JPS59110773A - Manufacturing method of boron structural material - Google Patents

Manufacturing method of boron structural material

Info

Publication number
JPS59110773A
JPS59110773A JP57219809A JP21980982A JPS59110773A JP S59110773 A JPS59110773 A JP S59110773A JP 57219809 A JP57219809 A JP 57219809A JP 21980982 A JP21980982 A JP 21980982A JP S59110773 A JPS59110773 A JP S59110773A
Authority
JP
Japan
Prior art keywords
boron
argon
structural material
manufacturing
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57219809A
Other languages
Japanese (ja)
Other versions
JPS6148580B2 (en
Inventor
Shigeru Yoshida
茂 吉田
Masaki Aoki
正樹 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57219809A priority Critical patent/JPS59110773A/en
Publication of JPS59110773A publication Critical patent/JPS59110773A/en
Publication of JPS6148580B2 publication Critical patent/JPS6148580B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/28Deposition of only one other non-metal element
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は硼素構造材の製造方法に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a method for manufacturing a boron structural material.

従来例の構成とその問題点 硼素は、ダイヤモンドに次ぐ嫂度を有し、かつ耐摩耗性
も非常に優れたものであるため、切削工具や摺動機械部
品、軸受けなどに有用な材料とな(1) っている。また比弾性率(弾性率/密度)が現在知られ
ている物質中では最大である。この性質は音波の伝播速
度が既存の物質中で最大であることを意味し、特に音響
材料としての応用には高い価値を発揮する。このような
硼素応用製品を鋳造や圧延といった方法によって、緻密
な塊状で得ることは困難であるため、種々の硼素応用製
品の製作にあたっては、はとんどの場合、硼素以外の材
料からなる基体上に、蒸着法やスパッタリング法、化学
蒸着法(CVD法)などによって、硼素被膜を形成した
複合体として製作される。
Structure of conventional examples and their problems Boron has a strength second only to diamond and has very good wear resistance, so it is a useful material for cutting tools, sliding machine parts, bearings, etc. (1) Yes. In addition, the specific elastic modulus (elastic modulus/density) is the highest among currently known materials. This property means that the propagation speed of sound waves is the highest among existing materials, making it particularly valuable for applications as acoustic materials. Since it is difficult to obtain such boron-applied products in the form of dense blocks by methods such as casting or rolling, in most cases, when manufacturing various boron-applied products, we use a substrate made of a material other than boron. Then, it is manufactured as a composite body with a boron coating formed thereon by a vapor deposition method, a sputtering method, a chemical vapor deposition method (CVD method), or the like.

このような従来の製造方法は、硼素の硬さや、耐摩耗性
を利用する製品に応用する場合には、普通大きな支障を
生じることがない。然し比弾性率の大きさを利用しよう
とするスピーカの振動板やカートリッジのカンナレバー
、あるいはビデオディスクのカンチレバー等の音響材料
では極めて重大な支障が生じる。すなわち複合体の密度
や弾性率は基体の性質や、蒸着法のプロセス過程によっ
て大きく左右され、硼素本来の性質が著しく減殺(2) されることがあるからである。また従来タンタル(Ta
)、ニオビウム(Nl))、モリブテン(Mo )、タ
ングステン(Ta)の基体に硼素(B)を化学蒸着法に
より付着させた後、これらの基体を溶解除去して、硼素
単独の中空体を得る方法も開発されているが、特に振動
板やビデオディスクのカンチレバー等比較的大きなもの
においては、析出した硼素構造相に異なる結晶が生じ、
混晶の形をなし、膜質の劣化、機械的強度の低下、ある
いは音波の伝播を阻害するという欠点がある。
Such conventional manufacturing methods usually do not cause any major problems when applied to products that utilize the hardness and wear resistance of boron. However, extremely serious problems occur in acoustic materials such as speaker diaphragms, cartridge cantilevers, and video disc cantilevers that utilize the magnitude of specific elastic modulus. In other words, the density and elastic modulus of the composite are greatly influenced by the properties of the substrate and the process of vapor deposition, and the inherent properties of boron may be significantly reduced(2). In addition, conventional tantalum (Ta)
), niobium (Nl)), molybdenum (Mo), and tungsten (Ta) by chemical vapor deposition, these substrates are dissolved and removed to obtain a hollow body made solely of boron. Methods have also been developed, but in particular for relatively large objects such as diaphragms and video disk cantilevers, different crystals are generated in the precipitated boron structural phase.
It has the form of a mixed crystal, which has the drawbacks of deteriorating film quality, decreasing mechanical strength, and inhibiting the propagation of sound waves.

発明の目的 本発明者は、このような従来例の欠点を解消するために
基体をクロム層で被膜することを考えたが、丈に化学蒸
着法のプロセス過程において微量のアルゴンを添加する
ことにより、従来のような異結晶の発生もなく、優れた
機械的性質を示し、かつ外観もよい製品の得られる硼素
構造材の製造方法金捉供しようとするものである。
Purpose of the Invention The present inventor considered coating the substrate with a chromium layer in order to eliminate the drawbacks of the conventional example, but by adding a small amount of argon during the chemical vapor deposition process, The present invention aims to provide a method for manufacturing boron structural materials that does not generate foreign crystals as in conventional methods, exhibits excellent mechanical properties, and provides products with good appearance.

発明の構成 本発明に係る硼素構造材の製造方法は、クロム(3) 層で被覆したタンタル、モリブデン、ニオビウム、ある
いはタングステンの基体に、微量のアルゴンを添加して
化学蒸着法により硼素層を形成することを特徴とするも
のである。例えば前記基体を反応器に収容し、赤外線加
熱、高周波加熱または通電加熱した状態で原料ガスBX
3(ただしXは塩素C/、臭素Br、沃素I等のハロゲ
ン元素)と水素H2とを流入させ、この過程において微
量のアルゴン1ffArを添加し、還元分解反応により
硼素を基体上に析出せしめる。この硼素の析出時には、
硼素構造材の作成全容易にするために基材のタンタル、
モリブデン、ニオビウムあるいはタングステンとクロム
層との間に独特の剥離現象を生じさせるのであるが、ア
ルゴンを添加しない場合は、この剥離現象が不完全で、
剥離した部分としない部分とで熱むらを生じ、析出した
硼素の表向に混晶が発生し、膜質の劣化および機械的強
度の低下を招くことがあった。アルゴンの添加により前
記剥離現象が完全かつ円滑となる。アルゴンの添加量は
反応器への原料ガスの流入量や基体の加熱温度によ(4
) って異なるが、はぼ0.1%乃至3%の範囲が適当であ
る。0.1%以下でも3%以上でも前記剥離現象が円滑
に行かず、充分な効果を上げにくいからである。尚基体
にクロムを被覆する方法としては、スパッタリング、真
空蒸着やメッキなどがある。
Structure of the Invention The method for producing a boron structural material according to the present invention involves adding a small amount of argon to a base of tantalum, molybdenum, niobium, or tungsten coated with a chromium (3) layer to form a boron layer by chemical vapor deposition. It is characterized by: For example, the substrate is housed in a reactor, heated by infrared rays, high frequency, or electrically heated, and the raw material gas BX is heated.
3 (where X is a halogen element such as chlorine C/, bromine Br, iodine I, etc.) and hydrogen H2 are introduced, and in this process, a trace amount of argon 1ffAr is added, and boron is deposited on the substrate by a reductive decomposition reaction. During this boron precipitation,
Tantalum as a base material, to facilitate the creation of boron structural materials
A unique peeling phenomenon occurs between molybdenum, niobium or tungsten and the chromium layer, but if argon is not added, this peeling phenomenon is incomplete and
Heat unevenness occurs between the peeled portion and the non-peeled portion, and mixed crystals are generated on the surface of the precipitated boron, which may lead to deterioration of film quality and reduction in mechanical strength. The addition of argon makes the peeling phenomenon complete and smooth. The amount of argon added depends on the amount of raw material gas flowing into the reactor and the heating temperature of the substrate (4
), but a range of approximately 0.1% to 3% is appropriate. This is because if the content is less than 0.1% or more than 3%, the above-mentioned peeling phenomenon will not proceed smoothly and it will be difficult to achieve a sufficient effect. Methods for coating the substrate with chromium include sputtering, vacuum deposition, and plating.

次に析出した硼素から、クロムで被覆した基体を溶解除
去して単独の硼素構造材を得るには、主としてC13、
HC/、HF 、 Br−メタノール等の酸を用いる。
Next, in order to obtain a single boron structural material by dissolving and removing the chromium-coated substrate from the precipitated boron, mainly C13,
Acids such as HC/, HF, Br-methanol are used.

実施例の説明 以下本発明の具体的な実施例について説明する。Description of examples Specific examples of the present invention will be described below.

先ず直径20闘長さ1004のタンタル線を脱脂、洗浄
の後、スパッタリング法で0.51gnのクロムを被覆
して基体を作成した。次いでこの基体全通電によって1
200°Cに加熱し、三塩化硼素BClal容撤部と水
素I(23容量部とを毎分21!の割合で3分間流し、
同時に前記21−に対してアルゴンを01%添加した。
First, a tantalum wire with a diameter of 20 mm and a length of 100 mm was degreased and cleaned, and then coated with 0.51 gn of chromium by sputtering to prepare a base. Then, by energizing the entire base, 1
Heating to 200°C, flowing boron trichloride BClal volume and hydrogen I (23 parts by volume) at a rate of 21! per minute for 3 minutes,
At the same time, 01% of argon was added to the above 21-.

この特約50μmの硼素が析出した。このようにして作
った試料を411mの長さに切断し、市販のメタノール
200m1に臭素50frを溶解させた溶液に浸(5) 潰し、基体のタンタルおよび被覆したクロムを溶解させ
た。溶解に要した時間は20時間であった。
In this case, boron having a thickness of about 50 μm was precipitated. The thus prepared sample was cut into a length of 411 m and immersed in a solution of 50 fr of bromine dissolved in 200 ml of commercially available methanol (5) to dissolve the tantalum of the base and the coated chromium. The time required for dissolution was 20 hours.

このとき硼素は溶解しなかった。At this time, boron was not dissolved.

次の表は、前記のようにして得られた硼素パイプを試料
No、  1とし、以下微量のアルゴンを添加して得ら
れた各種の中空の硼素構造体の試料とアルゴンを添加せ
ずに得られた同様の試料との抗折強度の測定結果を示す
The following table lists the boron pipe obtained as described above as sample No. 1, and the following table shows various hollow boron structure samples obtained by adding a small amount of argon and samples obtained without adding argon. The results of measuring the bending strength of the same sample are shown below.

以    下    余    白 (6) (7) 測定は梁の長さ全35備として両端支持梁の形で荷重を
加え、試料が破壊したときの荷重の測定値によった。表
中試料No、 lでは試料20本について測定した結果
、良品は19木で、その平均強度は1.80Kgr1エ
ツチングによる歩留は95%であった。No、2、No
、3は夫々アルゴン添加量の異なる場合である。
Margins below (6) (7) Measurements were made using a beam with a total length of 35 mm, and a load was applied to the beam with both ends supported, and the measured value of the load was used when the sample broke. As a result of measuring 20 samples for samples No. 1 in the table, 19 pieces were found to be of good quality, and the average strength was 1.80 Kgr. The yield by etching was 95%. No, 2, no
, 3 are cases in which the amounts of argon added are different.

No、4乃至No、12は同様に異なる基材によった場
合の結果である。No、13乃至No、 17の※印を
付したものは、アルゴンk i%加しなかった場合lを
比較例として、Aる。特にNo、 17は基材をクロム
層で被覆しなかった場合である。なおすべての試料は内
径と外径とが夫々208M 、 21順と一定(肉厚は
50μmで一定)になるように硼素の化学蒸着(CVD
)の時間全調節した。このZにll冨結果によれば、基
材をクロム層で被覆しただけで、既にエツチング歩留お
よび抗折強度の著しく向上することか明らかであるが、
硼素の化学蒸着に当って微量のアルゴンkW加すれば添
加しない場合に比して、丈にエツチング歩留が6%(試
料N、o、 13に対するNo、 1およびNo、 1
5に対するNo、7 )乃至21%(試料No、14に
対するNo、5)、(8) 抗折強度が16%(試料No、13に対するNo、1お
よびNo、 14に対するNo、6 )乃至54%(試
料No、 15に対するNo、8 )増加することが分
る。
Similarly, No. 4 to No. 12 are results obtained using different base materials. Items marked with * in No. 13 to No. 17 are A with argon k i% not added as a comparative example. In particular, No. 17 is the case where the base material was not coated with a chromium layer. All samples were subjected to boron chemical vapor deposition (CVD) so that the inner and outer diameters were constant at 208M and 21M respectively (thickness was constant at 50μm).
) was fully adjusted. According to the results, it is clear that simply coating the base material with a chromium layer can significantly improve the etching yield and bending strength.
If a small amount of argon kW is added during chemical vapor deposition of boron, the etching yield on the length is 6% compared to when no argon is added (No. 1 and No. 1 for samples N, o, 13).
(7) to 21% (Sample No. 14, No. 5), (8) flexural strength is 16% (Sample No. 13, No. 1 and No. 14, No. 6) to 54%. (Sample No. 15 vs. No. 8) It can be seen that there is an increase.

発明の詳細 な説明したように、本発明に係る硼素構造材の製造方法
によれば、クロム層で被覆した基体に、化学蒸着法によ
り硼素層を形成するに際して、微量のアルゴンを添加す
ることにより、膜質の優れた高強度の硼素構造材が歩留
まりょく得られ、産業上の価値が大である。
As described in detail of the invention, according to the method for manufacturing a boron structural material according to the present invention, when forming a boron layer on a substrate coated with a chromium layer by chemical vapor deposition, by adding a small amount of argon. , a high-strength boron structural material with excellent film quality can be obtained at a high yield, and is of great industrial value.

代理人    森   本   義   弘(9)Agent Hiroshi Mori (9)

Claims (1)

【特許請求の範囲】 1、 クロム層で被覆したタンタル、モリブデン、ニオ
ビウムあるいはタングステンのJilFK、微量のアル
ゴンを添加して化学蒸着法により硼素層を形成すること
を特徴とする硼素構造材の製造方法。 2、 アルゴンの添加量が01%乃至3%である特許請
求の範囲第1項記載の硼素構造材の製造方法。
[Claims] 1. A method for producing a boron structural material, which comprises forming a boron layer by chemical vapor deposition using tantalum, molybdenum, niobium, or tungsten JILFK coated with a chromium layer and adding a trace amount of argon. . 2. The method for producing a boron structural material according to claim 1, wherein the amount of argon added is 0.1% to 3%.
JP57219809A 1982-12-14 1982-12-14 Manufacturing method of boron structural material Granted JPS59110773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57219809A JPS59110773A (en) 1982-12-14 1982-12-14 Manufacturing method of boron structural material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57219809A JPS59110773A (en) 1982-12-14 1982-12-14 Manufacturing method of boron structural material

Publications (2)

Publication Number Publication Date
JPS59110773A true JPS59110773A (en) 1984-06-26
JPS6148580B2 JPS6148580B2 (en) 1986-10-24

Family

ID=16741369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57219809A Granted JPS59110773A (en) 1982-12-14 1982-12-14 Manufacturing method of boron structural material

Country Status (1)

Country Link
JP (1) JPS59110773A (en)

Also Published As

Publication number Publication date
JPS6148580B2 (en) 1986-10-24

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