JPS5897917U - gas insulated switchgear - Google Patents
gas insulated switchgearInfo
- Publication number
- JPS5897917U JPS5897917U JP19444981U JP19444981U JPS5897917U JP S5897917 U JPS5897917 U JP S5897917U JP 19444981 U JP19444981 U JP 19444981U JP 19444981 U JP19444981 U JP 19444981U JP S5897917 U JPS5897917 U JP S5897917U
- Authority
- JP
- Japan
- Prior art keywords
- outer shell
- shell container
- insulated switchgear
- gas insulated
- partition plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Gas-Insulated Switchgears (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本案の１実施例を示す簡略断面図、第２図は第
１図のものの単線図、第３図は第１図に示す装置の斜視
−である。
１：外殻容器、５．６：仕切板、８：吊り耳、ＤＳ：断
路器、ＥＳＷ：接地装置、ＧＣＢ：Ｌや断器、Ｂ：母線
、Ｇ：絶縁性ガス。FIG. 1 is a simplified sectional view showing one embodiment of the present invention, FIG. 2 is a single line diagram of the device shown in FIG. 1, and FIG. 3 is a perspective view of the device shown in FIG. 1: Outer shell container, 5.6: Partition plate, 8: Hanging ear, DS: Disconnector, ESW: Grounding device, GCB: L or disconnector, B: Bus bar, G: Insulating gas.
Claims (1)
／・以下の絶縁性ガスを封入したもの゛において、下部
が前記外殻容器の底板に接合された仕切板を前記外殻容
器内に設けこの上部を前記外殻容器の天井板より外部に
突出させこの突出部に少（とも前記外殻容器を吊り上げ
可能な強度を有する吊り、 耳を構成して成ること
を特徴とするガス絶縁開閉装置。2kg/cdf by arranging internal equipment inside a box-shaped outer shell container
/・In the following insulating gas sealed device, a partition plate whose lower part is joined to the bottom plate of the outer shell container is provided inside the outer shell container, and the upper part of the partition plate projects outside from the ceiling plate of the outer shell container. A gas insulated switchgear characterized in that a protruding portion of the slat includes a sling or a lug having sufficient strength to lift the outer shell container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19444981U JPS5897917U (en) | 1981-12-23 | 1981-12-23 | gas insulated switchgear |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19444981U JPS5897917U (en) | 1981-12-23 | 1981-12-23 | gas insulated switchgear |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5897917U true JPS5897917U (en) | 1983-07-04 |
| JPS6345773Y2 JPS6345773Y2 (en) | 1988-11-29 |
Family
ID=30107766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19444981U Granted JPS5897917U (en) | 1981-12-23 | 1981-12-23 | gas insulated switchgear |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5897917U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US7094685B2 (en) | 2002-01-26 | 2006-08-22 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7175713B2 (en) | 2002-01-25 | 2007-02-13 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
| US7588980B2 (en) | 2006-07-31 | 2009-09-15 | Applied Materials, Inc. | Methods of controlling morphology during epitaxial layer formation |
-
1981
- 1981-12-23 JP JP19444981U patent/JPS5897917U/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7175713B2 (en) | 2002-01-25 | 2007-02-13 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
| US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US7094685B2 (en) | 2002-01-26 | 2006-08-22 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7473638B2 (en) | 2002-01-26 | 2009-01-06 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US7588980B2 (en) | 2006-07-31 | 2009-09-15 | Applied Materials, Inc. | Methods of controlling morphology during epitaxial layer formation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6345773Y2 (en) | 1988-11-29 |
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