JPS58165212A - 透明導電膜の形成方法 - Google Patents

透明導電膜の形成方法

Info

Publication number
JPS58165212A
JPS58165212A JP4738782A JP4738782A JPS58165212A JP S58165212 A JPS58165212 A JP S58165212A JP 4738782 A JP4738782 A JP 4738782A JP 4738782 A JP4738782 A JP 4738782A JP S58165212 A JPS58165212 A JP S58165212A
Authority
JP
Japan
Prior art keywords
transparent conductive
conductive film
forming
sputtering
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4738782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0338681B2 (2
Inventor
英夫 田辺
熊田 政治
砂原 和雄
三角 明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4738782A priority Critical patent/JPS58165212A/ja
Publication of JPS58165212A publication Critical patent/JPS58165212A/ja
Publication of JPH0338681B2 publication Critical patent/JPH0338681B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Manufacturing Of Electric Cables (AREA)
JP4738782A 1982-03-26 1982-03-26 透明導電膜の形成方法 Granted JPS58165212A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4738782A JPS58165212A (ja) 1982-03-26 1982-03-26 透明導電膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4738782A JPS58165212A (ja) 1982-03-26 1982-03-26 透明導電膜の形成方法

Publications (2)

Publication Number Publication Date
JPS58165212A true JPS58165212A (ja) 1983-09-30
JPH0338681B2 JPH0338681B2 (2) 1991-06-11

Family

ID=12773689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4738782A Granted JPS58165212A (ja) 1982-03-26 1982-03-26 透明導電膜の形成方法

Country Status (1)

Country Link
JP (1) JPS58165212A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02163363A (ja) * 1988-03-09 1990-06-22 Ulvac Corp 透明導電膜の製造方法
JP2013001991A (ja) * 2011-06-21 2013-01-07 Ulvac Japan Ltd 成膜方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5448394B2 (ja) 2008-08-27 2014-03-19 三菱重工業株式会社 圧縮機の安全弁
JP5201248B2 (ja) 2011-03-31 2013-06-05 株式会社豊田自動織機 圧縮機の安全弁

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02163363A (ja) * 1988-03-09 1990-06-22 Ulvac Corp 透明導電膜の製造方法
JP2013001991A (ja) * 2011-06-21 2013-01-07 Ulvac Japan Ltd 成膜方法

Also Published As

Publication number Publication date
JPH0338681B2 (2) 1991-06-11

Similar Documents

Publication Publication Date Title
JPS58165212A (ja) 透明導電膜の形成方法
JPS5897203A (ja) 透明導電膜の形成方法
EP0763861B1 (en) Nonlinear mim device, production thereof and liquid crystal display device
JPS56100451A (en) Manufacture of electrode of semiconductor device
JPS5992998A (ja) 分子線結晶成長方法
JPS61176010A (ja) 透明導電膜の製造方法
Ottaway et al. Communication. Determination of volatile elements by carbon furnance atomic-emission spectrometry
JPH04296015A (ja) 半導体装置の製造方法
JP2558072B2 (ja) 液晶セル基板の表面処理方法
JPS63128717A (ja) プラズマ処理装置
JPS62180070A (ja) スパツタリング装置
Arnau et al. Studies on Hydrogen–Oxygen Systems in the Electrical Discharge. VI. Detection by Laser Raman Spectroscopy of O2 and O3 Trapped at 80° K
HUO et al. 44‐4: Optimize the One Drop Filling (ODF) operation process for Ferroelectric Liquid Crystal
JPS6164009A (ja) 透明導電膜の製造方法
KR0141909B1 (ko) 액정 표시 디바이스 제조 방법
JPH01132767A (ja) 薄膜形成方法および薄膜形成装置
JPH05156439A (ja) 透明導電膜の製造方法及び測定装置
Levenson et al. Surface roughness of aluminum thin films deposited by effusive and ionized cluster beams
Shirokov et al. The influence of high-frequency discharge on substrate temperature during film deposition
JPH04239742A (ja) 半導体装置製造における膜厚測定方法
Carpenter Stress in dielectric films
Simmons Conduction processes in dielectric films
Green Lorenz electron microscopy: magnetic imaging in the electron microscope
JPS62256311A (ja) 透明導電膜の製造方法
JPS61217576A (ja) タングステン薄膜の形成方法