JPS5856987B2 - Manufacturing method of polymer piezoelectric material - Google Patents

Manufacturing method of polymer piezoelectric material

Info

Publication number
JPS5856987B2
JPS5856987B2 JP50058321A JP5832175A JPS5856987B2 JP S5856987 B2 JPS5856987 B2 JP S5856987B2 JP 50058321 A JP50058321 A JP 50058321A JP 5832175 A JP5832175 A JP 5832175A JP S5856987 B2 JPS5856987 B2 JP S5856987B2
Authority
JP
Japan
Prior art keywords
film
polarization
polyvinylidene fluoride
voltage
piezoelectric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50058321A
Other languages
Japanese (ja)
Other versions
JPS51133800A (en
Inventor
陸郎 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Columbia Co Ltd
Original Assignee
Nippon Columbia Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Columbia Co Ltd filed Critical Nippon Columbia Co Ltd
Priority to JP50058321A priority Critical patent/JPS5856987B2/en
Publication of JPS51133800A publication Critical patent/JPS51133800A/en
Publication of JPS5856987B2 publication Critical patent/JPS5856987B2/en
Expired legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/04Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/09Forming piezoelectric or electrostrictive materials
    • H10N30/098Forming organic materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Description

【発明の詳細な説明】 本発明は高分子圧電体の製造方法に関し、特にポリ弗化
ビニリデン等のフィルムを用いた変換器用の高分子圧電
体を提供せんとするものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a polymeric piezoelectric material, and particularly to provide a polymeric piezoelectric material for a transducer using a film such as polyvinylidene fluoride.

従来から、大きな圧電性を有する高分子圧電体、例えば
ポリ弗化ビニリデンを得るには、α型構造のポリ弗化ビ
ニリデンを機械的に一軸延伸することに依ってβ型構造
と威す方法、ポリ弗化ビニリデン酵液から結晶させる方
法、又は藩解法によって作成する方法等が知られている
Conventionally, in order to obtain a polymeric piezoelectric material having large piezoelectricity, such as polyvinylidene fluoride, there has been a method of mechanically uniaxially stretching polyvinylidene fluoride having an α-type structure to form a β-type structure. A method of crystallizing it from a polyvinylidene fluoride fermentation solution, a method of preparing it by the Han-kai method, etc. are known.

上述のβ型構造のポリ弗化ビニリデンを適当な温度(5
0℃以上)中で延伸すると、β型構造のポリ弗化ビニリ
デンフィルムを作ることが出来る。
The polyvinylidene fluoride with the β-type structure described above is heated at an appropriate temperature (5
When stretched at a temperature of 0° C. or higher, a polyvinylidene fluoride film with a β-type structure can be produced.

例えば、温度50〜120℃でこのフィルムに800〜
1OOOK■/Crft8度の電界を印加し、これを冷
却すると、その分子形態が変化して自発分極を生じる。
For example, at a temperature of 50 to 120°C, this film
When an electric field of 8 degrees 1OOOK/Crft is applied and this is cooled, the molecular form changes and spontaneous polarization occurs.

このようにして得られたポリ弗化ビニリデンフィルムに
電極を形成し、このフィルムに機械的変位を与えれば、
その電極間に圧電気力発生することは周知である。
If an electrode is formed on the polyvinylidene fluoride film obtained in this way and mechanical displacement is applied to this film,
It is well known that piezoelectric force is generated between the electrodes.

これ等従来の高分子圧電体の分極装置は、第1図の如き
である。
These conventional polymer piezoelectric polarization devices are shown in FIG.

第1図の例では、β型構造のフィルム1を電極2及び2
′で挾着し、油又は空気中で直流電源3よシミ極2及び
1間に高電圧を印加してフィルム1を分極処理している
In the example shown in FIG. 1, the film 1 with a β-type structure is
The film 1 is polarized by applying a high voltage between the stain electrodes 2 and 1 from the DC power source 3 in oil or air.

然し乍ら、フィルム1の厚さを限界匝迄薄くし、直流電
圧を限界[園乞高くするようにして分極を行なっても、
この第1図に示す方法によって分極したフィルム1の圧
電定数ga、は大きくすることが出来ない欠点がある。
However, even if the thickness of the film 1 is made as thin as possible and the DC voltage is made as high as possible,
There is a drawback that the piezoelectric constant ga of the film 1 polarized by the method shown in FIG. 1 cannot be increased.

従って、本発明の主目的は、分極時に電極とフィルムと
の間に、網状又は多孔質状の絶縁性物質を介在濾せて分
極させるという極めて簡単な装置によって、圧電定数g
3□を大巾に増加させることか出来る高分子圧電体を提
供せんとするものである。
Therefore, the main object of the present invention is to provide a piezoelectric constant of
The object of the present invention is to provide a polymeric piezoelectric material that can greatly increase 3□.

以下、本発明の一実施例を第2図及び第3図を参照して
詳細に説明しよう。
Hereinafter, one embodiment of the present invention will be described in detail with reference to FIGS. 2 and 3.

尚、第2図に於て、第1図と同一な部分には同一符号を
附し、その重複説明を省略する。
In FIG. 2, parts that are the same as those in FIG. 1 are given the same reference numerals, and redundant explanation thereof will be omitted.

本発明の高分子圧電体を得る装置を第2図に示す。FIG. 2 shows an apparatus for obtaining the polymer piezoelectric material of the present invention.

第2図に於て、ポリ弗化ビニリデンフィルム1とプラス
側の電極2との間に絶縁性の網、例えば絹、化学繊維網
、10〜500メツシュ程度の網、又は絶縁性の多孔質
板状物4を介在させる。
In FIG. 2, an insulating net, such as silk, a chemical fiber net, a net of about 10 to 500 meshes, or an insulating porous plate is placed between the polyvinylidene fluoride film 1 and the positive electrode 2. A shaped object 4 is interposed.

直流電源3より、ポリ弗化ビニリデンフィルム1及び網
4を挾着した電極2及び2′間に、高電圧を印加してフ
ィルム1の分極処理を行なう。
A high voltage is applied from a DC power supply 3 between the electrodes 2 and 2' to which the polyvinylidene fluoride film 1 and the mesh 4 are sandwiched, thereby polarizing the film 1.

以下、その分極条件を種々選択した本発明の各種実施例
を説明する。
Hereinafter, various embodiments of the present invention will be described in which various polarization conditions are selected.

実施例 l 第2図に示す装置に於て、100μの厚さのポリ弗化ビ
ニリデンフィルム1を、200〜250メツシユで厚さ
80μの絹の網4を介し、温度ゐ℃のシリコン油中で直
流電源3より電極2及び2′にl0KVの直流電圧を1
時間加えて分極処理させる。
Example 1 In the apparatus shown in FIG. 2, a polyvinylidene fluoride film 1 having a thickness of 100 μm was passed through a silk net 4 having a thickness of 80 μm with 200 to 250 meshes, and placed in silicone oil at a temperature of ˚C. A DC voltage of 10 KV is applied from the DC power supply 3 to the electrodes 2 and 2'.
Add time to polarize.

この分極処理を行なった後、直流電源3より電圧を印加
したまま、フィルム1等を冷却する。
After performing this polarization treatment, the film 1 and the like are cooled while applying voltage from the DC power source 3.

分極終了後、フィルム1の表口を洗浄し、真空蒸着によ
りアルミニウムをフィルム1の両面に蒸着して、これを
電極となした場合のフィルム1の圧電定数Lltは27
0 Xl 0 3mV/Nであった。
After the polarization is completed, the front surface of the film 1 is washed, and aluminum is deposited on both sides of the film 1 by vacuum evaporation. When this is used as an electrode, the piezoelectric constant Llt of the film 1 is 27.
It was 0 Xl 0 3 mV/N.

実施例 2 第2図に示すマイナス側の電極2′と100μの厚さの
β化したポリ弗化ビニリデンフィルム1との間に200
〜250メツシユで厚さ80μの綱網を介在させ、温度
85℃のシリコン油中で直流電源3よりl0KVの直流
電圧を電極2及び2′間に加え、フィルム1の分極処理
を行なう。
Example 2 Between the minus side electrode 2' shown in FIG.
The film 1 is polarized by applying a DC voltage of 10 KV from the DC power source 3 between the electrodes 2 and 2' in silicone oil at a temperature of 85 DEG C. with a wire mesh of ~250 meshes and a thickness of 80 microns interposed therebetween.

分極処理を行なった後、直流電源3より電圧を印加した
まま、フィルム1等を冷却する。
After performing the polarization process, the film 1 and the like are cooled while applying voltage from the DC power source 3.

分極終了後、フィルム1の表面を洗浄し、電極としてア
ルミニウムをその表面に真空蒸着したフィルム1の圧着
定数g3tは230X10−3mV/Nであった。
After the polarization was completed, the surface of the film 1 was washed, and aluminum was vacuum-deposited on the surface as an electrode.The compression constant g3t of the film 1 was 230×10 −3 mV/N.

実施例 3 第2図に示すプラス側の電極2及びマイナス側の電極2
′と100μの厚さのβ化したポリ弗化ビニリデンフィ
ルム1との間に200〜250メツシユで厚さ80μの
2枚の綱網を介在させる。
Example 3 Positive side electrode 2 and negative side electrode 2 shown in Fig. 2
' and a β-treated polyvinylidene fluoride film 1 having a thickness of 100 μm, two wire nets having a mesh size of 200 to 250 and having a thickness of 80 μm are interposed.

次に、他の条件は実施例2と同一条件として分極したフ
ィルム1の圧電定数ga、は228X10−3mV/N
であった。
Next, the other conditions were the same as in Example 2, and the piezoelectric constant ga of the polarized film 1 was 228 x 10-3 mV/N.
Met.

実施例 4 シリコン油の温度を80℃、直流印加電圧を12KVと
し、他の条件は実施例3と同一条件として分極したフィ
ルム1の圧電定数g3tは216XIO’ mV/Nで
あった。
Example 4 The piezoelectric constant g3t of the polarized film 1 was 216XIO' mV/N under the same conditions as in Example 3 except that the temperature of the silicone oil was 80° C. and the DC applied voltage was 12 KV.

実施例 5 115μ及び110μの厚さのポリ塩化ビニリデンフィ
ルムを重ね、組線1枚を介して電極2及び2′間に挾み
、温度90℃のシリコン油中で電極2及び2′間に直流
電圧17KVを加える。
Example 5 Polyvinylidene chloride films with a thickness of 115μ and 110μ were stacked, sandwiched between electrodes 2 and 2' through one wire assembly, and a direct current was applied between the electrodes 2 and 2' in silicone oil at a temperature of 90°C. Apply a voltage of 17KV.

この場合、厚さ115μのプラス電極2側のフィルムの
圧電定数garは252 XI O−3mV/Nであり
、厚さ110μのマイナス電極2’l!lのフィルムの
圧錠数garば251X10 mV/Nであった。
In this case, the piezoelectric constant gar of the film on the side of the positive electrode 2 with a thickness of 115μ is 252 The number of compressed tablets of 1 film was 251×10 mV/N.

比較例 1 第1図の構成に於て、温度80℃のシリコン油中で、β
化した厚さ100μのポリ弗化ビニリデンフィルム1に
直流電源3から8KVの直流電圧(温度80℃に於ける
分極電圧の限界)を1.5時間加え、フィルム1を分極
させる。
Comparative Example 1 In the configuration shown in Figure 1, β
A DC voltage of 8 KV (the limit of polarization voltage at a temperature of 80° C.) is applied from a DC power supply 3 to the polyvinylidene fluoride film 1 having a thickness of 100 μm for 1.5 hours to polarize the film 1.

この場合、フィルム1の圧電定数g3rば192X10
−3mV/Nであった。
In this case, the piezoelectric constant g3r of film 1 is 192X10
-3 mV/N.

比較例 2 実施例5と比較するために、プラス電極2側に100μ
の厚さのポリ弗化ビニリデンフィルムを配し、マイナス
電極i側に115μの厚さの同様のフィルムを配し、こ
れ等を重ね合せて電極2及び2で圧着する。
Comparative Example 2 In order to compare with Example 5, 100μ was placed on the positive electrode 2 side.
A polyvinylidene fluoride film with a thickness of 115 μm is placed on the negative electrode i side, and a similar film with a thickness of 115 μm is placed on the negative electrode i side.

シリコン油の温度を90〜95℃、直流電圧を17KV
として分極した場合の厚さ100μのフィルムの圧電定
数g3zは170×10 ’ mV/Nであり、厚さ
115μのフィルムの圧’l数gatば182XlO−
3mV/Nであった。
The temperature of silicone oil is 90-95℃, and the DC voltage is 17KV.
The piezoelectric constant g3z of a 100μ thick film when polarized as
It was 3 mV/N.

以上の各実施例及び比較列より考察すると、圧電定数g
btは分極中の直流印加電圧Eと周囲温度Tとの積rに
関係する。
Considering the above examples and comparison series, the piezoelectric constant g
bt is related to the product r of the DC applied voltage E and the ambient temperature T during polarization.

第1図に示す従来例の圧電定数の特性及び第2図に示す
本発明の一実施例の圧電定数の特性を、第3図の曲線5
及び曲線6に夫々示す。
The piezoelectric constant characteristics of the conventional example shown in FIG. 1 and the piezoelectric constant characteristics of the embodiment of the present invention shown in FIG.
and curve 6, respectively.

尚、第3図では、横軸にフィルムの厚σμと前述したγ
との比γ/μをとり、縦軸に圧電定数g3□をとってい
る。
In Fig. 3, the horizontal axis represents the film thickness σμ and the aforementioned γ.
The piezoelectric constant g3□ is plotted on the vertical axis.

本発明に依れば、上述の如くかなり大きな圧電定数を有
する高分子圧電体が得られるが、上述の作用は次のよう
に考えられる。
According to the present invention, a polymer piezoelectric material having a considerably large piezoelectric constant as described above can be obtained, and the above-mentioned effect can be considered as follows.

即ち、分極中のポリ弗化ビニリデンフィルムは、直流電
圧を受けてプラス電極側に強く静電吸着される。
That is, the polyvinylidene fluoride film during polarization is strongly electrostatically attracted to the positive electrode side by receiving a DC voltage.

その結果、延伸したβ型フィルムの厚みの不均一性、分
極用電極とフィルムとの密着状態、及び熱収縮等に依っ
てフィルムに変形が生じる。
As a result, the film is deformed due to non-uniformity in the thickness of the stretched β-type film, the state of close contact between the polarization electrode and the film, thermal shrinkage, and the like.

このフィルムの変形によって電極とフィルムとの間に生
ずる不均一な空間を、網状物によって均一化し、分極電
圧を均一に印加する。
The non-uniform space created between the electrode and the film due to the deformation of the film is made uniform by the mesh, and the polarization voltage is applied uniformly.

斯く7して、分極電界の局部的集中で生ずる発熱により
、フィルムが絶縁破壊する。
In this way, the film undergoes dielectric breakdown due to the heat generated by the local concentration of the polarization electric field.

のを防止し得るのではないかと推考される。It is speculated that it may be possible to prevent this.

上記各実施例によって興味ある結果が得られた。Interesting results were obtained in each of the above Examples.

即ち、実施例1及び実施列5の場合のフィルムと、実施
例3の場合のプラス電極側フィルムとには、メツシュ状
の凹凸が形成きれるのに対し、実施例2の場合のフィル
ム及び実施例3の場合のマイナス電極側フィルムには、
メツシュ状の凹凸が殆んど形成岱れない。
That is, the mesh-like unevenness is completely formed in the film of Example 1 and Example 5 and the positive electrode side film of Example 3, whereas the film of Example 2 and Example In case 3, the negative electrode side film has:
Almost no mesh-like irregularities are formed.

フィルムの表面に形成されたこれ等の凹凸部分によって
、フィルムのヤング率が変わり、フィルムの曲げ応力に
対する柔らかさが増加したことと、フィルムの表面に形
成された凹凸部分が変形して、結晶状態や分子の極微的
変形による電歪効果も相乗し、圧電定数が増大したもの
と推考することも出来る。
These uneven parts formed on the surface of the film change the Young's modulus of the film, increasing the flexibility of the film against bending stress, and the uneven parts formed on the surface of the film deform and change the crystalline state. It can also be inferred that the piezoelectric constant increases due to the synergistic effect of the electrostrictive effect due to minute deformation of the molecules.

本発明は、上述の如く極めて大きな圧電ξ数を有する高
分子圧電体が得られる特徴を有するものである。
The present invention has the feature that a polymeric piezoelectric material having an extremely large piezoelectric ξ number can be obtained as described above.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の高分子圧電体の分極装置、第2図は本発
明の高分子圧電体の分極装置、第3図は本発明及び従来
の分極装置により分極した高分子圧電体の圧電デ数とγ
/μとの比較特性曲線図である。 図に於て、1はフィルム、2及び2′は電極、3は直流
電源、4は網又は多孔質板状物である。
Figure 1 shows a conventional polymer piezoelectric polarization device, Figure 2 shows a polymer piezoelectric polarization device of the present invention, and Figure 3 shows a polymer piezoelectric polarization device polarized by the present invention and a conventional polarization device. number and γ
It is a comparative characteristic curve diagram with /μ. In the figure, 1 is a film, 2 and 2' are electrodes, 3 is a DC power source, and 4 is a mesh or porous plate.

Claims (1)

【特許請求の範囲】[Claims] 1 分極時に、分極されるべき物質と分極用電極との間
に網状又は多孔質状の絶縁性物質を介在させて分極処理
を威したことを特徴とする高分子圧電体の製造方法。
1. A method for producing a polymer piezoelectric material, characterized in that during polarization, a net-like or porous insulating material is interposed between the material to be polarized and the polarization electrode to enhance the polarization process.
JP50058321A 1975-05-15 1975-05-15 Manufacturing method of polymer piezoelectric material Expired JPS5856987B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50058321A JPS5856987B2 (en) 1975-05-15 1975-05-15 Manufacturing method of polymer piezoelectric material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50058321A JPS5856987B2 (en) 1975-05-15 1975-05-15 Manufacturing method of polymer piezoelectric material

Publications (2)

Publication Number Publication Date
JPS51133800A JPS51133800A (en) 1976-11-19
JPS5856987B2 true JPS5856987B2 (en) 1983-12-17

Family

ID=13081001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50058321A Expired JPS5856987B2 (en) 1975-05-15 1975-05-15 Manufacturing method of polymer piezoelectric material

Country Status (1)

Country Link
JP (1) JPS5856987B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549568B2 (en) * 1972-05-22 1979-04-25

Also Published As

Publication number Publication date
JPS51133800A (en) 1976-11-19

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