JPS5892967A - Reliability evaluation testing method of semiconductor device - Google Patents
Reliability evaluation testing method of semiconductor deviceInfo
- Publication number
- JPS5892967A JPS5892967A JP19250181A JP19250181A JPS5892967A JP S5892967 A JPS5892967 A JP S5892967A JP 19250181 A JP19250181 A JP 19250181A JP 19250181 A JP19250181 A JP 19250181A JP S5892967 A JPS5892967 A JP S5892967A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- temperature
- timer
- control
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000011156 evaluation Methods 0.000 title claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 230000005494 condensation Effects 0.000 claims description 4
- 238000009833 condensation Methods 0.000 claims description 4
- 230000035515 penetration Effects 0.000 claims description 2
- 238000010998 test method Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 13
- 238000005260 corrosion Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 7
- 230000008595 infiltration Effects 0.000 abstract description 4
- 238000001764 infiltration Methods 0.000 abstract description 4
- 230000001133 acceleration Effects 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 7
- 239000012071 phase Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2881—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to environmental aspects other than temperature, e.g. humidity or vibrations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2862—Chambers or ovens; Tanks
Landscapes
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は半導体装置の信頼性評価試験方法にかかり、
とくに半導体装置の故障原因の一つである水分浸入によ
るアルミニウム（人ｔ）配線等の腐食に対する、強制加
速した信頼性評価試験に関するものである。[Detailed Description of the Invention] The present invention relates to a reliability evaluation test method for semiconductor devices,
In particular, it relates to a forcedly accelerated reliability evaluation test for corrosion of aluminum wiring due to water intrusion, which is one of the causes of failure in semiconductor devices.
従来プラスチックパッケージの半導体装置の信頼性評価
試験で耐湿性に対する強制加速試験として、プレッシャ
ー・クツカーテストの他に高温高温保管あるいはこれら
にバイアス印加を組合せた試験岬があるが、いずれも定
温定圧状態で試験を実施していた。％ｌζプレッシャー
・クツカーテストに於ては、第１図の断面図（ａ） 、
（ｂ）に示す様暑こ高圧に耐えうる＆１の中にシャー
レ−に入れた水３と半導体装置試料２を入れてフタ４と
ビス・ナツトＳで密封し恒温槽（Ｃ）に入れて加温し半
導体装置試料２を水蒸気の圧力雰囲気中にさらしている
。Conventionally, in the reliability evaluation test of semiconductor devices in plastic packages, in addition to the pressure Kutsuker test, there is a test cape that combines high-temperature storage or bias application as a forced acceleration test for moisture resistance, but both are conducted under constant temperature and constant pressure conditions. The test was being conducted. In the %lζ pressure Kutzker test, the cross-sectional view (a) in Figure 1,
As shown in (b), water 3 in a Petri dish and semiconductor device sample 2 are placed in a container &1 that can withstand heat and high pressure, sealed with a lid 4 and screw nuts S, and placed in a thermostatic oven (C). The heated semiconductor device sample 2 is exposed to a pressure atmosphere of water vapor.
一般に、プラスチックパッケージは水分に対し、液相の
場合は、これをほぼ完全に値蔽するが、気相の場合は、
かなり自由にプラスチックパッケージ内を通過する性質
を持っている。しかじ人を腐食に対しては気相が液相よ
りも腐食の進行程度が遅いために、気相だけの試験では
不良が発生するまでの時間が長く又不良発生率が低いた
めに長時間、多数のサンプルを用いて試験を行わないと
有意差が検出されないという欠点があった。In general, plastic packages almost completely protect against moisture when in the liquid phase, but when in the gas phase,
It has the property of passing through plastic packaging quite freely. However, when it comes to corrosion, corrosion progresses more slowly in the gas phase than in the liquid phase, so testing using only the gas phase takes a long time before defects occur, and the failure rate is low, so it can take a long time. However, there was a drawback that significant differences could not be detected unless testing was performed using a large number of samples.
この発明の目的は、水分浸入によるアルミ配線等の経食
に対し水分の浸入過程を強制加速させ、評価試験に於け
る所要試料数、所要時間を減少させることを提供するこ
とにある。An object of the present invention is to provide a method for forcibly accelerating the process of moisture infiltration of aluminum wiring, etc. due to moisture infiltration, thereby reducing the number of samples and time required for evaluation tests.
この発明によれば、高温直重囲気での急激な温度低下に
よる多量の凝縮水滴の発生と凝縮熱の放出が単なる水滴
付着番こ比べてかなり、アル電腐食の反応が速いという
事象に着目し、従来のプレッシャー・クツカーテスト懐
置に温度コントロールと圧力コントロール装置を追加改
嵐し、急激な温度変化と圧力変化を繰返し行うことによ
って、水蒸気の凝縮、浸透を促進させることを特徴とす
る方法及び装置が得られる。According to this invention, attention is paid to the phenomenon that the generation of a large amount of condensed water droplets and the release of condensation heat due to a sudden temperature drop in a high-temperature direct-loaded environment are much faster than the mere deposition of water droplets, and the reaction of alkaline galvanic corrosion is much faster. , a method characterized by adding a temperature control and pressure control device to the conventional pressure-cutting test system and promoting the condensation and penetration of water vapor by repeating rapid temperature and pressure changes. and a device are obtained.
この発明の効果は、第２図で示される様に、最初常温常
圧より温度を上昇させることで空気（ガス）と水蒸気の
混合ガス（白丸で表示）が高温高圧状−で（１）の様に
半導体装置の周辺に充満し、一部がプラスチックパッケ
ージ２を通して半導体装置内に浸入する。この状態で圧
力コントロール用の弁を開き水蒸気と共に空気（ガス）
をｉの外に排出し弁を閉じて晶の中を水蒸気だけの響囲
気憂こする（ｂ）、ａらに低温方向に温度変化を与える
と水蒸気が凝縮し、（Ｃ）の様に半導体装置内に凝縮水
が−る。さらに高温方向に温度変化を与えると（ｄ）の
様に半導体装置内の凝縮水が蒸発し、さらに夷へ没入し
又新しく水蒸気が浸入しゃ導体籟置内の水分の含有量が
増す。この状態で再び低温方向に温度変化を与えると（
Ｃ）の様に半導体装置内の凝縮水は増加する。（ｄ）％
（・）を繰返すこと番ζよって半導体装置内の凝縮水
はどんどん増加する。この様に凝縮蒸発を繰り返すこと
により、７半導体装置の中心部（ボンディングワイヤー
３やチップ４）まで凝縮水が浸透することで試験を課し
た試験群の中のＡｔ配線等の腐食による不良が短時間の
間に大量に発生し、小数の試料で有意差判定ができる仁
と曇こある。As shown in Figure 2, the effect of this invention is that by initially raising the temperature from normal temperature and pressure, the mixed gas of air (gas) and water vapor (indicated by white circles) is heated to high temperature and high pressure. It fills the area around the semiconductor device, and a part of it penetrates into the semiconductor device through the plastic package 2. In this state, open the pressure control valve and release air (gas) along with water vapor.
is discharged to the outside of i, the valve is closed, and an atmosphere of only water vapor is created inside the crystal (b). When the temperature is changed toward lower temperatures in a, the water vapor condenses, and the semiconductor is formed as shown in (c). There is condensed water inside the device. When the temperature is further changed in the direction of higher temperatures, the condensed water in the semiconductor device evaporates as shown in (d), and if water vapor further enters the semiconductor device, the moisture content in the conductor tray increases. In this state, if we again change the temperature in the direction of low temperature (
As shown in C), the amount of condensed water inside the semiconductor device increases. (d)%
By repeating (.), the amount of condensed water in the semiconductor device increases rapidly. By repeating condensation and evaporation in this way, the condensed water penetrates into the center of the 7 semiconductor devices (bonding wires 3 and chips 4), thereby reducing defects due to corrosion of At wiring, etc. in the test group. There are two kinds of grains and clouds that occur in large quantities over time, and a significant difference can be determined with a small number of samples.
次に第３図を参照して、この発明の一実施例の信頼性評
価装置を説明する。この実施例は、温度コントロール装
置（１）、 ”圧力コントロール装置（ｂ）とタイマー
（Ｃ）を取り付けたプレッシャークツカーテスト用の圧
力≦（明こ水と半導体装置を入れて密封し、ヒーター神
）でｆ１度を上げる。温度コントロール装置（ａ）で指
定した温度１２５℃になったら、空気（１，０気圧）と
水蒸気（２，３気圧）の混合圧力を水蒸気だけにするた
めに圧力コントロール装置（ｂ）にて水蒸気を含んだ空
気を晶の外へ排出し圧力釜（ｄ）、内が水蒸気圧（２，
３気圧）Ｋなる様にコントロールする。ここまでタイマ
ー（Ｃ）を２０時時駆動させ、その後温度コントロール
装置（１）で温度をｓＯ℃に低下させ、その状態でタイ
マー（＜１３を８時間動作させる。その後再び温度コン
トロール装置（ａ）で。Next, referring to FIG. 3, a reliability evaluation device according to an embodiment of the present invention will be described. In this example, the temperature control device (1), the pressure control device (b) and the timer (C) are installed, and the pressure for the pressure test car is ≦ (fill in the water and semiconductor device, seal it, and heat the heater. ) to increase f1 degree.When the temperature reaches 125 degrees Celsius specified by temperature control device (a), control the pressure to reduce the mixed pressure of air (1.0 atm) and water vapor (2.3 atm) to only water vapor. In the device (b), air containing water vapor is discharged to the outside of the crystal, and the pressure cooker (d) is heated to a pressure of water vapor (2,
3 atm)). Up to this point, the timer (C) has been operated at 20:00, and then the temperature has been lowered to sO℃ using the temperature control device (1), and in that state the timer (<13) has been operated for 8 hours.Then, the temperature control device (a) has been operated again. in.
温度を１２５’Ｃに上昇させ、その状態でタイマー（Ｃ
）を２０時時駆動させる。タイマー（Ｃ）が終了したら
ヒーター（・）を切り、圧力コントロール装置（１））
″′ｃ１圧力≦（ｄ）、の内部圧が大気圧になる様にし
て圧力＆（ｄ）％が常温になるのを待って、半導体装置
を取り出す、動作は全て自動的に処ｍされる。上記手順
による試験を課した半導体装置を評価することにより所
要の結果が得られる。Raise the temperature to 125'C and set the timer (C
) is driven at 20:00. When the timer (C) ends, turn off the heater (・) and turn off the pressure control device (1)).
``'c1 Pressure≦(d), so that the internal pressure becomes atmospheric pressure, wait for pressure & (d)% to reach room temperature, and then take out the semiconductor device. All operations are automatically processed. By evaluating the semiconductor device subjected to the test according to the above procedure, the desired results can be obtained.
以上の実施例番ζ示した様に、水蒸気雰囲気内で、温度
変化、圧力変化を繰返し加える◆によって、水蒸気の凝
縮蒸発が繰返され、半導体装置の中心部まで凝縮水が浸
透し、短時間に大量のＡｔ腐食が発生するのである。As shown in Example No. A large amount of At corrosion occurs.
例として、従来のプレッシャー・クッカーテス）（ＰＣ
Ｔ）ＪＣ於いて、耐湿性が比較的弱いと言われ、人り腐
食不良が１ヶ発生している半導体試料群（ホ）と耐湿性
が通常レベルと言われ、Ａｔ腐食不良が発生していない
半導体装置試料群（ロ）を本発明による人を腐食不良の
発生（不良率）で比較すると、表１及び図４に、示す通
りである。As an example, the traditional Pressure Cookertes) (PC
T) At JC, the semiconductor sample group (e) is said to have relatively low moisture resistance and one corrosion defect occurred, and the other semiconductor sample group (e) is said to have normal moisture resistance and has an At corrosion defect. Table 1 and FIG. 4 show a comparison of the semiconductor device sample group (b) according to the present invention with respect to the occurrence of corrosion defects (defective rate).
表１よりＰＯＴでは（２）、何間に有意差を検出できな
いが、本発明による方法を用いると有意差を検出できる
。From Table 1, POT cannot detect a significant difference between the numbers (2), but a significant difference can be detected using the method according to the present invention.
表 １
又、第４図より試験時間に対するムを腐食の発生率では
本発明による試験での不良発生率（ａ）が従来のＰＣＴ
による不要発生率（ｂ）より約３．５倍も強性加速して
いる。Table 1 Also, as shown in Figure 4, the failure rate (a) in the test according to the present invention is higher than that in the conventional PCT.
This is approximately 3.5 times more strongly accelerated than the unnecessary occurrence rate (b).
第１図は従来プレッシャー・クツカーテストに使用する
装置である。第１図（Ｊｌ）は試料を収納する圧力釜の
外形図であり、第１図（ｂ）は第１図（ａ）の断面図で
あり、又、第１図（Ｃ）は試験のために圧力ｉを格納す
る恒温槽である。
尚、第１図において、ｌ・・・・・・圧力≦、２・・・
・・・半導体装置試料、３・・・・・・シャーレに入れ
た水、４・・・・・・圧力韮のフタ、５・・・・・・圧
力函とフタを止めるビスとナツトである。
＃Ｉ２図は本発明を使用した試験での半導体装置の断面
図で示した水蒸気及び水滴に着目した雰囲気モデルを示
す図である。第２図（１）は常圧で常温常湿状態での雰
囲気モデル、第２・図（ｂ）は高圧で高さ
温高湿状態での雰囲気モデルｓｇｚ図（Ｃ）は（ｂ）彎
低温方向尋こ温度コントロールした時の雰囲気モデル、
第２図（ｄ）は（Ｃ）を再び高温方向に温度コントロー
ルした時の雰囲気モデル、第２図（・）は（ｄ）を再び
低温方向に温度コントロールした時の雰囲気モデルであ
る。
・印は気相の水（水蒸気）、・印は液相の水（水滴）を
示す。
尚、第２図において、１・・・・・・リード、２・・・
・・・プラスチックパッケージ、３・・・・・・ボンデ
ィングワイヤー、４・・・・・・チップであ゛る。
第３図は本発明の信頼性評価装置の簡単な構成図である
。
尚、籐３図において、（ａ）・・・・・・温度コントロ
ール装置、（ｂ）・・・・・・圧力コントロール装置、
（Ｃ）・・・・・・温度コントロール装置のタイマー、
（ｄ）・・・・・・試料を収納する圧力韮、そして（・
）・・・・・・圧力釜を加熱するためのヒーターである
。
第４図は耐湿性試験時間に対するＡｔ腐食不良の発生率
を示すグラフで轡る。
尚、第４図に詔いて、（ａ）・・・・・・本発明による
プレッシャー・クツカーテストでのムを腐食不要発生カ
ーブであり、（ｂ）・・・・・・従来方法によるプレッ
シャー・クツカーテストでのムを腐食不良の発生カーブ
である。
第１図
（Ｃ） 第２図
菓 ３ 図
ＦｋｌｖＩ酌指軟
′諮４図FIG. 1 shows an apparatus conventionally used for pressure-cutting tests. Figure 1 (Jl) is an external view of the pressure cooker that houses the sample, Figure 1 (b) is a cross-sectional view of Figure 1 (a), and Figure 1 (C) is a pressure cooker used for testing. This is a constant temperature bath that stores pressure i. In addition, in Fig. 1, l... pressure≦, 2...
...Semiconductor device sample, 3..Water in a Petri dish, 4..Lid of pressure bar, 5..Screws and nuts to secure pressure box and lid. . Figure #I2 is a diagram showing an atmosphere model focusing on water vapor and water droplets shown in a cross-sectional view of a semiconductor device in a test using the present invention. Figure 2 (1) is an atmospheric model at normal pressure and normal temperature and humidity, and Figure 2 (b) is an atmospheric model at high pressure and high temperature and humidity. Atmosphere model when temperature is controlled,
FIG. 2(d) is an atmosphere model when the temperature of (C) is controlled again to a high temperature direction, and FIG. 2(•) is an atmosphere model when the temperature of (d) is again controlled to a low temperature direction. The ・mark indicates water in the gas phase (water vapor), and the ・mark indicates water in the liquid phase (water droplets). In addition, in Fig. 2, 1...lead, 2...
. . . plastic package, 3 . . . bonding wire, 4 . . . chip. FIG. 3 is a simple configuration diagram of the reliability evaluation device of the present invention. In addition, in Figure 3, (a)...temperature control device, (b)...pressure control device,
(C)...Temperature control device timer,
(d)... Pressure rod for storing the sample, and (・
)...A heater for heating the pressure cooker. FIG. 4 is a graph showing the incidence of At corrosion defects versus the moisture resistance test time. In addition, Fig. 4 shows that (a)... is the corrosion-free occurrence curve in the pressure Kutsuker test according to the present invention, and (b)... is the curve for the occurrence of no corrosion in the pressure cutter test according to the present invention.・This is the occurrence curve of corrosion defects in the Kutsuker test. Figure 1 (C) Figure 2 Figure 3 Figure 4
Claims (1)
ッシャークツカーテストの試験中に電歇な温度変化と圧
力変化を繰返し行うことによって、水蒸気の凝縮及び浸
透を促進させることを特徴とする半導体装置の信頼性評
価試験方法。A semiconductor device characterized in that the condensation and penetration of water vapor is promoted by repeatedly performing electric temperature changes and pressure changes during a pressure tester test, which is a reliability evaluation test regarding moisture resistance of semiconductor devices. Reliability evaluation test method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19250181A JPS5892967A (en) | 1981-11-30 | 1981-11-30 | Reliability evaluation testing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19250181A JPS5892967A (en) | 1981-11-30 | 1981-11-30 | Reliability evaluation testing method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5892967A true JPS5892967A (en) | 1983-06-02 |
Family
ID=16292350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19250181A Pending JPS5892967A (en) | 1981-11-30 | 1981-11-30 | Reliability evaluation testing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5892967A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5863545A (en) * | 1981-10-12 | 1983-04-15 | Nissan Motor Co Ltd | Construction of radiator grill |
| JPS6140573A (en) * | 1984-08-02 | 1986-02-26 | Nec Corp | Testing of semiconductor |
| US5211528A (en) * | 1989-08-31 | 1993-05-18 | Mitsubishi Denki Kabushiki Kaisha | Industrial robot apparatus |
| CN103616589A (en) * | 2013-11-28 | 2014-03-05 | 广东出入境检验检疫局检验检疫技术中心 | Electric cooker reliability detection device |
| CN105182208A (en) * | 2015-08-13 | 2015-12-23 | 山东浪潮华光光电子股份有限公司 | LED chip test method |
| JP7601296B1 (en) * | 2024-06-12 | 2024-12-17 | 三菱電機株式会社 | Semiconductor chip testing methods |
-
1981
- 1981-11-30 JP JP19250181A patent/JPS5892967A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5863545A (en) * | 1981-10-12 | 1983-04-15 | Nissan Motor Co Ltd | Construction of radiator grill |
| JPS6140573A (en) * | 1984-08-02 | 1986-02-26 | Nec Corp | Testing of semiconductor |
| US5211528A (en) * | 1989-08-31 | 1993-05-18 | Mitsubishi Denki Kabushiki Kaisha | Industrial robot apparatus |
| CN103616589A (en) * | 2013-11-28 | 2014-03-05 | 广东出入境检验检疫局检验检疫技术中心 | Electric cooker reliability detection device |
| CN103616589B (en) * | 2013-11-28 | 2016-03-02 | 广东出入境检验检疫局检验检疫技术中心 | A kind of electric cooker reliability detection device |
| CN105182208A (en) * | 2015-08-13 | 2015-12-23 | 山东浪潮华光光电子股份有限公司 | LED chip test method |
| JP7601296B1 (en) * | 2024-06-12 | 2024-12-17 | 三菱電機株式会社 | Semiconductor chip testing methods |
| WO2025257988A1 (en) * | 2024-06-12 | 2025-12-18 | 三菱電機株式会社 | Method for testing semiconductor chip |
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