JPS588650B2 - Ondokenshiyutsuniyorhogocairo - Google Patents

Ondokenshiyutsuniyorhogocairo

Info

Publication number
JPS588650B2
JPS588650B2 JP50043375A JP4337575A JPS588650B2 JP S588650 B2 JPS588650 B2 JP S588650B2 JP 50043375 A JP50043375 A JP 50043375A JP 4337575 A JP4337575 A JP 4337575A JP S588650 B2 JPS588650 B2 JP S588650B2
Authority
JP
Japan
Prior art keywords
circuit
temperature
stage transistor
transistor
constant voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50043375A
Other languages
Japanese (ja)
Other versions
JPS51119943A (en
Inventor
永沢茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP50043375A priority Critical patent/JPS588650B2/en
Publication of JPS51119943A publication Critical patent/JPS51119943A/en
Publication of JPS588650B2 publication Critical patent/JPS588650B2/en
Expired legal-status Critical Current

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  • Electronic Switches (AREA)

Description

【発明の詳細な説明】 本発明は温度検出による保護回路の安定性の改善に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improving the stability of protection circuits through temperature sensing.

トランジスタ自体の感温性を利用した温度検出による保
護回路は従来第1図の回路のように構成されていた。
A protection circuit based on temperature detection that utilizes the temperature sensitivity of the transistor itself has conventionally been constructed as shown in the circuit shown in FIG.

同図においてIは定電流源、ZDはツエナーダイオード
、Q1はトランジスタ、R1,R2は直列接続された抵
抗でトランジスタQ1のエミツタ抵抗となっている。
In the figure, I is a constant current source, ZD is a Zener diode, Q1 is a transistor, and R1 and R2 are resistors connected in series and serve as the emitter resistance of the transistor Q1.

これらI,ZD,Q1R1,R2はR2に分割された電
圧を出力とする定電圧電源1を構成している。
These I, ZD, Q1R1, and R2 constitute a constant voltage power supply 1 that outputs the voltage divided by R2.

Q2は特に感温性のトランジスタであり、Vccは回路
電源端子、GNDは接地端子、OPは保護回路の出力端
子で被保護回路へ接続される端子である。
Q2 is a particularly temperature-sensitive transistor, Vcc is a circuit power supply terminal, GND is a ground terminal, and OP is an output terminal of the protection circuit and is connected to the protected circuit.

この保護回路はツエナーダイオードZDにより一定にさ
れR1R2により分割された一定電圧を負の温度係数を
もつトランジスタQ2のベースエミツタ間電圧VBEQ
2と比較することにより温度を検出してその時のOP出
力により被保護回路の入力を短絡する等の処置により保
護するものであるがこのような従来回路では被保護回路
装置の熱容量が小さい場合等には保護回路が作動すると
間もなく被保護回路の温度が低下して保護回路が非作動
状態に戻り被保護回路が再び温度上昇する動作を繰返し
て数十から数百Hz の発振を起したり又それによって
装置が破壊することも起った。
This protection circuit converts the constant voltage made constant by the Zener diode ZD and divided by R1R2 into the base-emitter voltage VBEQ of the transistor Q2, which has a negative temperature coefficient.
2, the temperature is detected and the OP output at that time is used to protect the circuit by short-circuiting the input of the circuit to be protected. However, in conventional circuits like this, when the heat capacity of the circuit to be protected is small, etc. In some cases, as soon as the protection circuit is activated, the temperature of the protected circuit drops and the protection circuit returns to a non-activated state, causing the temperature of the protected circuit to rise again, causing oscillations of tens to hundreds of Hz. This also resulted in the equipment being destroyed.

本発明はこのような欠点を改良することを目的とするも
のである。
The present invention aims to improve these drawbacks.

以下にその詳細を説明する。第2図は本発明1実施例の
回路図である。
The details will be explained below. FIG. 2 is a circuit diagram of a first embodiment of the present invention.

第2図においては第1図と同一機能部分には同一符号を
付してある。
In FIG. 2, the same functional parts as in FIG. 1 are given the same reference numerals.

第2図の回路に於ては第1図の回路にさらにトランジス
タQ3とQ2,Q3に共通のエミツタ抵抗R4とQ2,
Q3それぞれのコレクタ抵抗R3,R5とを設けて温度
検出回路部分をシュミットトリガー回路2構成としたも
のである。
In the circuit of FIG. 2, in addition to the circuit of FIG. 1, transistors Q3 and Q2, emitter resistors R4 and Q2 common to Q3,
Collector resistors R3 and R5 are provided for each Q3, so that the temperature detection circuit portion has a Schmitt trigger circuit 2 configuration.

本発明は以上の構成を有するものであって温度変化によ
るQ2の導通状態と非導通状態とではR4の両端の電圧
が約R4・Vcc/R4+R5だけ異なりこれによりQ
3のON,OFF即ち保護回路の動作と開放との間に=
(, d’B ”Q 7Q&・Vcc (R4+R6) dT だけ温度のヒステリシスを持つことになりこれを充分大
きくとることにより前記従来のような発振を防止するこ
とができ安定な動作が得られる点で多大の効果を奏する
ものである。
The present invention has the above configuration, and the voltage across R4 differs by approximately R4·Vcc/R4+R5 between the conducting state and non-conducting state of Q2 due to temperature change.
3 ON, OFF, that is, between the operation and opening of the protection circuit =
(, d'B ''Q 7Q&・Vcc (R4+R6) There is a temperature hysteresis of dT, and by making this sufficiently large, oscillations like the conventional ones can be prevented and stable operation can be obtained. It has great effects.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の温度検出による保護回路図、第2図は本
発明1実施例回路図である。 Q2・・・・・・1段目のトランジスタ、2・・・・・
・シュミットトリガー回路、1・・・・・・定電圧電源
、Q3・・・・・・2段目のトランジスタ。
FIG. 1 is a conventional protection circuit diagram using temperature detection, and FIG. 2 is a circuit diagram of a first embodiment of the present invention. Q2...1st stage transistor, 2...
・Schmitt trigger circuit, 1...constant voltage power supply, Q3...2nd stage transistor.

Claims (1)

【特許請求の範囲】[Claims] 1 1段目のトランジスタが感温性のものでなるシュミ
ットトリガー回路とこの1段目トランジスタの入力端を
一定電圧に保つ定電圧電源とを有し前記1段目トランジ
スタの温度上昇によりトリガーされた2段目トランジス
タ出力により被保護回路を保護することを特徴とする温
度検出による保護回路。
1. The first stage transistor has a temperature-sensitive Schmitt trigger circuit and a constant voltage power supply that maintains the input terminal of the first stage transistor at a constant voltage, and is triggered by a temperature rise of the first stage transistor. A protection circuit using temperature detection, which is characterized by protecting a protected circuit using a second stage transistor output.
JP50043375A 1975-04-11 1975-04-11 Ondokenshiyutsuniyorhogocairo Expired JPS588650B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50043375A JPS588650B2 (en) 1975-04-11 1975-04-11 Ondokenshiyutsuniyorhogocairo

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50043375A JPS588650B2 (en) 1975-04-11 1975-04-11 Ondokenshiyutsuniyorhogocairo

Publications (2)

Publication Number Publication Date
JPS51119943A JPS51119943A (en) 1976-10-20
JPS588650B2 true JPS588650B2 (en) 1983-02-17

Family

ID=12662077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50043375A Expired JPS588650B2 (en) 1975-04-11 1975-04-11 Ondokenshiyutsuniyorhogocairo

Country Status (1)

Country Link
JP (1) JPS588650B2 (en)

Also Published As

Publication number Publication date
JPS51119943A (en) 1976-10-20

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