JPS59145576A - プログラム可能なｍｏｓトランジスタ - Google Patents

プログラム可能なｍｏｓトランジスタ

Info

Publication number
JPS59145576A
JPS59145576A JP58210690A JP21069083A JPS59145576A JP S59145576 A JPS59145576 A JP S59145576A JP 58210690 A JP58210690 A JP 58210690A JP 21069083 A JP21069083 A JP 21069083A JP S59145576 A JPS59145576 A JP S59145576A
Authority
JP
Japan
Prior art keywords
charge
trap
control electrode
region
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58210690A
Other languages
English (en)
Japanese (ja)
Inventor
フランク・エム・ワンラス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZAITORETSUKUSU CORP
Original Assignee
ZAITORETSUKUSU CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZAITORETSUKUSU CORP filed Critical ZAITORETSUKUSU CORP
Publication of JPS59145576A publication Critical patent/JPS59145576A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
JP58210690A 1982-11-09 1983-11-09 プログラム可能なｍｏｓトランジスタ Pending JPS59145576A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44040582A 1982-11-09 1982-11-09
US440405 1982-11-09

Publications (1)

Publication Number Publication Date
JPS59145576A true JPS59145576A (ja) 1984-08-21

Family

ID=23748632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58210690A Pending JPS59145576A (ja) 1982-11-09 1983-11-09 プログラム可能なｍｏｓトランジスタ

Country Status (2)

Country Link
EP (1) EP0108650A3 (de)
JP (1) JPS59145576A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010038257A1 (ja) * 2008-09-30 2010-04-08 株式会社アドバンテスト プログラマブルデバイス、およびデータ書込方法

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10043204A1 (de) 2000-09-01 2002-04-04 Siemens Ag Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung
DE10045192A1 (de) 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
DE10061299A1 (de) 2000-12-08 2002-06-27 Siemens Ag Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu
DE10061297C2 (de) 2000-12-08 2003-05-28 Siemens Ag Verfahren zur Sturkturierung eines OFETs
DE10105914C1 (de) 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
DE10151036A1 (de) 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
DE10151440C1 (de) 2001-10-18 2003-02-06 Siemens Ag Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung
DE10160732A1 (de) 2001-12-11 2003-06-26 Siemens Ag Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu
DE10226370B4 (de) 2002-06-13 2008-12-11 Polyic Gmbh & Co. Kg Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET)
WO2004017439A2 (de) 2002-07-29 2004-02-26 Siemens Aktiengesellschaft Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu
DE50306683D1 (de) 2002-08-23 2007-04-12 Polyic Gmbh & Co Kg Organisches bauelement zum überspannungsschutz und dazugehörige schaltung
DE10339036A1 (de) 2003-08-25 2005-03-31 Siemens Ag Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu
DE10340643B4 (de) 2003-09-03 2009-04-16 Polyic Gmbh & Co. Kg Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht
DE10340644B4 (de) 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanische Steuerelemente für organische Polymerelektronik
DE102004040831A1 (de) 2004-08-23 2006-03-09 Polyic Gmbh & Co. Kg Funketikettfähige Umverpackung
DE102004059465A1 (de) 2004-12-10 2006-06-14 Polyic Gmbh & Co. Kg Erkennungssystem
DE102004059464A1 (de) 2004-12-10 2006-06-29 Polyic Gmbh & Co. Kg Elektronikbauteil mit Modulator
DE102004063435A1 (de) 2004-12-23 2006-07-27 Polyic Gmbh & Co. Kg Organischer Gleichrichter
DE102005009820A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe mit organischen Logik-Schaltelementen
DE102005009819A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe
DE102005017655B4 (de) 2005-04-15 2008-12-11 Polyic Gmbh & Co. Kg Mehrschichtiger Verbundkörper mit elektronischer Funktion
DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
DE102005035589A1 (de) 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Verfahren zur Herstellung eines elektronischen Bauelements
DE102005044306A1 (de) 2005-09-16 2007-03-22 Polyic Gmbh & Co. Kg Elektronische Schaltung und Verfahren zur Herstellung einer solchen
DE102006013605A1 (de) 2006-03-22 2007-10-11 Polyic Gmbh & Co. Kg Verfahren zum Programmieren einer elektronischen Schaltung sowie elektronische Schaltung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1920162A1 (de) * 1969-04-21 1970-10-22 Siemens Ag Feldeffekttransistoranordnung,insbesondere fuer Speicherzwecke
DE2446088A1 (de) * 1974-09-26 1976-04-01 Siemens Ag Statisches speicherelement und verfahren zu seiner herstellung
DE2842631A1 (de) * 1978-09-29 1980-04-10 Siemens Ag Verstaerkerstufe, enthaltend einen ersten ig-fet
DE2912859A1 (de) * 1979-03-30 1980-10-09 Siemens Ag Ig-fet mit schwebendem speichergate und mit steuergate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010038257A1 (ja) * 2008-09-30 2010-04-08 株式会社アドバンテスト プログラマブルデバイス、およびデータ書込方法

Also Published As

Publication number Publication date
EP0108650A3 (de) 1986-02-12
EP0108650A2 (de) 1984-05-16

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