JPS5883419A - surface acoustic wave device - Google Patents
surface acoustic wave deviceInfo
- Publication number
- JPS5883419A JPS5883419A JP18110881A JP18110881A JPS5883419A JP S5883419 A JPS5883419 A JP S5883419A JP 18110881 A JP18110881 A JP 18110881A JP 18110881 A JP18110881 A JP 18110881A JP S5883419 A JPS5883419 A JP S5883419A
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- spurious response
- wave device
- piezoelectric substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/058—Holders or supports for surface acoustic wave devices
- H03H9/0585—Holders or supports for surface acoustic wave devices consisting of an adhesive layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
本発＃ＪＦｉ弾性表面波装置の性能向上に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improving the performance of the #JFi surface acoustic wave device.
一般的に用すられている弾性表面波装置は、第１図（ａ
ｌに示す様に、圧電性基板１の表面にアルミニウム等の
金属材料からなるすだれ状電極２，３が配備されている
。第１図（ｂ）は、第１図ｔａ＋に示す弾性表面波装置
の側面断面図であシ、図示する様に、パッケージのステ
ム５上に銀ペースト等の導電性接着剤をダイボンド材料
４として用い、圧電性基板１を固定する構造となってい
る。A commonly used surface acoustic wave device is shown in Figure 1 (a
As shown in FIG. 1, interdigital electrodes 2 and 3 made of a metal material such as aluminum are provided on the surface of a piezoelectric substrate 1. FIG. 1(b) is a side sectional view of the surface acoustic wave device shown in FIG. It has a structure in which the piezoelectric substrate 1 is fixed.
この様な従来の弾性表面波装置にあっては、圧電性基板
１の板厚が弾性表面波の波長に比べ充分大きい場合は問
題ないが、波長と同程度の板厚になってくると、次の様
な不具合が生じる。即ち、すだれ状電極２，３とダイボ
ンド材料４とを電極とする厚み縦振動モードに帰因する
不要波が発生し、大きなスプリアス応答が所定の弾性表
面波応答よりも低い領櫨に生じてしまうのである。In such a conventional surface acoustic wave device, there is no problem if the thickness of the piezoelectric substrate 1 is sufficiently large compared to the wavelength of the surface acoustic wave, but when the thickness becomes about the same as the wavelength, The following problems occur. That is, unnecessary waves are generated due to the thickness longitudinal vibration mode using the interdigital electrodes 2 and 3 and the die-bonding material 4 as electrodes, and a large spurious response occurs in the area where the response is lower than the predetermined surface acoustic wave response. It is.
第２図は、従来の弾性表面波装置の周波数特性を示す図
である。同図に示す様に、弾性表面波の基本応答６と弾
性表面波の高調波応答７の他に、基本応答６より低い領
域にスプリアス応答８が生じることがわかる。FIG. 2 is a diagram showing the frequency characteristics of a conventional surface acoustic wave device. As shown in the figure, it can be seen that in addition to the fundamental response 6 of the surface acoustic wave and the harmonic response 7 of the surface acoustic wave, a spurious response 8 occurs in a region lower than the fundamental response 6.
本発明は、上記した従来技術の欠点を除去した弾性表面
波装置を提供することを目的としてなされたものである
。The present invention has been made for the purpose of providing a surface acoustic wave device that eliminates the drawbacks of the prior art described above.
本発明の弾性表面波装置は、入力用すだれ状電極と出力
用すだれ状電極とがその表面に設けられ比圧電性基板と
、該圧電性基板の裏面に設けられ、かつ入力用す′だれ
状電極と出力用すだれ状電極のうち、いずれか一方に相
対する部分が導電性材料で形成され、他の部分が非導電
性物質で形成され次スプリアス応答阻止子とを有してい
ることを特徴としている。しかも、上記スプリアス応答
阻止子はパッケージのステムに上記圧電性基板を固定す
る役割も有している。The surface acoustic wave device of the present invention includes a specific piezoelectric substrate having input transducer-shaped electrodes and output transducer-shaped electrodes provided on the surface thereof, and a specific piezoelectric substrate provided on the back surface of the piezoelectric substrate, and A portion facing either one of the electrode and the output interdigital electrode is formed of a conductive material, and the other portion is formed of a non-conductive material and has a spurious response blocker. It is said that Furthermore, the spurious response blocker also has the role of fixing the piezoelectric substrate to the stem of the package.
以下添付の図面に示す実施例により、更に詳細に本発明
について説明する。The present invention will be described in more detail below with reference to embodiments shown in the accompanying drawings.
第３図は本発明の第１の実施例を示す図であり。FIG. 3 is a diagram showing a first embodiment of the present invention.
ビデオテープレコーダのＦＭ再生位相等化器に用いる弾
性表面波装置に本発明を応用したものである０本装置は
ビデオヘッドの特性号償の為に用いられるもので、装置
の制作上ビデオ周波数からクロマサブキャリアをてい倍
して周波数変換して用いられる。本実施例では、５てい
倍して、装置の中心周波数を１４，７ＭＨｚとした。第
３図において。The present invention is applied to a surface acoustic wave device used in an FM playback phase equalizer of a video tape recorder.This device is used to compensate for the characteristics of a video head. It is used by multiplying the chroma subcarrier and converting the frequency. In this example, the center frequency of the device is set to 14.7 MHz, which is multiplied by 5. In fig.
圧電性基板１としては板厚５００μｍ・１２８°回転Ｙ
軸カットのニオブ酸リチウム単結晶を用い、弾性表面波
の伝搬方向はＸ軸方向とした。入出力用すだれ状電極２
，５は一方を電極幅３５μｍ・４対の正規型電極とし、
個分は９対の重みづけ電極とし、いずれの電極２．５も
二重電極構造とした。The piezoelectric substrate 1 has a thickness of 500 μm and a rotation of 128°.
An axially cut lithium niobate single crystal was used, and the propagation direction of the surface acoustic wave was the X-axis direction. Input/output interdigital electrode 2
, 5 has one side as a regular type electrode of 4 pairs with an electrode width of 35 μm,
There were nine pairs of weighted electrodes, and each electrode 2.5 had a double electrode structure.
また、これらの入出力用すだれ状電極２．５としては、
５ｏｏｏＸのアルミニウム蒸着膜を７オトリ７１５７＜
ｔｆｉＦＪ“う６５−一・＝ｙ＋−９０２テム５上に圧
電性基板１を固定する際に、第３図に示す様にスプリア
ス応答阻止子１０がステム５と圧電性基板１０間に挿設
される。スプリアス応答阻止子１０は、出力用すだれ状
電極５の裏側が導電性物質１１で形成され、入力用すだ
れ状電極２の裏側が非導電性物質１２で形成されている
。In addition, as these input/output interdigital electrodes 2.5,
5oooX aluminum evaporated film 7157<
When fixing the piezoelectric substrate 1 on the stem 5, a spurious response blocker 10 is inserted between the stem 5 and the piezoelectric substrate 10 as shown in FIG. In the spurious response blocker 10, the back side of the output interdigital electrode 5 is formed of a conductive material 11, and the back side of the input interdigital electrode 2 is formed of a non-conductive material 12.
この実施例では導電性物質１１としては銀ベーδトが用
いられ、非導電性物質１２としてはシリコン系樹脂が用
いられた。このスプリアス応答阻止子１０は、圧電性基
板１をパッケージのステア５に接着する機能も有してい
る。In this example, silver base δ was used as the conductive material 11, and silicone resin was used as the non-conductive material 12. This spurious response blocker 10 also has the function of bonding the piezoelectric substrate 1 to the steer 5 of the package.
以上の様な構成によル、入出力用すだれ状電極２．３に
よシ励起される厚み縦振動モードの共振周波数を、入力
用すだれ状電極２と出力用すだれ状電極３とで異ならせ
ることが可能になる。従って、厚み縦振動モードによる
スプリアス応答を抑制し、良好な周波数特性の弾性表面
波装置が提供でき′る。With the above configuration, the resonance frequency of the thickness longitudinal vibration mode excited by the input/output interdigital electrode 2.3 is made different between the input interdigital electrode 2 and the output interdigital electrode 3. becomes possible. Therefore, it is possible to suppress spurious responses due to the thickness longitudinal vibration mode and provide a surface acoustic wave device with good frequency characteristics.
第４図は得られた周波数特性の一例を示す図であり、ス
プリアス応答８′は第２図に示す場合と比較して約１５
ｄＢ低下した、
第５図は本発明の第２の実施例を示す図であり、圧電性
基板１の裏面に設けられたスプリアス応答阻止子１０は
、その約手分がアル１ニウム等の導電性物質１１で形成
され（圧電性基板１の裏面に蒸着形晟する）、ステム４
には非導電性物質１２で固定されている。この第２の実
施例によっても、第１の実施例と同様の効果を得ること
が可能になる。FIG. 4 is a diagram showing an example of the obtained frequency characteristics, and the spurious response 8' is approximately 15% compared to the case shown in FIG.
FIG. 5 is a diagram showing a second embodiment of the present invention, in which the spurious response blocker 10 provided on the back surface of the piezoelectric substrate 1 is made of a conductive material such as aluminum. The stem 4 is formed of a magnetic material 11 (deposited on the back surface of the piezoelectric substrate 1).
is fixed with a non-conductive material 12. This second embodiment also makes it possible to obtain the same effects as the first embodiment.
以上の説明から明らかな様に、本発明によればスプリア
ス応答を抑制した良好な周波数特性の弾性表面波装置を
提供することが可能になる。As is clear from the above description, according to the present invention, it is possible to provide a surface acoustic wave device that suppresses spurious responses and has good frequency characteristics.
第１図（ａＪは従来の弾性表面波装置の一例を示す斜視
図、第１図１ｂ＋は従来の弾性表面波装置の一例を示す
断面側面図、第２図は第１図（ａｌｔｂ）に示した従来
の弾性表面波装置の振幅周波数特性を示す図、第３図は
本発明の弾性表面波装置の第１の実施例を示す断面側面
図、第４図は第３図に示す実施例の振幅周波数特性を示
す図、第５図は本発明の第２の実施例を示す断面側面図
である。
１・・・圧電性基板、２・・・入力用すだれ状電極３・
・・出力用すだれ状電極、４・・・ダイボンド材料５・
・・パッケージのステム、
８．８′・・・厚み縦振動モードによるスプリアス応答
、１０・・・スプリアス応答阻止子、１１・・・導電性
物質、１２・・・非導電性物質。
７／ 爵
（久）
（萄
才 ２ 図
’ ／ａ ２０ ３ａ
４０ ５０１ＩＩ 沃 ＆（ＭＨＬ）
才 ３［！ｌ
ヤ４図
圃 仮数 （ＭＨ工）
グ ５ 図Fig. 1 (aJ is a perspective view showing an example of a conventional surface acoustic wave device, Fig. 1b+ is a cross-sectional side view showing an example of a conventional surface acoustic wave device, Fig. 2 is shown in Fig. 1 (altb) FIG. 3 is a cross-sectional side view showing the first embodiment of the surface acoustic wave device of the present invention, and FIG. 4 is a diagram showing the amplitude frequency characteristics of the conventional surface acoustic wave device shown in FIG. 5 is a cross-sectional side view showing the second embodiment of the present invention. 1... Piezoelectric substrate, 2... Interdigital interdigital electrode for input 3.
...Output interdigital electrode, 4...Die bond material 5.
... Stem of package, 8.8'... Spurious response due to thickness longitudinal vibration mode, 10... Spurious response blocker, 11... Conductive material, 12... Non-conductive material. 7/ Ku (hisa) (萄sai 2 fig' /a 20 3a
40 501II Iku & (MHL) Sai 3[! l Ya4 Diagram Mantissa (MH Engineering) Gu 5 Diagram
Claims (3)
の表面に設けられている圧電性基板と、該圧電性基板の
裏面に設けられ、かつ入力用すだれ状電極と出力用すだ
れ林電極のうちいずれか一方に相対する部分が導通性材
料で形成され、他の部分が非電性物質で形成されたスプ
リアス応答阻止子とを有してなる弾性表面波装置。(1) A piezoelectric substrate having an input interdigital electrode and an output interdigital electrode provided on its surface, and an input interdigital electrode and an output interdigital electrode provided on the back surface of the piezoelectric substrate. A surface acoustic wave device comprising a spurious response blocker in which a portion facing one of the spurious response blockers is formed of a conductive material and the other portion is formed of a non-electrical material.
パッケージのステムに固定する役割を有していることを
特徴とする特許請求の範囲第（１）項記載の弾性表面波
装置。(2) The surface acoustic wave device according to claim (1), wherein the spurious response blocker has a role of fixing the piezoelectric substrate to a stem of a package.
ムに接する面全体が非電導性物質で形成され、かつ入力
用゛すだれ状電極又は出力用すだれ状電極のうちいずれ
か一方に相当する圧電性基板の裏面に接する面だけが電
導性材料で形成されていることを特徴とする特許請求の
範囲第（１）項記載の弾性表面波装置。(3) The spurious response blocker has a piezoelectric substrate whose entire surface in contact with the stem of the package is formed of a non-conductive material, and which corresponds to either the input interdigital electrode or the output interdigital electrode. The surface acoustic wave device according to claim 1, wherein only the surface in contact with the back surface of the surface acoustic wave device is formed of a conductive material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18110881A JPS5883419A (en) | 1981-11-13 | 1981-11-13 | surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18110881A JPS5883419A (en) | 1981-11-13 | 1981-11-13 | surface acoustic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5883419A true JPS5883419A (en) | 1983-05-19 |
| JPS638644B2 JPS638644B2 (en) | 1988-02-24 |
Family
ID=16094983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18110881A Granted JPS5883419A (en) | 1981-11-13 | 1981-11-13 | surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5883419A (en) |
-
1981
- 1981-11-13 JP JP18110881A patent/JPS5883419A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS638644B2 (en) | 1988-02-24 |
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