JPS5879809A - Preparation of silicon carbide powder - Google Patents
Preparation of silicon carbide powderInfo
- Publication number
- JPS5879809A JPS5879809A JP56173087A JP17308781A JPS5879809A JP S5879809 A JPS5879809 A JP S5879809A JP 56173087 A JP56173087 A JP 56173087A JP 17308781 A JP17308781 A JP 17308781A JP S5879809 A JPS5879809 A JP S5879809A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- nitrogen
- silicon carbide
- carbon
- purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/087—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
を加熱することによってβ型置化珪素を製造する方法に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing β-type substituted silicon by heating.
炭化珪素及びその焼結体は、高い硬鴫,ー1岸札性,耐
酸化性,耐腐食性.耐熱衝撃性及び優れ九機械的強度,
良好な熱伝導性,低い熱膨張率を有する曳め、近都ガス
タービン部材,発熱体,工具。Silicon carbide and its sintered body have high hardness, -1 hardness, oxidation resistance, and corrosion resistance. Thermal shock resistance and excellent mechanical strength,
Towing, gas turbine parts, heating elements, and tools with good thermal conductivity and low coefficient of thermal expansion.
耐摩耗部品等の幅広い材料として注目されている。It is attracting attention as a material for a wide range of wear-resistant parts.
このような炭化珪素焼結体は、焼結助剤としてアルミニ
ウム.ホウ軍勢を伶加した炭化珪素粉末を加圧焼結して
得られるが、その際得られる焼結体の緻密さ,強度等の
特性に対して決定的に重要な要素となるのが炭化珪素粉
末の平均粒径.粒度分布,粒子の形状,純度等の粉末自
身の特性である。即ち、前述のような用途に使用される
高龜高強度の炭化珪素焼結体の原料として使用される炭
化珪素粉末は、平均粒径の小さい、粒度の揃った粒状で
、かつ為純度の粉末であることがmましい。Such silicon carbide sintered bodies contain aluminum as a sintering aid. It is obtained by pressure sintering silicon carbide powder mixed with powder, but silicon carbide is a crucial element for the properties such as density and strength of the sintered body obtained. Average particle size of powder. These are the characteristics of the powder itself, such as particle size distribution, particle shape, and purity. In other words, the silicon carbide powder used as a raw material for the high-strength, high-strength silicon carbide sintered bodies used in the above-mentioned applications is a granular powder with a small average particle size, uniform particle size, and high purity. It is desirable that this is the case.
従来、゛炭化珪素の製造法としては、1)珪素と炭素を
直接反応させる方法,雪)シリカを水素雰囲気下で加熱
し炭素と反応させる方法、3)珪素のハライドとメタン
等の椴化水素の混合ガスt−tooo℃以上で反応させ
る気相合成法等が知られている。Conventionally, methods for producing silicon carbide include 1) a method in which silicon and carbon are directly reacted, 3) a method in which silica is heated in a hydrogen atmosphere and reacted with carbon, and 3) a method in which silicon halide is reacted with hydrogen such as methane. A gas phase synthesis method in which a mixed gas is reacted at a temperature of t-too0C or higher is known.
しかし、1)の方法は高純度で微細な全綱珪素を得るの
が難かしく、2)の方法は均一な粒径を持つ製品が得ら
れず、また酸素や窒素の固溶があり高純度の粉末が得に
くい.蜀の方法は微細で高純度の粉末が得られるが、反
応物に対して大量のガスを用いるので装置が大型化し、
、大量生産には適していない。However, method 1) makes it difficult to obtain high-purity, fine, whole silicon, and method 2) does not provide a product with a uniform particle size, and also contains solid solution of oxygen and nitrogen, making it difficult to obtain high-purity silicon. powder is difficult to obtain. Shu's method yields fine, high-purity powder, but requires large amounts of gas for the reactants, making the equipment large.
, not suitable for mass production.
本発明者らは、上記の点に鑑み、高純度でIi細な炭化
珪素粉末を容易に能率的に得る製造法を開発すべく鋭意
研究の結果、これらの要請を満足する全<ilT規な製
造法を見出し本発明を完成した。In view of the above points, the present inventors have conducted intensive research to develop a manufacturing method for easily and efficiently obtaining high-purity, fine silicon carbide powder, and have developed a method that satisfies these requirements. They found a manufacturing method and completed the present invention.
即ち、本発明の製造法は、含窒素シラ/化合物と炭素の
混合粉末を加熱して両者を反応させ、炭化珪素を得るも
のであり、この方法によれば4i+純度で微細なβ型炭
化珪素を煩雑な操作を費することなく、極めて容易に得
ることができる。That is, the production method of the present invention heats a mixed powder of nitrogen-containing silica/compound and carbon to react with each other to obtain silicon carbide. According to this method, fine β-type silicon carbide with 4i+ purity is obtained. can be obtained extremely easily without any complicated operations.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明の原料に使用する含窒素シラン化合物は、ハロゲ
ン化珪素とアンモニアとの反応生成物であるクリコンシ
イ・ミド(St(MH)*)と7・ロゲン化アンモニウ
ムの混合物を液体アンモニアで洗浄して得たsl(Ml
N)、あるいはシリコンジイミド、ノーロゲン化アンモ
ニウムを11票あるいはアンモニア中で加熱して得九分
解生成物、即ち81.M、H,非晶貴又は帖晶質窒化珪
素粉末勢である。The nitrogen-containing silane compound used as a raw material in the present invention is obtained by washing a mixture of chloride mide (St(MH)*), which is a reaction product of silicon halide and ammonia, and ammonium 7-halogenide with liquid ammonia. The obtained sl (Ml
N), or silicon diimide, ammonium norogenide is heated in 11 or ammonia to produce 9 decomposition products, namely 81. M, H, amorphous or crystalline silicon nitride powder.
これらの粉末は、金員、酸軍勢の不純物を実質的粒径は
微細なもの(例えば、1μm以下)はど好ましいが、平
均粒径が15μm以下のものが微細な製品を得る上で特
に好ましい。It is preferable that these powders have a fine particle size (for example, 1 μm or less) to eliminate impurities such as metals and acids, but powders with an average particle size of 15 μm or less are particularly preferable in order to obtain fine products. .
また、本発明の他の原料である炭素粉末は999−以上
の高純度のものが望ましい。またその粒径はできるだけ
細かいものが好ましく、特にα5声m以下であることが
、反志性または微細な製品を得る上で望ましい。Further, it is desirable that the carbon powder, which is another raw material of the present invention, has a high purity of 999 or higher. In addition, the particle size is preferably as fine as possible, and in particular, α5 m or less is desirable in order to obtain a refractory or fine product.
本発明では、上述のような含窒素シラン化合物と炭素粉
末を均一に混合して用いるが、その際の混合比率は、含
窒素シラン化合物の種類、NL料粉の粒子、焼成温UK
よりでも多少変化するが1含窒素シラン化合物中の珪X
1モルに対し、炭素t2〜2モルが適当てわる。In the present invention, the above-mentioned nitrogen-containing silane compound and carbon powder are used in a uniform mixture, and the mixing ratio at that time is determined by the type of nitrogen-containing silane compound, the particles of the NL material powder, the firing temperature, etc.
1 Although it changes somewhat, silicon X in the nitrogen-containing silane compound
Approximately 2 to 2 moles of carbon t is used per 1 mole.
前記混合物は、あらかじめ製造した含窒素シラン化合物
と、これKm素粉末とを混合して得てもよいが、以下の
ような方法で得ることもできる。The mixture may be obtained by mixing a nitrogen-containing silane compound prepared in advance and the Km elementary powder, but it can also be obtained by the following method.
即ち、含窒素シラン化合物を炉内に充填し、1000℃
〜csao℃の温度範囲に加熱すると同時に、約5分〜
120分間メタン、エタン等の縦比水素ガスを流通する
。このような方法によると、上記の縦比水素ガスが含窒
素シラン化合物中に拡散し、そこで分解して炭素の微粉
が含窒素シ、y/化合物中に析出するので、得られた混
合粉末は含窒素シラ/化合物と極めて微細な炭素粉末と
の均一な混合物となる。That is, a nitrogen-containing silane compound is filled into a furnace and heated to 1000°C.
~ About 5 minutes while heating to a temperature range of csao℃ ~
An aspect ratio hydrogen gas such as methane or ethane is passed through the tank for 120 minutes. According to such a method, the above-mentioned aspect ratio hydrogen gas diffuses into the nitrogen-containing silane compound, decomposes there, and fine carbon powder is precipitated in the nitrogen-containing silane compound. A homogeneous mixture of nitrogen-containing silica/compound and extremely fine carbon powder is obtained.
本発明において社、含窒素シラン化合物と炭素の混合粉
末を非酸化性雰囲気中で加熱して反応させる。その際の
加熱温度はt750℃〜t950℃が好ましい。t75
0℃未満の焼成1M度では、焼成雰囲気にもよるが、含
窒素シラン化合物と炭素との反応が充分進まず、生成物
中に窒化珪素が残る場合がある。またt950℃よりも
扁温で焼成すると、α型炭化珪素が生成するので好まし
くない。ま友加熱時間は5分〜120分で充分である。In the present invention, a mixed powder of a nitrogen-containing silane compound and carbon is heated and reacted in a non-oxidizing atmosphere. The heating temperature at that time is preferably t750°C to t950°C. t75
If the firing temperature is less than 0° C. and the firing temperature is 1M, the reaction between the nitrogen-containing silane compound and carbon may not proceed sufficiently, and silicon nitride may remain in the product, although it depends on the firing atmosphere. Furthermore, firing at a temperature lower than t950° C. is not preferable because α-type silicon carbide is produced. A heating time of 5 minutes to 120 minutes is sufficient.
本発明での焼成雰囲気は、非酸化性雰囲気であればどの
ようなものでも使えるが、アルゴン、ヘリウム等の不活
性ガス、ノ〜ロゲンガス、水木ガスあるiは真空等の雰
囲気で、もし、これらガス中に窒素ガスが混在している
場合は、窒素分圧の低いものの方が、含窒素シラン化合
物と炭素との反応を促進する上で効果がある。しかし、
窒素雰囲気中でも、例えば1.800℃以上の11w1
aA度で焼成することによって充分反応する。また、反
応後。Any non-oxidizing atmosphere can be used as the firing atmosphere in the present invention, but if these When nitrogen gas is mixed in the gas, a gas with a lower nitrogen partial pressure is more effective in promoting the reaction between the nitrogen-containing silane compound and carbon. but,
Even in a nitrogen atmosphere, for example, 11w1 at a temperature of 1.800℃ or higher
It reacts sufficiently by firing at aA degree. Also, after the reaction.
未反応の縦累を除くために、空気気流中で500〜90
0℃に加熱することが望ましい。500-90 in an air stream to remove unreacted ridges.
It is desirable to heat to 0°C.
上述の方法により、高純度の極めて微細なβ型炭化珪素
粉末を得る理由は、以下のように考えられる。The reason why highly purified and extremely fine β-type silicon carbide powder can be obtained by the above method is thought to be as follows.
即ち、出発原料となる含窒素シラン化合物が、もともと
非常に微細なものであシ、(通常1pm以下)これが分
解と同時に炭素と反応して炭化珪素となる際も、反応物
は粒成長の原因となるような液相あるいは気相を経由す
ることなく、固相内で反応が進行する丸め5結局生成炭
化珪素は初期の含窒素シラン化合物の形状をよく保存し
、従って微細な生成物が得られるものと考えられる。That is, the nitrogen-containing silane compound that is the starting material is originally very fine (usually 1 pm or less), and when it decomposes and reacts with carbon to form silicon carbide, the reactants are the cause of grain growth. The reaction proceeds in the solid phase without passing through the liquid or gas phase, which results in rounding 5. In the end, the formed silicon carbide preserves the shape of the initial nitrogen-containing silane compound well, and therefore a fine product is obtained. It is considered that the
また、本発明に使用する含窒素シラ/化合物は、通常ハ
ロゲン化珪素とアンモニアを反応させることによって容
易に昼純度で粒度の揃った微細なものが得蔦れるため、
このような含窒素シラン化合物と炭素粉末とを混合し、
加熱するだけで微細な炭化珪素を得る本発明は、粉砕2
粒度調整等の煩雑な操作を必要とせず、従って不純−の
混入する恐れの非常に少ない有利な方法といえる。In addition, the nitrogen-containing silica/compound used in the present invention can be easily obtained as a fine product with daytime purity and uniform particle size by reacting silicon halide with ammonia.
Mixing such a nitrogen-containing silane compound and carbon powder,
The present invention obtains fine silicon carbide simply by heating.
It can be said that this is an advantageous method that does not require complicated operations such as particle size adjustment, and therefore has very little risk of contamination with impurities.
このように、含窒素シラン化合物と戻巣の混合粉末を非
酸化性雰囲気下で加熱して両者を反応させる本発明の方
法によシ、平均粒径がIpm以下、β相含有率が95重
を一以上の高純度炭化珪素を極めて容易に得ることがで
きる。従って、これを原料として置化珪累焼結体とした
場合、その焼結体は化学的物理的に安定で高強Ifを発
揮するため。As described above, by the method of the present invention in which a mixed powder of a nitrogen-containing silane compound and a return nest is heated in a non-oxidizing atmosphere to cause the two to react, a powder having an average particle size of Ipm or less and a β phase content of 95% can be obtained. One or more highly purified silicon carbide can be obtained very easily. Therefore, when this is used as a raw material to make a silica sintered body, the sintered body is chemically and physically stable and exhibits high strength If.
高温高応力材料用の焼結用原料粉末として有用でおる。It is useful as a raw material powder for sintering high-temperature, high-stress materials.
次に実施例で本発明を更に絆述する。Next, the present invention will be further described in Examples.
実施例1
四塩化珪素とアンモニアを反応させて得た反応生成物を
石英で形成された管状炉内に仕込み、アンモニア気随中
、1.aaa℃の温[’で10#6jkl保持して白色
の非晶質粉末(平均粒径α1μ)1得た。化学分析によ
りこの粉末の組成は5itN、Hでおることがわかった
。Example 1 A reaction product obtained by reacting silicon tetrachloride with ammonia was charged into a tubular furnace made of quartz, and while ammonia was being drawn in, 1. A white amorphous powder (average particle size α1μ) was obtained by holding 10 #6jkl at a temperature of aaa°C [']. Chemical analysis revealed that the composition of this powder was 5 itN, H.
次に上記の方法で得た粉末を20〜x100%;x20
%のモリブデン製ボートに充填し、管状炉内にメタンガ
スを毎分300−の流電で流通しながらも200℃の温
度で15分間保持してSi、N3Hと炭素の混合粉末を
得、次にこの混合粉末を高周波誘導炉によって諸累雰囲
気下1,800℃に加熱し、α5時間保持した。Next, add the powder obtained by the above method to 20 to 100%;
% in a molybdenum boat, and maintained at a temperature of 200°C for 15 minutes while flowing methane gas at a current of 300° per minute in a tube furnace to obtain a mixed powder of Si, N3H, and carbon. This mixed powder was heated to 1,800° C. in a mixed atmosphere using a high frequency induction furnace and held for α5 hours.
上記のようにして得られた粉末1に梃に空気中、800
℃の温度で2時間保持し、未反応の′炭素全二酸化炭素
とtで除去した。得られた粉末は緑色を呈し% xH
粉末(ロ)折によりβ型炭化珪素とlW1足された。こ
の炭化珪素粉末の比表面積は2−5w17fであった。Powder 1 obtained as above was added to 800 ml of powder in air.
The mixture was kept at a temperature of 0.degree. C. for 2 hours, and all unreacted carbon was removed with carbon dioxide. The obtained powder has a green color and % xH
β-type silicon carbide and lW1 were added by powder (b) folding. The specific surface area of this silicon carbide powder was 2-5w17f.
またこの粉末の電子顕微鏡写真(5000倍)を第1図
に示した。写真から製品炭化珪素の平均粒径は1声であ
ることがわかった。Further, an electron micrograph (5000x magnification) of this powder is shown in FIG. From the photograph, it was found that the average particle size of the product silicon carbide was one grain.
実施例2
実施例1と同様にして得fC81(NH)、 、 N
H4Cl混合粉末を約−70℃の液体アンモニアで洗浄
し% M++生した11rH4Ctを除去し、s t
< NH)tの粉末(平均粒径(11声)をIIL#l
lシた。Example 2 Obtained fC81(NH), , N in the same manner as Example 1
The H4Cl mixed powder was washed with liquid ammonia at about -70°C to remove the %M++ formed 11rH4Ct, and
<NH)t powder (average particle size (11 tones) IIL#l
It was.
次に上記の方法で得た粉末109と純度99%平均粒径
α5P以下の炭素粉末4tとを均一に混合し、この混合
粉末ケ高周波誘導炉により窒素W囲気中、t750℃で
15時間加熱し、反応させた。Next, the powder 109 obtained by the above method and 4 tons of carbon powder with a purity of 99% and an average particle size of α5P or less were mixed uniformly, and the mixed powder was heated in a high frequency induction furnace at t750°C in a nitrogen atmosphere for 15 hours. , reacted.
上記のようにして得られた粉末を更に空気中、800℃
の温度で2#間保持し、未反応の炭素全二酸化炭素とし
て除去した。得られた粉末#′j緑色を呈し、2線粉末
回折によりβ型炭化珪素と回転された。この炭化珪素粉
末の比表面積を6JII示した結果は2.8rrp/r
であった。The powder obtained as above was further heated to 800°C in air.
The mixture was maintained at a temperature of 2°C for 2 hours, and all unreacted carbon was removed as carbon dioxide. The resulting powder #'j exhibited a green color and was rotated with β-type silicon carbide by two-line powder diffraction. The specific surface area of this silicon carbide powder was 6JII, and the result was 2.8rrp/r.
Met.
実施例5
実施例1と同様にして得た5i2N辻と履素とのlk合
粉末jofiモリプデ/鯛のボートに充填し、管状炉に
よりアルゴンガスの流通下、%400℃の温度で5時間
保持した。アルゴンガスの流普は300m/!/分とし
た。Example 5 A lk composite powder of 5i2N Tsuji and Chlorine obtained in the same manner as in Example 1 was filled into a jofi molypude/sea bream boat and held at a temperature of %400°C for 5 hours under argon gas flow in a tube furnace. did. The flow rate of argon gas is 300m/! / minute.
上記のようにして得られた粉末を史に空気中、800℃
の温度で2##f間保持し、未反応の炭、1に酸化炭素
として除去した。侍らむた粉末は緑色全量し、X線粉末
回折によりβ型版化珪素と同定された。この炭化珪素の
比表IIIj積?測定した結果は4.5 m” #であ
った。The powder obtained as above was heated to 800°C in air.
The mixture was maintained at a temperature of 2 ##f, and unreacted carbon was removed as carbon oxide. Samurai Ramuta powder was completely green in color and was identified as β-type silicon plate by X-ray powder diffraction. This silicon carbide ratio III product? The measured result was 4.5 m''#.
第1図は1本発明の実施例で得た炭化珪素粉末の電子顕
微鏡写真(3000倍)である。
特許出願人 東l$費運工業株式会社FIG. 1 is an electron micrograph (3000x magnification) of silicon carbide powder obtained in Example 1 of the present invention. Patent applicant Tol$ Kaiun Kogyo Co., Ltd.
Claims (1)
中で加熱することを特徴とする炭化珪素粉末の製造方法A method for producing silicon carbide powder, which comprises heating a mixed powder of a nitrogen-containing silane compound and carbon in a completely non-oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56173087A JPS5879809A (en) | 1981-10-30 | 1981-10-30 | Preparation of silicon carbide powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56173087A JPS5879809A (en) | 1981-10-30 | 1981-10-30 | Preparation of silicon carbide powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5879809A true JPS5879809A (en) | 1983-05-13 |
| JPS6313931B2 JPS6313931B2 (en) | 1988-03-28 |
Family
ID=15953956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56173087A Granted JPS5879809A (en) | 1981-10-30 | 1981-10-30 | Preparation of silicon carbide powder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5879809A (en) |
-
1981
- 1981-10-30 JP JP56173087A patent/JPS5879809A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6313931B2 (en) | 1988-03-28 |
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