a disk substrate, the processing rate must be greater than son. Therefore, [2]
When implementing the above method, the thickness of the cast plate and the thickness of the final product must be taken into consideration, and the cold working rate applied after intermediate annealing 0* must be adjusted to satisfy the above requirements.
この様に鋳造後の焼鈍及び冷開圧延条件を適正にコント
四−ルすることにょ〕、鋳造工程で生じ九ナーフェス・
ツイン・パターン及び1lflltr6に起因するマク
ロ組織の局部むらを無害化し、更には微量生成する可能
性のあるβ相も完全に消失畜せhaとがで自る。In this way, by appropriately controlling the annealing and cold-opening rolling conditions after casting, it is possible to prevent
The local unevenness of the macrostructure caused by the twin pattern and 1lflltr6 is rendered harmless, and furthermore, the β phase that may be produced in trace amounts is completely eliminated.
本発明は概略以上OII/I!に構成されてお〕、濡加
合金元雪の種類及び添加量、連続鋳造による最終板厚の
薄肉化を行なうことによって、マクロ組織を微細化し電
クロ偏析を激減すると共和β相の形成を防止し、1つ鋳
造後の焼鈍及び冷間圧延条件を設定することによってマ
クロ組織O局部むらを無害化す為ことに成功した。従っ
てζOIt基合金板を切削加工若しくは研磨加工しえ後
@lll1tII化をffない1次いで仕上げ研磨すゐ
ことにより表面精度の極めて高い磁気ディスク基盤をa
為とと−でき、磁気ディスクの高記録密度化0要請に応
え84ことになった。The present invention summarizes the above OII/I! The formation of the republican β phase is prevented by refining the macrostructure and drastically reducing electrochromic segregation by changing the type and amount of the wetting alloy source and by reducing the final plate thickness through continuous casting. However, by setting post-casting annealing and cold rolling conditions, we succeeded in rendering the local unevenness of the macrostructure O harmless. Therefore, after cutting or polishing the ζOIt-based alloy plate, the magnetic disk substrate with extremely high surface precision can be created by finishing polishing.
In response to the request for higher recording densities on magnetic disks, the company was able to achieve 84 results.
次に本発明の実施例を示す。Next, examples of the present invention will be shown.
実施例
第1表に示す組成AC本発明材)及びB(比較材)OA
7基合金廖湯を、常法に従って電気化学的吸着現象を応
用したフィルターで処理し、非金属介在物を除去した後
、6Jsg*の板厚に連続#造した。、尚、#重板の表
面結晶粒は1wk紬化剤の添加によって、0.06JS
smとなる様W:lll整した。これらの#重板を4.
!■厚オで冷開圧延し、450℃゛で4時間焼鈍を行な
った後、j!に2.2 m″壇で冷開圧延した。Compositions AC (inventive material) and B (comparative material) OA shown in Example Table 1
The 7-base alloy melt was treated with a filter using an electrochemical adsorption phenomenon according to a conventional method to remove nonmetallic inclusions, and then continuously molded into a plate with a thickness of 6 Jsg*. , Incidentally, the surface crystal grains of the # heavy plate were reduced to 0.06JS by adding 1wk pongeeing agent.
I arranged it so that it would be sm. 4. These #heavy boards.
! ■After cold open rolling with thick O and annealing at 450℃ for 4 hours, j! The material was cold-open rolled on a 2.2 m diameter plate.
この冷延材をディスク形伏に打抜き、!50’Cで2時
開歪取〕焼鈍を行なった後片面を0.INずつ粗切削し
、WIICIlISO”Cで2時間歪取)焼鈍をし九後
精密切削加工を行なつそ、この#I密切削加工面九対し
第2表に示す条件で6μm厚になるまで陽極酸化を行な
った。このときの表面硬度を第3表に示す。第8表から
も明らかな様Kllll化の表面硬度は、Al基合金の
11の場合の2倍程度となることが分かる。この結果、
陽極酸化皮膜の仕上研磨後の表面精度は、Al基合金の
精密切削若しくは精密研磨の場合よル著しく高めること
ができる。This cold-rolled material is punched into a disc shape! After annealing at 50'C with 2 o'clock opening strain relief] one side was 0. Roughly cut each IN, annealed for 2 hours to remove strain in WIICIlISO"C, and then precision cut. Then, the #I finely machined surface was anodized to a thickness of 6 μm under the conditions shown in Table 2. Oxidation was carried out.The surface hardness at this time is shown in Table 3.As is clear from Table 8, the surface hardness of the Kllll alloy is approximately twice that of the Al-based alloy No. 11. result,
The surface precision of the anodic oxide film after final polishing can be significantly improved compared to precision cutting or polishing of Al-based alloys.
第1表 表面硬度nv
上記で得た各陽極酸化膜を8μm厚★で仕上研磨して得
たディスクの磁気ヘッド浮上特性を第4表に示す。但し
試験条件#i回転数8100rpm、磁気ヘッド浮上高
さ0.2μmとした。Table 1 Surface Hardness nv Table 4 shows the magnetic head flying characteristics of the disks obtained by final polishing each of the anodic oxide films obtained above to a thickness of 8 μm. However, test conditions #i were a rotation speed of 8100 rpm and a magnetic head flying height of 0.2 μm.
尚、この試験#i、ディスク基盤金体のうねり。In this test #i, the waviness of the disk base metal body.
真直度、基盤の微少うね〕及び表面精度の全ての因子を
含めた特性試験である。tた参考★でに従来の6086
合金から得たディスク基s1の特性試験結果も併記した
。This is a characteristic test that includes all factors such as straightness, minute ridges on the base] and surface accuracy. For reference★In the conventional 6086
Characteristic test results of the disk base s1 obtained from the alloy are also listed.
第4褒からも明らかな如く、従来の5086合会でFi
粗大(167*m以上)な晶出物ゴあシ、この晶出物が
0.2μm11度以上の突起となっているため、磁気ヘ
ッドは0.2μmの高さでは安定浮上し傷ない、これに
対しB組成(比較例)及びA組成(本発明品)の−〇で
は、晶出物がtt、!Spm以下となっているためこれ
に起因する突起が小さくヘッドの安定浮上が可能である
。但し第6表に示す如<、BM成(比較例)では、β相
の溶出による大欠陥に起因して記録のエラーが多く、磁
気ディスクとしての信頼性に大行る。即ち、陽tIs階
化を施す工科を含む磁気ディスク基盤用の素材としてけ
、優れた性能を確保する為には本実明忙規定する要件を
満たすことが不可欠である。As is clear from the 4th award, Fi
Coarse crystallized material (167*m or more) has a protrusion of 0.2 μm and 11 degrees or more, so the magnetic head can fly stably at a height of 0.2 μm without any damage. On the other hand, in composition B (comparative example) and composition A (product of the present invention) -〇, the crystallized substances were tt,! Spm or less, the protrusions caused by this are small and the head can fly stably. However, as shown in Table 6, in the BM composition (comparative example), there were many recording errors due to large defects due to the elution of the β phase, which seriously affected the reliability of the magnetic disk. That is, in order to ensure excellent performance when used as a material for magnetic disk substrates, including those that undergo positive tIs layering, it is essential to meet the requirements stipulated herein.
■ 出願人 株式会社神戸卿鋼所■ Applicant: Kobe Steel Works Co., Ltd.
Claims (1)
憾。 以下同じ)を必須的に含み、Ti:0.004〜0.0
8 嗟J−B : L6410 !S−0,0111を
選択的[含有するほか、F@、Mn、8i及びQrを夫
々lI℃で1〜48時間焼鈍した後、SO優以上の加工
率で冷間圧延することを特徴とする。陽極酸化して用い
ゐ磁気ディスタ基盤用At基合金板の製造法。 (11合金元素としてMg : 10〜J1.lS1g
(重量憾。 以下同じ)を必須的に含み、Ti: 0.064〜0.
08−とB:O,0OOI&〜0.01−を選択的に含
有すAtto、 F e 、Mu 、 S i及び(r
を夫々0.111以下に抑制したAj基台会躊湯を用−
て板厚が4〜10mとなる様に連続鋳造を行1にい、該
鋳造板を21優以上の加工率で冷間圧延した後、40・
〜ago℃でl 〜48時間焼鈍し、llK80mIt
上O゛加工率で冷間圧延す為ことを特徴とす為、陽極酸
化して用いる磁気ディスク1鍍用At合金板の製造法。(1) Essentially contains Mg: 10 to 8.6 tatami (heavy) as alloying elements, Ti: 0.004 to 0.0
8 J-B: L6410! In addition to selectively containing S-0,0111, F@, Mn, 8i and Qr are each annealed at lI°C for 1 to 48 hours, and then cold rolled at a processing rate of SO excellent or higher. . A method for producing an At-based alloy plate for a magnetic disk substrate, which is used by anodizing. (Mg as 11 alloying element: 10~J1.lS1g
(Heavy weight. The same applies hereinafter), Ti: 0.064 to 0.
08- and B: Atto, Fe, Mu, Si and (r
Using Aj base water bath which suppresses each to 0.111 or less.
Continuous casting was carried out in row 1 so that the plate thickness was 4 to 10 m, and the cast plate was cold rolled at a processing rate of 21 or more.
Annealed at ~ago℃ for ~48 hours, llK80mIt
A method for producing an At alloy plate for one-layer magnetic disk, which is characterized by cold rolling at a processing rate of O゛ and is anodized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56114170A JPS5816059A (en) | 1981-07-20 | 1981-07-20 | Manufacture of al alloy plate for magnetic disc substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56114170A JPS5816059A (en) | 1981-07-20 | 1981-07-20 | Manufacture of al alloy plate for magnetic disc substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5816059A true JPS5816059A (en) | 1983-01-29 |
| JPS6154105B2 JPS6154105B2 (en) | 1986-11-20 |
Family
ID=14630919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56114170A Granted JPS5816059A (en) | 1981-07-20 | 1981-07-20 | Manufacture of al alloy plate for magnetic disc substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5816059A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5989748A (en) * | 1982-11-12 | 1984-05-24 | Sumitomo Alum Smelt Co Ltd | Aluminum substrate for magnetic disk |
| JPS60110852A (en) * | 1983-11-21 | 1985-06-17 | Mitsubishi Electric Corp | Heat treatment of disk for magnetic disk |
| JPS6119754A (en) * | 1984-07-05 | 1986-01-28 | Sukai Alum Kk | Al-base alloy plate for magnetic disc |
| JPS6362853A (en) * | 1986-09-02 | 1988-03-19 | Kobe Steel Ltd | Manufacture of material for magnetic disk substrate |
| JPS6396254A (en) * | 1986-10-14 | 1988-04-27 | Sumitomo Light Metal Ind Ltd | Production of al alloy substrate for coated magnetic disk |
| JPS63216953A (en) * | 1987-03-05 | 1988-09-09 | Sumitomo Light Metal Ind Ltd | Production of al alloyed substrate for magnetic disk |
| JPH02170928A (en) * | 1988-12-22 | 1990-07-02 | Furukawa Alum Co Ltd | Manufacture of aluminum alloy for magnetic disk substrate |
-
1981
- 1981-07-20 JP JP56114170A patent/JPS5816059A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5989748A (en) * | 1982-11-12 | 1984-05-24 | Sumitomo Alum Smelt Co Ltd | Aluminum substrate for magnetic disk |
| JPS60110852A (en) * | 1983-11-21 | 1985-06-17 | Mitsubishi Electric Corp | Heat treatment of disk for magnetic disk |
| JPS6119754A (en) * | 1984-07-05 | 1986-01-28 | Sukai Alum Kk | Al-base alloy plate for magnetic disc |
| JPS6362853A (en) * | 1986-09-02 | 1988-03-19 | Kobe Steel Ltd | Manufacture of material for magnetic disk substrate |
| JPS6396254A (en) * | 1986-10-14 | 1988-04-27 | Sumitomo Light Metal Ind Ltd | Production of al alloy substrate for coated magnetic disk |
| JPS63216953A (en) * | 1987-03-05 | 1988-09-09 | Sumitomo Light Metal Ind Ltd | Production of al alloyed substrate for magnetic disk |
| JPH02170928A (en) * | 1988-12-22 | 1990-07-02 | Furukawa Alum Co Ltd | Manufacture of aluminum alloy for magnetic disk substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6154105B2 (en) | 1986-11-20 |
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