JPS58167766A - 化学蒸着装置 - Google Patents

化学蒸着装置

Info

Publication number
JPS58167766A
JPS58167766A JP5197182A JP5197182A JPS58167766A JP S58167766 A JPS58167766 A JP S58167766A JP 5197182 A JP5197182 A JP 5197182A JP 5197182 A JP5197182 A JP 5197182A JP S58167766 A JPS58167766 A JP S58167766A
Authority
JP
Japan
Prior art keywords
section
gas
vapor deposition
chemical vapor
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5197182A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6128031B2 (2
Inventor
Yutaka Hayashi
豊 林
Mitsuyuki Yamanaka
光之 山中
Kenichi Ishii
賢一 石井
Hiroaki Yoshihara
吉原　弘章
Haruyuki Kawachi
河内　治之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP5197182A priority Critical patent/JPS58167766A/ja
Publication of JPS58167766A publication Critical patent/JPS58167766A/ja
Publication of JPS6128031B2 publication Critical patent/JPS6128031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP5197182A 1982-03-30 1982-03-30 化学蒸着装置 Granted JPS58167766A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5197182A JPS58167766A (ja) 1982-03-30 1982-03-30 化学蒸着装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5197182A JPS58167766A (ja) 1982-03-30 1982-03-30 化学蒸着装置

Publications (2)

Publication Number Publication Date
JPS58167766A true JPS58167766A (ja) 1983-10-04
JPS6128031B2 JPS6128031B2 (2) 1986-06-28

Family

ID=12901751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5197182A Granted JPS58167766A (ja) 1982-03-30 1982-03-30 化学蒸着装置

Country Status (1)

Country Link
JP (1) JPS58167766A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970314A (en) * 1996-03-25 1999-10-19 Sumitomo Electric Industries, Ltd. Process for vapor phase epitaxy of compound semiconductor
JPWO2013151045A1 (ja) * 2012-04-03 2015-12-17 国立研究開発法人物質・材料研究機構 結晶成長方法および結晶成長装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
THIN SOLID FILMS=1977 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970314A (en) * 1996-03-25 1999-10-19 Sumitomo Electric Industries, Ltd. Process for vapor phase epitaxy of compound semiconductor
JPWO2013151045A1 (ja) * 2012-04-03 2015-12-17 国立研究開発法人物質・材料研究機構 結晶成長方法および結晶成長装置

Also Published As

Publication number Publication date
JPS6128031B2 (2) 1986-06-28

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