JPS5866236A - Forming method of phosphor screen - Google Patents
Forming method of phosphor screenInfo
- Publication number
- JPS5866236A JPS5866236A JP16547181A JP16547181A JPS5866236A JP S5866236 A JPS5866236 A JP S5866236A JP 16547181 A JP16547181 A JP 16547181A JP 16547181 A JP16547181 A JP 16547181A JP S5866236 A JPS5866236 A JP S5866236A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- resist
- substrate
- phosphor layer
- anode electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000011521 glass Substances 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 206010011732 Cyst Diseases 0.000 claims 1
- 208000031513 cyst Diseases 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 15
- 238000001035 drying Methods 0.000 abstract description 4
- 238000000206 photolithography Methods 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 238000004070 electrodeposition Methods 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 241000254158 Lampyridae Species 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000012224 working solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/22—Applying luminescent coatings
- H01J9/227—Applying luminescent coatings with luminescent material discontinuously arranged, e.g. in dots or lines
- H01J9/2271—Applying luminescent coatings with luminescent material discontinuously arranged, e.g. in dots or lines by photographic processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、螢光表示管における螢光面の形成方法、特に
、陽極電極からはみ出した螢光体を除去する方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a fluorescent surface in a fluorescent display tube, and particularly to a method for removing phosphor protruding from an anode electrode.
従来螢光表示管において、陽極電極上に螢光面を形成す
る方法としては、電着法や印刷法等が用いられているが
、配線パターンおよびピッチの寸法の微細化が進むにつ
れて、上紀方法によって螢光体を被着形成した場合の陽
極電極からのけみ出1が無視できないものとなって来て
いる。Conventionally, methods such as electrodeposition and printing have been used to form a fluorescent surface on the anode electrode in fluorescent display tubes, but as wiring patterns and pitch dimensions become finer, When a phosphor is deposited by a certain method, the extrusion 1 from the anode electrode has become non-negligible.
第1図に、この種の螢光面を示す。同図(1)は平面図
、伽)は断面図である。第1図において、ガラス基[1
の表面上に形成した陽極電極としてのAt薄膜2の上に
被着した螢光体3が、当#At薄膜2の周辺部に不規則
忙はみ出している。今、例えば50μmピッチ、308
m幅のAt薄膜パターンに螢光体を電着した場合、螢光
体の陽極電極からのけみ出しは片側で20#−以上にも
なり、螢光面の幅は70J!lとなって隣接螢光面と完
全釦接触してしまう。FIG. 1 shows this type of fluorescent surface. Figure (1) is a plan view, and Figure (1) is a cross-sectional view. In FIG. 1, the glass group [1
The phosphor 3 deposited on the At thin film 2 as an anode electrode formed on the surface of the phosphor 3 protrudes irregularly into the periphery of the At thin film 2. Now, for example, 50 μm pitch, 308
When a phosphor is electrodeposited on an m-wide At thin film pattern, the protrusion of the phosphor from the anode electrode is more than 20# on one side, and the width of the phosphor surface is 70J! 1, and the button comes into complete contact with the adjacent fluorescent surface.
本発明け、以上のような状況に鑑みてなされ念ものであ
り、その目的は、陽極電極からはみ出した螢光体を除去
して螢光面の形状を整形し、微細な螢光面の形成を可能
にする螢光面の形成方法を提供するととくある。The present invention was devised in view of the above-mentioned circumstances, and its purpose is to remove the phosphor protruding from the anode electrode, shape the phosphor surface, and form a fine phosphor surface. The purpose of the present invention is to provide a method for forming a fluorescent surface that enables the following.
このような目的を達成するために、本発明は、陽極電極
上に形成した螢光体にポジ型レジストを含浸させ、陽極
電極をフォトマスクとして基板裏面からg光するフォト
リングラフィの手法を用いて前記陽優電極からはみ出し
念螢光体を除去し、当該陽極電極通りの形状の螢光面を
得るものである。従って、この場合、陽極電極の螢光面
部位は不透光性であること、ま念基板は透光性であるこ
とが前提である。JV下、実施例を用いて本発明の詳細
な説明する。In order to achieve such an object, the present invention uses a photophosphorography technique in which a phosphor formed on an anode electrode is impregnated with a positive resist, and the anode electrode is used as a photomask to emit light from the back surface of the substrate. Then, the fluorescent material protruding from the positive electrode is removed to obtain a fluorescent surface having the same shape as the positive electrode. Therefore, in this case, it is assumed that the fluorescent surface portion of the anode electrode is non-transparent and that the substrate is transparent. The present invention will be described in detail using Examples below.
第2図は、本発明の一実施例により形成した螢光面を示
す。同図において(a)は平面図、(b)は断面図であ
る。FIG. 2 shows a fluorescent surface formed in accordance with one embodiment of the present invention. In the figure, (a) is a plan view, and (b) is a sectional view.
このような螢光面を形成する場合、先ず、ガラス基板1
の表面上にスパッタ法もしくけ蒸着法忙より1〜2μm
の厚みのAt薄膜を形成し、フォトエツチング法により
例えば線幅20〜50μm、ピッチ30〜100μmの
微細な短冊状のAt薄膜2からなる陽極パターンを形成
する。次めで、この基板に通常の電着法により20〜4
0μm厚の螢光体層を被着形成する。この時、螢光体層
は、その下のA28M2の周囲より20〜40μms度
不規則な形状にはみ出している。When forming such a fluorescent surface, first, the glass substrate 1 is
1 to 2 μm thick on the surface of
An At thin film 2 having a thickness of, for example, 20 to 50 μm in line width and 30 to 100 μm in pitch is formed into an anode pattern by photoetching. Next, 20 to 4
A 0 μm thick phosphor layer is deposited. At this time, the phosphor layer protrudes in an irregular shape by 20 to 40 μms from the periphery of the A28M2 underneath.
次に1この螢光体層を電着した基板にポジ型レジストを
スピンナ法を用いて塗布し、所定の時間プリ゛ヘ−=?
ソング行なう。この結果、プリントは螢光体層に含浸し
、螢光体層はレジストにより基板に固着された状態とな
る。Next, a positive resist is applied to the substrate on which the phosphor layer has been electrodeposited using a spinner method, and pre-heated for a predetermined period of time.
Let's do a song. As a result, the print impregnates the phosphor layer, and the phosphor layer becomes affixed to the substrate by the resist.
次いで、基板の裏側から露光を行ない、引続き、現像、
リンスを行なった後に乾燥すれば、At薄膜2の周囲か
らはみ出した螢光体層はレジストと共和溶解除去されて
、Aj薄膜2の形状の通りの螢光体3のみが残った状態
と慶る。この場合、螢光体層上に付着したレジストは、
露光されず、従って現偉液にも溶解しないが、ガラス基
板1との境界部分は露光されて現儂液に溶解するため、
この部分のレジストと共に剥れ落ちて除去される。なお
、裏面からの露光のみでは、特に上層部のレジストを除
去するの釦十分な露光量が得られない場合には、基板表
面側からの露光を併せて行なって露光不足を補うことも
できる。表面側からの露光に際しては、At薄膜2に対
応した透孔を有するフォトマスクを使用する。Next, exposure is performed from the back side of the substrate, followed by development and
When dried after rinsing, the phosphor layer protruding from the periphery of the At thin film 2 is removed by co-dissolution with the resist, leaving only the phosphor 3 in the shape of the Aj thin film 2. . In this case, the resist deposited on the phosphor layer is
Although it is not exposed to light and therefore does not dissolve in the present solution, the boundary portion with the glass substrate 1 is exposed to light and dissolves in the present solution.
It peels off and is removed together with the resist in this area. Note that if exposure from the back side alone does not provide a sufficient amount of exposure to remove the resist in the upper layer, exposure from the front side of the substrate may also be performed to compensate for the lack of exposure. For exposure from the front side, a photomask having through holes corresponding to the At thin film 2 is used.
次に、580℃、30分程度の焼成を行なって不用とな
ったレジストを除去することにより、螢光体のけみ出し
のない良好な螢光面が形成できる。Next, baking is performed at 580° C. for about 30 minutes to remove unnecessary resist, thereby forming a good phosphor surface without oozing out the phosphor.
ドツト状の螢光面を形成する場合には、陽極電極のドツ
ト部分を例えばAtなどからなる不透明薄膜で形成し、
その他の部分は例えばI。203などからなる透明薄膜
で形成することにより、上配不透明薄腹からなるドツト
部分の形状通りの螢光面を容易に形成することができる
。When forming a dot-shaped fluorescent surface, the dot portion of the anode electrode is formed of an opaque thin film made of At, for example, and
Other parts, for example, I. By forming the transparent thin film made of 203 or the like, it is possible to easily form a fluorescent surface having the same shape as the dot portion made of the upper opaque thin belly.
次に、普通紙にプリントできるオプチカル・プリンタ用
の発光素子アレイとして用いる螢光表示管の螢光面を形
成する場合について、より具体的に説明する。Next, the case of forming a fluorescent surface of a fluorescent display tube used as a light emitting element array for an optical printer capable of printing on plain paper will be described in more detail.
(具体例1)
第3図に示すように、所定の寸法に切断し洗争し念ガラ
ス基板1の土に、蒸着法により0.2μm厚の透明薄膜
を全面に形成し、次いで、短冊状にバターニングして線
幅50μm、ピッチ100μmの透明薄膜4からなる陽
極パターンを2048本形成した。(Specific Example 1) As shown in Fig. 3, a transparent thin film with a thickness of 0.2 μm was formed on the entire surface of the glass substrate 1 by a vapor deposition method, after cutting it into a predetermined size and cleaning it. 2048 anode patterns each consisting of transparent thin film 4 having a line width of 50 μm and a pitch of 100 μm were formed by patterning.
次に、螢光体を形成すべき部分、即ち短冊状の各透明幕
J[4の先端部に、通常のフォトエツチング法を用いて
50#mX50μmの寸法で1.5μm厚のAt薄H2
を形成した。次いで、この基板に、電着法により螢光体
層を形成した。電着条件け、Dc15゜V、3分間印加
であり、これにより、zno:zn螢党体が2部声重厚
に形成できた。次に、原液5部に対して1部のシンナー
を加えて希釈したAZ1350ポジレジストを回転数1
,200rpIl’l e ”分間の条件で回転塗布し
た後、70C,10分間のプリベーキングを行なつ念。Next, the part where the phosphor is to be formed, that is, the tip of each rectangular transparent screen J[4] is etched using a normal photoetching method to form a 1.5 μm thick At thin H2 film with dimensions of 50 #m x 50 μm.
was formed. Next, a phosphor layer was formed on this substrate by electrodeposition. The electrodeposition conditions were DC 15°V and application for 3 minutes, and as a result, zno:zn firefly particles could be formed with two parts thickly. Next, AZ1350 positive resist diluted by adding 1 part of thinner to 5 parts of the stock solution was applied at a rotational speed of 1.
, 200 rpm for 10 minutes, and then pre-baked at 70C for 10 minutes.
次いで、基板裏面から、露光強度1.1ootaW/3
!の水銀ランプで2分間露光した後、専用の現僚液(l
:1希釈液)により1分間現像し、流水でリンスした後
乾燥しfto乾燥後、基板を電気炉に入れ、580”C
,35分間の焼成を行なってレジストを除去し、螢光面
の形成を完了し念。Next, from the back side of the substrate, an exposure intensity of 1.1ootaW/3 was applied.
! After 2 minutes of exposure with a mercury lamp, a special working solution (l
: 1 diluted solution) for 1 minute, rinsed with running water and dried. After drying, the substrate was placed in an electric furnace and heated at 580"C.
, the resist was removed by baking for 35 minutes, and the formation of the fluorescent surface was completed.
このようkして形成された螢光体3け、顕微鐘により一
定した結果、その寸法が平均51/jmX5011mで
、その形状はムを薄膜2の形状と殆んど同一であり、ム
trs*’xの周囲への不規則なはみ出しは全く観察で
き々かった。As a result of stabilizing the three phosphors formed in this manner using a microscope, their dimensions were on average 51/jm x 5011 m, and their shape was almost the same as that of the thin film 2, and was Irregular protrusion around 'x could not be observed at all.
なお、上述したと同様の方法により線幅15μm。Note that the line width was 15 μm using the same method as described above.
ピンチ30μmの陽極パターンについても螢光面の形成
を行なったが、上述したと同様に精度の高い良好な螢光
面を形成することができ念。A fluorescent surface was also formed on an anode pattern with a pinch of 30 μm, but it was not possible to form a good fluorescent surface with high precision as described above.
(具体例2)
所定の寸法に切断し、洗浄したガラス基板上に、プレー
ナマグネトロンスパッタ法により1.5 、#m厚のA
t1FJIIk全面に形成し、次いでこれをパターニン
グして、線幅50μm、ピッチlOOμmの短冊型の陽
極パターンを2048本形成した。次に、バインダーを
混練した螢光体ペーストを、上記短冊型陽極パターンの
先端部を連ねるように100μm幅の帯状に25μm厚
に印刷し、乾燥後、560℃、35分間の焼成を行なっ
てバインダを除去した。次いで、このように螢光体を破
着した基板上に、具体例1に述べたと同様の方法により
AZ1350レジストを塗布し、露光、現偉、リンス、
乾燥後、不用となったレジストを焼成して螢光面の形成
を完了し念。(Specific Example 2) On a glass substrate cut to predetermined dimensions and cleaned, A of 1.5 mm thickness was formed by planar magnetron sputtering.
It was formed on the entire surface of t1FJIIk and then patterned to form 2048 rectangular anode patterns with a line width of 50 μm and a pitch of 100 μm. Next, a phosphor paste mixed with a binder is printed in a 100 μm wide band with a thickness of 25 μm so as to connect the tips of the strip-shaped anode patterns, and after drying, baking is performed at 560° C. for 35 minutes to bind the binder. was removed. Next, AZ1350 resist was coated on the substrate with the phosphor adhered to it in the same manner as described in Example 1, and exposed, exposed, rinsed, and
After drying, the unnecessary resist was baked to complete the formation of the fluorescent surface.
このようにして形成された螢光体の寸法は平均52μm
X118μmであり、陽極パターンの周囲への不規則な
はみ出しけ全く見られなかった。The average size of the phosphor thus formed was 52 μm.
X118 μm, and no irregular protrusion to the periphery of the anode pattern was observed.
以上説明したように、本発F!iJkよれば、微細な陽
極パターンからの螢光体のけみ出しを完全に取除き、鮮
明な螢光体パターンを形成することができる。を念、陽
極パターンをフォトマスクとして用いるために、螢光面
形成のための専用のフォトマスクが不要であると共に、
マスク合せ工程も不要となり、工程が簡略化され、経済
性も高め等の種々優れた効果を有する。As explained above, the original F! According to iJk, it is possible to completely eliminate the phosphor from the fine anode pattern and form a clear phosphor pattern. In order to use the anode pattern as a photomask, there is no need for a special photomask for forming a fluorescent surface, and
It also eliminates the need for a mask matching process, simplifies the process, and has various excellent effects such as higher economic efficiency.
第1図(a)および(b)は従来方法により形成したけ
い光面を示す平面図および断面図、第2図(1)および
(b)#′i本発明の一実施例により形成した叶い光面
を示す平面図および断面図、第3図(1)およびCb)
は本発明の他の実施例により形成したけい光面を示す平
面図および断面図である。
1 m*@@ガラス基板、2−−e−azlJ[,3・
・・・螢光体、4・・・・透明薄膜。FIGS. 1(a) and (b) are a plan view and a sectional view showing a fluorescent surface formed by a conventional method, and FIGS. 2(1) and (b) are a surface formed by an embodiment of the present invention. Plan view and cross-sectional view showing the optical surface, Figure 3 (1) and Cb)
FIG. 7 is a plan view and a cross-sectional view showing a fluorescent surface formed according to another embodiment of the present invention. 1 m*@@glass substrate, 2--e-azlJ[,3・
...fluorescent material, 4...transparent thin film.
Claims (1)
が不透光性の電極パターンを形成する工程と、この電極
パターン上に螢光体層を被着形成する工程と、この螢光
体層上にポジ型フォトレジストを含浸させた後、前記ガ
ラス基板の裏面から露光する工程と、現*により被露光
部のポジ!l!7オトVシストおよび螢光体層を剥離除
去する工程とを含むことを特徴とする螢光面の形成方法
。A step of forming an electrode pattern on a transparent glass substrate in which a portion where a phosphor is to be formed is opaque, a step of depositing and forming a phosphor layer on this electrode pattern, and a step of forming a phosphor layer on the electrode pattern. After impregnating a positive type photoresist on the photoresist layer, a step of exposing the glass substrate from the back side, and a process of exposing the exposed area to positive! l! 7. A method for forming a phosphor surface, comprising the step of peeling off and removing the OtoV cyst and the phosphor layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16547181A JPS5866236A (en) | 1981-10-16 | 1981-10-16 | Forming method of phosphor screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16547181A JPS5866236A (en) | 1981-10-16 | 1981-10-16 | Forming method of phosphor screen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5866236A true JPS5866236A (en) | 1983-04-20 |
| JPS643310B2 JPS643310B2 (en) | 1989-01-20 |
Family
ID=15813037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16547181A Granted JPS5866236A (en) | 1981-10-16 | 1981-10-16 | Forming method of phosphor screen |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5866236A (en) |
-
1981
- 1981-10-16 JP JP16547181A patent/JPS5866236A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS643310B2 (en) | 1989-01-20 |
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