JPS5886737A - Evaluating device for semiconductor element - Google Patents

Abstract

PURPOSE:To analyze the form of a semiconductor element and the difference in composition thereof, by applying fine infrared beams from a number of angular directions, and by constructing three-dimentionally the difference in the infrared absorption rate of the three-dimentional element. CONSTITUTION:Fine infrared beams are emitted 1 and condensed through the intermediary of a filter 2 which allows the beams to pass the whole region for evaluation of a form, and the prescribed narrow band for evaluation of the composition of SiO2, etc., and are applied to a three-dimentional element 3. The element 3 is transferred in the direction perpendicular to the axis of the infrared beam and rotated around the axis of transfer, and the change in absorption of the infrared beasms due to metal wirings or an insulation film or the like in the element is recorded by a beam-receiving unit 4. The change in absorption of the infrared beams is re-constructed on a three-dimentional map by a method of tomography. Since SiO2, Si3N4, etc. have the respective proper absorption bands, the three-dimentional map of the absorption only by the proper thin film can be obtained when only the respective band is selected for the application of the beams. Since the metal wirings absorb the whole region of the infrared beams, on the other hand, a map of the surface of the element and the form of the inside thereof can be obtained without restriction of the band. Thus, the evaluation can be performed in non-destruction manner.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a device for non-destructively evaluating the shape and composition of each part of a semiconductor-based device, particularly a so-called three-dimensional device in which dragons are arranged in multiple stages. It is.

In the conventional evaluation of the shape and composition of semiconductor cages, scanning type Naoko #1 and the like are used, but for the most part, it was only possible to evaluate the outermost surface. The biggest reason for this is secondary electrons that reflect the shape.
Another reason is that the escape depth of information carriers such as Auger electrons that reflect the composition is limited to within about 10 mm from the outermost surface. , Therefore, over a depth of several tens of μm or more,
Moreover, it is completely inapplicable to the evaluation of each part of a three-dimensional element that has a fine pattern/Vt. The purpose is to provide a device that can evaluate the internal shape and composition using infrared light that can pass through silicon, which is the main component of the device.

An embodiment of the present invention will be described below with reference to the drawings. In the figure 2, {1) is a light source that irradiates a minute infrared beam, (2
) is a narrow band infrared bandpass filter or variable diffraction grating and infrared beam concentrator, (3) is a three-dimensional system, {
4} is the light receiving section C.

First, when simply evaluating the shape of the infrared light emitted from the light source, the entire area is passed through, or when looking at the composition of 8102, for example, only the band centered on lioOQrfl is passed through (2) and collected. Light, three-dimensional table (3)
irradiate. Next, to the three-dimensional system (3) ・1 perpendicular to the infrared optical axis
While moving in the horizontal direction and rotating around the imitation axis, changes in infrared absorption due to the gold m< line or insulating film inside the three-dimensional system are recorded by the light receiving section (41r!).

The recorded changes in infrared absorption are reconstructed into a three-dimensional map in the same way as tomography.

Here, silicon dioxide 1 conversion, renated silica film, Karasu molecule thin film, etc. each have lI! Since it has an infrared absorption band of 1i7Pi, by selectively irradiating only that band, a three-dimensional map of the absorption by the unique thin film alone can be obtained.

In addition, the metal wiring inside the three-dimensional element absorbs infrared light over the entire area, and a map of the surface and internal shape of the three-dimensional element can be obtained without particularly needing to limit the infrared band.

In the above embodiment, only infrared light was described.

This may be a proton beam or other light element ion beam. Furthermore, the same effect as in the above embodiment can be obtained by utilizing the scattering of the neutron beam by the deuteron nuclear magnetic moment.

As described above, according to the present invention, since the distribution of infrared absorption is constructed three-dimensionally, there is an effect that the surface and internal shapes and compositions of the three-dimensional quadruplets can be evaluated in a non-destructive manner.

[Brief explanation of drawings]

The figure is a schematic diagram C for explaining one embodiment of the present invention. (11...Light source, (2)...Narrowband infrared pantone (
Spoiler or variable diffraction grating and infrared beam condenser, (3)... three-dimensional system, (4)... light receiving section. Agent Makoto Kuzuno - 4R+: 4R + 'l'Ii'J<'In-house 1, 'IG I'l' u)ノ, Patent Application No. 186017/1989 2 Invention Column 6 of the Detailed Description of the Invention of the Old Specification for Semiconductor Cap Evaluation Device, Column 6 of the Detailed Explanation of the Invention, Part 11 of the Specification of Content of the Amendment, is corrected as follows.

Claims (1)

[Claims] 111 Means for irradiating minute infrared beams from multiple angles;
Three-dimensional construction of the difference in infrared absorption rate of each part of three-dimensional confectionery 1
- A semiconductor device evaluation device characterized by integrating means for analyzing shape and assembly differences. (2) Interrogate the infrared emitter and the light receiver,
1. A conductor element evaluation apparatus as claimed in claim 1, characterized in that a sample stage is provided with a sample stage having a vertical movement function 2 on the optical axis and a rotation function around the movement axis.