JPS59123239A - 半導体膜の形成方法 - Google Patents

半導体膜の形成方法

Info

Publication number
JPS59123239A
JPS59123239A JP57229947A JP22994782A JPS59123239A JP S59123239 A JPS59123239 A JP S59123239A JP 57229947 A JP57229947 A JP 57229947A JP 22994782 A JP22994782 A JP 22994782A JP S59123239 A JPS59123239 A JP S59123239A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor film
formation
aqueous solution
reducing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57229947A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0259626B2 (2
Inventor
Hiroyuki Sasabe
博之 雀部
Shunsuke Kobayashi
駿介 小林
Koichi Kamisako
浩一 上迫
Yoshiaki Tsuruoka
美秋 鶴岡
Hiroyuki Okada
裕之 岡田
Yasuharu Tanaka
康晴 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP57229947A priority Critical patent/JPS59123239A/ja
Publication of JPS59123239A publication Critical patent/JPS59123239A/ja
Publication of JPH0259626B2 publication Critical patent/JPH0259626B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
JP57229947A 1982-12-28 1982-12-28 半導体膜の形成方法 Granted JPS59123239A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57229947A JPS59123239A (ja) 1982-12-28 1982-12-28 半導体膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57229947A JPS59123239A (ja) 1982-12-28 1982-12-28 半導体膜の形成方法

Publications (2)

Publication Number Publication Date
JPS59123239A true JPS59123239A (ja) 1984-07-17
JPH0259626B2 JPH0259626B2 (2) 1990-12-13

Family

ID=16900207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57229947A Granted JPS59123239A (ja) 1982-12-28 1982-12-28 半導体膜の形成方法

Country Status (1)

Country Link
JP (1) JPS59123239A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528264A (en) * 1991-12-23 1996-06-18 General Electric Company Wireless remote control for electronic equipment
WO2017055496A1 (fr) * 2015-10-02 2017-04-06 Electricite De France Procédé de dépôt d'une couche semi-conductrice sur un film semi-conducteur par photocatalyse

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528264A (en) * 1991-12-23 1996-06-18 General Electric Company Wireless remote control for electronic equipment
WO2017055496A1 (fr) * 2015-10-02 2017-04-06 Electricite De France Procédé de dépôt d'une couche semi-conductrice sur un film semi-conducteur par photocatalyse
FR3042068A1 (fr) * 2015-10-02 2017-04-07 Electricite De France Procede de depot d'une couche tampon sur un film semi-conducteur par photocatalyse

Also Published As

Publication number Publication date
JPH0259626B2 (2) 1990-12-13

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