JPS58164229A - 半導体基板処理法 - Google Patents

半導体基板処理法

Info

Publication number
JPS58164229A
JPS58164229A JP57048014A JP4801482A JPS58164229A JP S58164229 A JPS58164229 A JP S58164229A JP 57048014 A JP57048014 A JP 57048014A JP 4801482 A JP4801482 A JP 4801482A JP S58164229 A JPS58164229 A JP S58164229A
Authority
JP
Japan
Prior art keywords
hydrazine
defect
heat treatment
semiconductor substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57048014A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0568099B2 (de
Inventor
Takanori Hayafuji
早藤　貴範
Sachiko Nakazawa
中沢　幸子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP57048014A priority Critical patent/JPS58164229A/ja
Publication of JPS58164229A publication Critical patent/JPS58164229A/ja
Publication of JPH0568099B2 publication Critical patent/JPH0568099B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
JP57048014A 1982-03-25 1982-03-25 半導体基板処理法 Granted JPS58164229A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57048014A JPS58164229A (ja) 1982-03-25 1982-03-25 半導体基板処理法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57048014A JPS58164229A (ja) 1982-03-25 1982-03-25 半導体基板処理法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6193607A Division JP2601208B2 (ja) 1994-07-26 1994-07-26 半導体基体の処理方法

Publications (2)

Publication Number Publication Date
JPS58164229A true JPS58164229A (ja) 1983-09-29
JPH0568099B2 JPH0568099B2 (de) 1993-09-28

Family

ID=12791447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57048014A Granted JPS58164229A (ja) 1982-03-25 1982-03-25 半導体基板処理法

Country Status (1)

Country Link
JP (1) JPS58164229A (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62123098A (ja) * 1985-11-22 1987-06-04 Toshiba Ceramics Co Ltd シリコン単結晶の製造方法
JP2002334848A (ja) * 2001-05-09 2002-11-22 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの熱処理装置
JP2003031582A (ja) * 2000-11-28 2003-01-31 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの製造方法及びシリコンウェーハ
JP2003124220A (ja) * 2001-10-10 2003-04-25 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの製造方法及びシリコンウェーハ
JP2009170940A (ja) * 2009-04-30 2009-07-30 Sumco Corp 半導体ウェーハの製造方法及び半導体ウェーハ
JP2009212537A (ja) * 2000-11-28 2009-09-17 Sumco Corp シリコンウェーハの製造方法及びシリコンウェーハ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712524A (en) * 1980-06-26 1982-01-22 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712524A (en) * 1980-06-26 1982-01-22 Fujitsu Ltd Manufacture of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62123098A (ja) * 1985-11-22 1987-06-04 Toshiba Ceramics Co Ltd シリコン単結晶の製造方法
JP2003031582A (ja) * 2000-11-28 2003-01-31 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの製造方法及びシリコンウェーハ
JP2009212537A (ja) * 2000-11-28 2009-09-17 Sumco Corp シリコンウェーハの製造方法及びシリコンウェーハ
US7670965B2 (en) 2000-11-28 2010-03-02 Sumitomo Mitsubishi Silicon Corporation Production method for silicon wafers and silicon wafer
JP2002334848A (ja) * 2001-05-09 2002-11-22 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの熱処理装置
JP2003124220A (ja) * 2001-10-10 2003-04-25 Sumitomo Mitsubishi Silicon Corp シリコンウェーハの製造方法及びシリコンウェーハ
JP2009170940A (ja) * 2009-04-30 2009-07-30 Sumco Corp 半導体ウェーハの製造方法及び半導体ウェーハ

Also Published As

Publication number Publication date
JPH0568099B2 (de) 1993-09-28

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