JPS58199529A - Plasma etching device - Google Patents

Abstract

PURPOSE:To prevent leakage or production of dusts by forming a plasma atmosphere in a treating container and a plasma resistance protective film on a sealing material for sealing it from the atmospheric air, thereby increasing the lifetime of the sealing material. CONSTITUTION:An O-ring 2 for sealing is formed by adhering a plasma resistant thin metal film 2B on a sealing material 2A made of nonconductive material. After a semiconductor wafer 6 is placed on an electrode 5, the prescribed plasma generating gas is introduced through an exhaust pipe 9 to a bell-jar 3. When a high frequency is applied from a high frequency power source 8 between the electrodes 5 and 7 in this state, a gas plasma is generated in the bell-jar 3, thereby plasma etching the wafer 6 as desired. Since the film 2B is not eroded by the plasma, it can prevent the ring 2 from deteriorating due to the plasma, decreasing in sealability and dusts from producing, thereby largely increasing the lifetime of the ring 2.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a plasma etching apparatus that uses plasma to perform I-etching on a workpiece.

Conventionally, for example, when machining a thin film or thick film on a semiconductor wafer in the process of manufacturing semiconductor devices, an O-
using a ring.

However, since these rigid O-rings are generally made of non-conductive materials such as rubber or soft plastics, plasma can cause deterioration and hardening over time. As a result, the performance of the O-ring deteriorates and is damaged, causing problems such as leakage and dust generation.

Therefore, an object of the present invention is to prevent the sealing material of a plasma etching apparatus from being altered by plasma, extend the life of the sealing material, and prevent IJ-etching and dust generation.

To achieve this objective, the present invention forms a plasma-resistant protective film on the sealing material that blocks the plasma atmosphere inside the processing container from the outside air, thereby preventing the sealing material from being altered by plasma. .

Hereinafter, the present invention will be explained in detail according to an embodiment shown in the drawings.

FIG. 1 is a schematic sectional view showing an embodiment of a plasma etching apparatus according to the present invention, and FIG. 2 is an enlarged partial sectional view of the main parts thereof.

In this embodiment, there is a 0-I for sealing on the pedestal 1.
A bell jar 3 made of ℃ quartz is placed through the J tongue, and the O
- The ring 2 is formed to keep the inside of the bell jar 3 in a vacuum. A case 4 is provided at the bottom of the pedestal 1, and an electrode 5 passes through the case 4 approximately at its center. Electrode 5
A semiconductor wafer 6, which is a workpiece to be subjected to plasma etching, is placed on top of the CT. Above the semiconductor wafer 6 in the bell jar 3, another electrode 7 is provided. 5 is connected to a high frequency power source 8.

An exhaust pipe 9 for evacuating the interior of the bell jar 3 is connected to the pedestal 1. - A gas supply pipe 10 for supplying gas for plasma generation into the bell jar 3 is connected to the upper center of the bell jar 3.

In this embodiment, as shown in FIG. 2, the U-IJ ring 2 has a plasma-resistant metal thin film 2 on top of two sealing materials made of non-conductive material such as rubber or soft plastic.
B is deposited, for example, by sputtering or vapor deposition. The metal thin film 2B is made of, for example, aluminum (
A/), copper (Ou).

It is made of gold (Au), platinum (Pt), etc., and its film thickness is, for example, about 30 to 100 nm, so it can easily follow the changes in the shape of the two sealing materials of the O-ring 2.
- The sealing performance of the ring 2 itself is not reduced. Metal thin film 2
The material of B is the type of gas for plasma generation, for example, OF
4, Nt, OOla -OHt 01 t, but in any case, it is not attacked by plasma, so it is possible to prevent deterioration of sealing performance due to deterioration, generation of dust, etc.

Next, the operation of this embodiment will be explained. After placing the semiconductor wafer 6 on the electrode 5, the inside of the bell jar 3 is made into a vacuum state through the exhaust gas t9, and the bell jar 3 is discharged from the gas supply pipe 10.
A desired plasma generating gas is introduced into the chamber.

When high frequency waves are applied from the high frequency power source 8 between the electrodes 5 and 7 in this state, gas plasma is generated within the bell jar 3, and the semiconductor wafer 6 can be subjected to a desired plasma etching process using this plasma.

In this case, the inner surface of the belljar of the O-ring 2 is also exposed to the plasma.
7ri 2 (7) Metal thin film 2 on the surface side of the 2 sealing materials.
Since this metal thin film 2B is not attacked by plasma, it is possible to prevent deterioration of the O-ring 2, deterioration of sealing performance, and generation of dust due to plasma.
The lifespan of 0-IJ songs will be greatly extended. As a result, 0-
It is possible to prevent a decrease in yield due to growth from ring 2.

In the above embodiment, the metal thin film 2B was formed as a protective film on the sealing material 2 of the O-ring 2, but the protective film may be formed of other plasma-resistant material such as glass instead of metal. .

As explained above, according to the present invention, since a plasma-resistant protective film is formed on the surface of the sealing material that blocks the plasma atmosphere inside the processing container from the outside air, the plasma-resistant protective film is formed on the surface of the sealing material. This prevents deterioration of sealing performance and generation of dust, and extends the life of the sealing material.

[Brief explanation of the drawing]

FIG. 1 is a schematic sectional view showing an embodiment of a plasma etching apparatus according to the present invention, and FIG. 2 is an enlarged partial sectional view of the main parts thereof. l... Frame, 2... O-ring, 2 people... Seal material, 2B... Metal thin film, 3... Belljar, 4...
・Case, 5... Electrode, 6... Semiconductor wafer, 7.
...Electrode, 8...High frequency power supply, 9...Exhaust pipe, 10
...Gas supply pipe.

Claims (1)

[Claims] 1. In a plasma etching device that etches a workpiece using plasma, a plasma-resistant protective film is provided on the surface of a sealing material that blocks the plasma atmosphere inside the processing container from the outside air. A plasma etching device characterized by the following: 2. The plasma etching apparatus according to claim 1, wherein the protective film is a metal thin film formed by sputtering or vapor deposition.