JPS584180A - Active matrix substrate - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

Detailed Description of the Invention This invention - Alumina glass, borosilicate glass, and some theories include at least polycrystalline silicon on a transparent substrate such as quartz. Kmf Tamemono De Ame.

In recent years, the field of application of flat WIG crystal displays has been expanding from wristwatches, calculators, and toys to automobiles, measuring instruments, and information equipment. A liquid crystal display panel for TV III* display has been developed in which a liquid crystal is sealed between a substrate and a transparent glass plate.

In an example in which a liquid crystal panel is constructed using one set of attatip matrices, the above-mentioned single-crystal G (using a substrate of IA or thin 1 ll on a glass substrate) and a varistor group [
Although the use of atta-type matrices has already been developed, the use of atta-type matrix substrates is promising in the future, since they are made into large panels and the thin transistor I is placed on the glass substrate from the KW stripe painting. Ws Jl is considered a quasi-method.

It is well known that conventionally, thin film transistors are produced by depositing polycrystalline materials on glass substrates, which requires the use of low-temperature processes due to the HLI and 111 conditions applied to the substrate. However, in the case of an active matrix substrate using thin film transistors, the peripheral drive circuit II is required to operate at a high frequency, leaving aside the attenuation matrix circuit, so at least the A excitation f is not close to that of single crystal silicon. Generally, the peripheral drive path is formed on a single crystal silicon substrate and then removed to an active matrix substrate.

However, it goes without saying that the conventional one-set method not only increases the manufacturing cost of the peripheral drive circuit board but also increases the cost of disassembling the attribution mask board, which leads to a tremendous increase in costs. Nor.

In addition, when the active matrix substrate is made of a heat-resistant material similar to that of a quartz substrate, the base material is 10.
It is possible to manufacture active matrix substrates with built-in peripheral drive circuits by achieving 1kHz high-temperature 7W processing at temperatures above 0OC.

However, the one thing I would like to pause on here is the original leak.

Originally, flat-panel LCD displays have great utility as portable and outdoor devices, but they can also be used under sunlight.
f increases.

Since direct sunlight is reflected on the display screen of the Ritas xC Group IIIi, sunlight also enters the XC7gg.

The incident light into the XC substrate generates electrons and holes, which diffuse into the substrate and reach the P-N junction ISK, and a current flows through the Y-1111 junction.In other words, the photovoltaic effect of the transistor 's Thor Wings Drain! - Due to the spontaneous rise of the Rita phenomenon at the summer junction, the correct %AWifl1m indication could not be obtained.10
Image flickers study 1 disappears. For this reason, cocoon memory-
One way to suppress the phenomenon is to
By making it smaller and reducing the motor current, *as mentioned above, it is in the favor of the attaipumatritus.That's it!
Ii[This is because it is possible. However, since the Gekiki door temperature process crystallizes the entire polycrystalline silicon on the quartz substrate, the Ktj tremendous transfer is high (' Preferred structure ゛However, i.

In addition, as is well known in recent years, laser light (A/VH) uses 11 (electron beam) to achieve crystallization by irradiating the polycrystalline silicon surface *0% or ion irradiation. Technology has been developed to erase the damage caused by time.

Among them, 1rcv for laser heating.

CV Cryton laser, pulsed YAG laser, CW
There are various methods such as pumped YAG lasers, and they vary in terms of structure and operation, including output, energy, and spot diameter, as well as productivity and stability.

There are essential differences between the two, and the choices depending on the purpose are also overlapping.
! For the first time.

Using laser annealing technology using this laser
In this case, for example, it is possible to increase the overall conductivity by applying a laser 7 burn to the peripheral layer IE1 [g circuit built-in attatip itrix group WL on a glass substrate. However, the laser annealing effect is determined by the spot diameter and irradiation time KID throughput, so if laser annealing is performed on the entire base, the productivity of 1-Togo 9, for example, can be reduced to just a few boards. This results in an extremely inefficient process.

As mentioned above, AK manufactures active matrix substrates that are highly durable and low-cost! There is a need to improve various drawbacks of conventional methods.

The present invention is intended to eliminate the drawbacks of the conventional art, namely, to form an attachable structure using polycrystalline silicon or aluminum as the main structural member on a transparent substrate such as glass. Furthermore, peripheral drive circuits are arranged on one board in such a way that they are embedded in the external drive circuit.
Radar annealing is performed only on the peripheral drive--Gijo, etc. to increase the 1-[ of the transistor.
For.

In other words, as mentioned above, including the built-in peripheral drive ASI, 1! As II, the laser annealing is applied to the driving path of the substrate waste side, thereby increasing the throughput, and also reducing the size of the different device of the internal 677 taper path and improving the prevention of wake-up. It has the following characteristics.

Next, in order to explain the silence using an actual fog example in which the present invention is made into T1.

Example (1) Figure 1111 is an active matrix substrate by Takaaki Moto, which is an active matrix substrate on a borosilicate glass substrate.
The peripheral drive circuit 3 is arranged around the outer periphery S with the cross path 2 in the center.

111111g1~+61ij A cross-sectional view of the substrate for carrying out the manufacturing process of the active matrix substrate of the present invention. After molding the polycrystalline silicon 114, the polycrystalline silicon IE4
Photoetch and partially open holes.

Next, the peripheral part on the board, that is, the peripheral drive circuit 1 in Figure III.
IN only within the area of! IIcI (a) (CV excitation! Beam diameter 200 sB using a mu G laser as a light source, linear velocity f
The beam was scanned in the left and right direction at 50 ts/8 aa, and the laser annealing process was performed in the order of steps 1 to 4 from 1k. OsWiBt2000Xj
After forming the second polycrystalline silicon H6 using the same bath bottom method as the polycrystalline silicon y#11 described above, the hole in the source fin 41 of the polycrystalline silicon 1 was photographed. Performed by etching.

Next, the main surface of the substrate was irradiated with phosphorus ions at K I (cvn-s(0=l[7 form II L t ll:
Attatipmash V# r- of V# 611, which was also used as a small example, to open the I y tatato hole and subsequently form the conductor lI8 to finish the imprinting of the i active matrix substrate.
There are 800 wires and 0 wires in the valley, and the data wire is about I MHz. A fruit with such performance has been created ^b,
Also, as an effect of laser annealing processing, the annealing throughput has been improved by several times compared to the conventional method.
t / Mar 1 - Tear force peripheral drive - Approximately 1100 on road sections
A/mer 1## is obtained.

Example (Second Part 1) After forming polycrystalline silicon of the same type as Example 11 and #C, partial holes were formed by photo-etching.
Example (1) of the peripheral drive circuit and (2) and 14 of the peripheral part 11I circuit after laser annealing the area of 31 under the same conditions as Q16m (11) and 1
3) Low output energy W of approximately IJ15+1” compared to
In other words, the areas C and (4) of the peripheral drive path (2) are for driving gate lines, and can operate at a lower frequency compared to the areas (11 and (11) for data spelling of buttons. The need to irradiate the entire peripheral drive circuit with the same energy WI is 1
k
Since the edges are low-energy vtiwvs morphisms, the throughput is even higher than in Example 11).

Implementation 911131 Similar to FULfILLS, after forming the first polycrystalline silicon layer and partially opening holes by photoetching, 1
18 WJial (under the same conditions as Example (1), only the (11 and +m regions, that is, the data binding drive path region) of the peripheral drive circuit were laser annealed.

That is, as described in Embodiment 11 #C (this method is also fully applicable to the attach matte substrate with a small number of lines in the game F- in particular), a great improvement can be expected.

Example (4m) As in Example (11), a partial 1kll hole was formed in the K11l polycrystalline silicon film by hole etching after the bath bottom. First, apply the laser annealing to the area (11) as indicated by the arrow (center Y1 on the left and right, row 1, then rotate the substrate 90° m1 from the center) to the area (1). The same method was used to irradiate the base 1 using the Okaji method.
In order to impose the area of (4), this: ** Example 11)
This stone has the advantage of being able to improve the X loop strength compared to Example (II) K, since the number of strokes of the beam can be greatly reduced compared to K.

Above are the examples (11 to (4))
In order to integrate the attatip matte circuit and the peripheral drive circuit into one size on a glass substrate, laser annealing technology was used at the same time. By applying laser annealing to only the drive path, we have taken measures to prevent damage to the attenuation matrix path, making it possible to provide a low-cost attribution matrix substrate that is resistant to optical radiation. be.

In the examples, holokenic acid glass is used as the transparent substrate, but a transparent substrate of soda glass or quartz** may also be used. 9.These irradiation conditions K”:)
Vh can also be freely selected depending on the purpose and does not deviate from the purpose of the present invention.

[Brief explanation of the drawing]

Figure 1111 shows a 1-active matrix based IF according to the present invention.
K-type circuit layout diagrams 11311m1 to (6) are cross-sectional diagrams of the basic structure showing the manufacturing errors of the active layer base in the present invention.
-1 is a plan view 1 showing a laser annealing irradiation method for the peripheral drive-coupling machine on the active matrix I glass substrate Q @ 611 active matrix Ill path 3...
Peripheral drive cell 4...Polycrystalline silicon film 5 @ @ @ CV ToI ('s ll6II...Polycrystalline silicon ylI 7 @ a e (7D -8jO1 film 8e
...Electrode and above Applicant Ill Co., Ltd. #Seikosha 1 person Valve Volume Output Shanghai Figure 1 Figure 2 (A) Figure 3

Claims (1)

[Claims] It consists of a matrix of data lines and gate lines, and has built-in peripheral drive paths including shift registers to drive the data lines and dart lines, respectively. Moreover, the peripheral drive l1llI is an active macilitas ICa arranged around the substrate surrounding the matrix circuit IIK.
In order to keep it separate from the first generation peripheral drive circuit, all transistors, some of which are characterized by being groove-bottomed, are transistors with a higher variation than the matrix circuit. Active i-trix board.