JPS5826014A - Formation of silicon nitride film - Google Patents
Formation of silicon nitride filmInfo
- Publication number
- JPS5826014A JPS5826014A JP11919481A JP11919481A JPS5826014A JP S5826014 A JPS5826014 A JP S5826014A JP 11919481 A JP11919481 A JP 11919481A JP 11919481 A JP11919481 A JP 11919481A JP S5826014 A JPS5826014 A JP S5826014A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride film
- gaseous
- film
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 230000015572 biosynthetic process Effects 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims description 8
- 229910021478 group 5 element Inorganic materials 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract description 20
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000009792 diffusion process Methods 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 239000012159 carrier gas Substances 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、特にｌ−Ｖ族化合物半導体を用いた半導体素
子を製造する際に用いるシリコン窒化膜の形成方法の改
良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention particularly relates to an improvement in a method for forming a silicon nitride film used in manufacturing a semiconductor device using a l-V group compound semiconductor.
ＱａＡｓ 、 λｌＧａＡｓ 、ＧａＡｓＰ
、ＩｎＰ 、 ＩｎＧａＡｓ 。QaAs, λlGaAs, GaAsP
, InP, InGaAs.
Ｉｎ（）ａλ＄Ｐ等の１−ｖ族化合物半導体を材料とす
る発光ダイオード、レーザダイオード、ホトダイオード
またはトランジスタやショットキダイオードあるいはこ
れらを集積したＩＣ等の半導体素子の近年の発展社目覚
しいものがある。There have been remarkable developments in recent years in semiconductor devices such as light emitting diodes, laser diodes, photodiodes, transistors, Schottky diodes, and ICs integrating these, which are made from 1-V group compound semiconductors such as In()aλ$P.
ところで、これらの素子を製造する工程には、選択拡散
工程が含まれている場合が多い。この選択拡散工程は、
殆んど全てＺｎやＣｄ郷のＰ形不純物を拡散するもので
ある。一般にこの選択拡散マスクとしてはシリコン酸化
膜（８ｉ０ｘ膜）があるが、８３０ｇ膜は透膜拡散する
などマスク材として適さない為、シリコン窒化ｇ （８
ｉ、Ｎ、膜）が用いられる。Incidentally, the process of manufacturing these elements often includes a selective diffusion process. This selective diffusion process is
Almost all of them diffuse P-type impurities such as Zn and Cd. Generally, a silicon oxide film (8i0x film) is used as this selective diffusion mask, but the 830g film is not suitable as a mask material because it diffuses through the membrane, so silicon nitride film (8i0x film) is not suitable as a mask material.
i, N, membrane) are used.
ところがこのシリコン窒化膜は、良質な膜を得るには６
５０℃〜８００℃と、璽−Ｖ族化合物にとっては不利な
高温で成膜しなければならない。何故不利かと言えば、
Ｉ−Ｖ族化合物半導体は、それを構成するＶ族元素の蒸
気圧が高く、高温では分解蒸発するからである。この分
解のため、著しい場合には、残った夏族元索が微細な粒
状になり、成膜されたシリコン窒化１［Ｋピンホールを
発生させ。However, in order to obtain a good quality silicon nitride film, it takes 6
The film must be formed at a high temperature of 50° C. to 800° C., which is disadvantageous for A-V group compounds. As for why it's disadvantageous,
This is because the group V element constituting the IV group compound semiconductor has a high vapor pressure and decomposes and evaporates at high temperatures. Due to this decomposition, in severe cases, the remaining Xia yuanxo becomes fine particles, causing pinholes to form in the silicon nitride film.
選択拡散マスクとして作用しなくしてしまう。This makes it ineffective as a selective diffusion mask.
例えばＩｎＰ結晶では６５０℃に１０分間保つだけで、
顕微鏡で観察可能なピンホールが多数生成される。For example, with InP crystal, just keeping it at 650℃ for 10 minutes
Many pinholes are generated that can be observed with a microscope.
８００℃では、表面にＩｎの溜りが肉眼でも観察できる
程度に生成される。At 800° C., accumulations of In are generated on the surface to such an extent that they can be observed with the naked eye.
この様な事情から、従来は、６５０℃〜６６０℃でシリ
コン窒化膜を成膜していたが、８００℃以上の高温拡散
や１０時間以上の長時間拡散では、一部分透膜拡散現象
が起ったり、轟初発見できなかったピンホールから拡散
する等の不都合な現象が多く見られ、素子製造少滴りの
低下や特性の低下が見られていた。Due to these circumstances, silicon nitride films were conventionally formed at 650°C to 660°C, but when diffusion is carried out at high temperatures of 800°C or higher or for long periods of time of 10 hours or more, a partial membrane diffusion phenomenon occurs. Many inconvenient phenomena were observed, such as diffusion through pinholes that Todoroki had not been able to discover at first, and a decrease in the amount of droplets produced in device manufacturing and a decrease in characteristics were observed.
本発明はこのような点に鑑みてなされたものでｐ等のｖ
族元素な含むガスを流しつつシリコン窒化膜を形成する
ととＫよシ、ピンホールもなく一様で、透膜現象も起ら
ない良質なシリコン窒化膜を得ることができる方法を提
供するものである。The present invention has been made in view of the above points, and v of p etc.
By forming a silicon nitride film while flowing a gas containing group elements, the present invention provides a method for obtaining a high-quality silicon nitride film that is uniform with no pinholes and does not cause any film permeation phenomenon. be.
本発明の一実施例として、Ｉｎｐ結晶上へシリコン窒化
膜を形成する工程と、その有効性を示す例として、ｚｎ
の拡散について以下に１１ｉ！明する。As an example of the present invention, a process of forming a silicon nitride film on an Inp crystal and an example of its effectiveness will be described.
Regarding the spread of 11i! I will clarify.
まずＩｎＰ結晶の表面をエツチング等の処理によシ清浄
にし、石英製台に載置して、成膜装置へ挿入する。First, the surface of the InP crystal is cleaned by a process such as etching, placed on a quartz stand, and inserted into a film forming apparatus.
次に、昇温前に、キャリヤガス（Ｎｔ ）に対し約４０
ｐｐｍのＰＨ５（ホスフィン）ガスをＶ族元素を含むガ
スとして流し、雰囲気中にＰＨｓガスとＮ、ガスを満た
してＯｘガスを排除する。Next, before heating up, the carrier gas (Nt) is
ppm of PH5 (phosphine) gas is flowed as a gas containing group V elements, and the atmosphere is filled with PHs gas, N, and gas, and Ox gas is eliminated.
次いで、所定の温度（ここでは６５０℃）に昇温し、反
応部の温度が定常状態になってから、シリコン窒化膜の
成膜に必要な濃度にＮＨ，ガスどＳｉＨ。Next, the temperature is raised to a predetermined temperature (here, 650° C.), and after the temperature of the reaction section reaches a steady state, NH, SiH gas, etc. are added to the concentration required for forming a silicon nitride film.
ガスを導入する。この成膜中も上記ＰＨ，ガスを流し続
ける。すると、１０〜２０分で所望の厚さにシリコン窒
化膜が成膜できる。Introduce gas. During this film formation, the above PH and gas continue to flow. Then, a silicon nitride film can be formed to a desired thickness in 10 to 20 minutes.
成膜終了後、Ｎｔガスを流してＮＨ，ガス、ＳｉＨ４ガ
ス、 ＰＨ，ガスを追い出し、充分冷却してから取り出
す。After the film formation is completed, Nt gas is flowed to drive out NH gas, SiH4 gas, PH gas, and the film is cooled sufficiently before being taken out.
通常の写真製版工程を経て、このシリコン窒化膜を所望
の形状にエツチングする等以後は、通常の工程を踏めば
よい。After the silicon nitride film is etched into a desired shape through an ordinary photolithography process, ordinary steps can be carried out.
このようにして形成されたＰを添加したシリコン窒化膜
を拡散マスクとしてｋを拡散した。７００℃とＳＯＯ℃
で拡散したが、透膜現象のない良質な拡散ができた。Using the P-doped silicon nitride film thus formed as a diffusion mask, k was diffused. 700℃ and SOO℃
However, good quality diffusion was achieved without any membrane permeability phenomenon.
シリコン窒化膜は通常Ｓｉ、Ｎ、となっているが。The silicon nitride film is usually made of Si or N.
この発明方法によってＰを添加することにより、ＮがＰ
Ｋ一部置換して強固な結合となっているものと推定され
る。By adding P according to the method of this invention, N becomes P
It is presumed that K is partially substituted, resulting in a strong bond.
上記実施例では、ＩｎＰ結晶上に成膜する際にＰＨ，ガ
スを導入したが、高温度ではＰＨ，は一部分解してＰ！
とＰ４になっている。このＰ！とＰ４の比率は、温度に
依存している。いずれにしても、ＩｎＰ結晶近傍にＰ、
及びＰ４の分圧がある為、ＩｎＰ結晶の分解が避けられ
、ピンホールのない一様な成膜が可能になっているので
ある。In the above example, PH gas was introduced when forming a film on the InP crystal, but at high temperatures, PH partially decomposes and P!
and P4. This P! The ratio of P4 and P4 is temperature dependent. In any case, P near the InP crystal,
Since there is a partial pressure of P4 and P4, decomposition of the InP crystal is avoided and uniform film formation without pinholes is possible.
なお、ＩｎＰの他１ｃＧａＰ結晶上への成膜も同様に行
なえる他、ＧａＡｓＰやＩｎＧａＡｓＰ結晶上への成膜
にもＰＨ，ガスの添加は有効である。この他、ＧａＡｓ
やＡｌＧａＡｓ結晶上への成膜に際して導入するＶ族元
素を含むガスとしては、人ｓＨｓガスが有効である。Note that addition of PH and gas is also effective for film formation on GaAsP and InGaAsP crystals as well as on InP and 1cGaP crystals. In addition, GaAs
As a gas containing a group V element to be introduced when forming a film on an AlGaAs crystal, a sHs gas is effective.
以上は、拡散工程へのシリコン窒化膜の応用を族元素賃
金むガス雰囲気中でシリコン窒化膜を形成するようにし
たので、化合物半導体上にシリコン窒化膜を形成する場
合でも、ピンホールもなく一様で、透膜現象も起らない
良質な膜を得ることができる。In the above, the silicon nitride film is applied to the diffusion process by forming the silicon nitride film in a gas atmosphere containing group elements, so even when forming the silicon nitride film on a compound semiconductor, there are no pinholes and the silicon nitride film is uniform. It is possible to obtain a high-quality membrane that does not cause membrane permeation phenomenon.
出願人 工業技術院長 石 坂 誠 −Applicant: Director of the Agency of Industrial Science and Technology Makoto Ishizaka −
Claims (1)
ることを特徴とするシリコン窒化膜の形成方法。A method for forming a silicon nitride film, comprising forming the silicon nitride film in a gas atmosphere containing a group V element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11919481A JPS5826014A (en) | 1981-07-31 | 1981-07-31 | Formation of silicon nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11919481A JPS5826014A (en) | 1981-07-31 | 1981-07-31 | Formation of silicon nitride film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5826014A true JPS5826014A (en) | 1983-02-16 |
| JPS6310893B2 JPS6310893B2 (en) | 1988-03-10 |
Family
ID=14755243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11919481A Granted JPS5826014A (en) | 1981-07-31 | 1981-07-31 | Formation of silicon nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5826014A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5421171A (en) * | 1977-07-18 | 1979-02-17 | Matsushita Electric Ind Co Ltd | Manufacture for compound semiconductor device |
| JPS5664442A (en) * | 1979-10-30 | 1981-06-01 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1981
- 1981-07-31 JP JP11919481A patent/JPS5826014A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5421171A (en) * | 1977-07-18 | 1979-02-17 | Matsushita Electric Ind Co Ltd | Manufacture for compound semiconductor device |
| JPS5664442A (en) * | 1979-10-30 | 1981-06-01 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6310893B2 (en) | 1988-03-10 |
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